Renesas 71V65803S150BQG

Overview

71V65803S150BQG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces.

For engineers reviewing the 71V65803S150BQG datasheet, 71V65803S150BQG pinout, 71V65803S150BQG application, or 71V65803S150BQG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ) requirements, and industrial-grade thermal stability for telecom infrastructure designs.

Technical Context

The 71V65803S150BQG implements a fully synchronous, positive-edge-triggered interface with registered address, control, and data paths. Its internal burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing - both sequences wrap after four words.

ZBT™ operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable (OE asynchronous but typically tied low) and dual-cycle pipelined data delivery: address/control sampled at cycle n, data valid at n+2. Chip enable logic uses three inputs (CE1, CE2, CE2) with two-cycle tri-state delay upon deselect.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas datasheet revision Nov.12.21 (PKG100 configuration for 256K×36).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167BAXI and AS7C3256A-15TIN, the 71V65803S150BQG uniquely delivers zero-bus-turnaround burst efficiency in a drop-in industrial-TQFP package - enabling deterministic latency and simplified controller design for telecom and networking hardware.

Availability

71V65803S150BQG is available at Aetrix Electronics and suitable for high-speed network buffers, telecom line card caches, and FPGA-based protocol accelerators requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S150BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150BQG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-throughput packet-processing systems such as routers, switches, and baseband units.

FAQ

What is the memory organization and density of the 71V65803S150BQG?

The 71V65803S150BQG is configured as 256K × 36 bits, delivering 9,437,184 total bits (9.4 Mbit) of synchronous SRAM. This organization supports 36-bit wide data paths common in high-performance networking ASICs and FPGAs. The part shares pinout and timing with the 512K × 18 variant (71V65603), enabling flexible density selection within the same footprint.

Does the 71V65803S150BQG support burst read and write operations?

Yes, the 71V65803S150BQG supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst initiation occurs on ADV/LD = HIGH after initial address load, and each burst word appears two clocks after its corresponding address/control sampling. The ZBT™ architecture ensures no dead cycles between successive burst reads or writes.

What package type and pin count does the 71V65803S150BQG use?

The 71V65803S150BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14 mm × 20 mm body size and 0.5 mm lead pitch. This package is explicitly documented for the 256K × 36 configuration in Renesas' datasheet revision Nov.12.21 and supports industrial temperature operation without derating.

How does the ZBTTM feature improve system performance in the 71V65803S150BQG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150BQG eliminates idle cycles when switching between read and write operations. By internally synchronizing output buffer enable and using pipelined registers, it allows back-to-back burst transfers - increasing effective bus utilization to near 100% in sustained traffic scenarios like packet buffering and streaming media processing.

What are the power supply requirements for the 71V65803S150BQG?

The 71V65803S150BQG requires two independent 3.3 V supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. Both rails must be decoupled per Renesas' layout guidelines. The ZZ pin enables sleep mode, reducing active current significantly while retaining data - critical for power-constrained telecom applications.