Renesas 71V65803S150BQG8

Overview

71V65803S150BQG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces.

For engineers reviewing the 71V65803S150BQG8 datasheet, 71V65803S150BQG8 pinout, 71V65803S150BQG8 application, or 71V65803S150BQG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ) requirement, individual byte write (BW1–BW4) control, and synchronous OE elimination via internal output buffer enable.

Technical Context

The 71V65803S150BQG8 implements a fully synchronous, positive-edge-triggered interface with address/control/data registers clocked on CLK rising edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions by internally synchronizing output buffer enable and supporting burst counter advancement via ADV/LD.

It features three chip enables (CE1, CE2 low-active; CE2 high-active) for depth expansion, LBO-controlled linear/interleaved burst sequencing, and asynchronous ZZ sleep mode for power-down. All synchronous inputs require setup/hold timing relative to CLK; OE remains asynchronous but is typically tied low for simplified operation.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch, lead-free and RoHS-compliant (BQG suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18-167BZC and AS7C3256A-15JC, the 71V65803S150BQG8 uniquely delivers 256K × 36-bit ZBT™ burst performance at 150 MHz in an industrial-qualified TQFP package-enabling deterministic latency and zero bus turnaround in high-throughput packet and video pipelines.

Availability

71V65803S150BQG8 is available at Aetrix Electronics and suitable for high-speed network buffers, telecom line card memory, FPGA-based protocol accelerators, and real-time video processing buffers requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V65803S150BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150BQG8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for zero-turnaround, high-bandwidth buffering in networking, telecommunications, and real-time digital signal processing systems.

FAQ

What is the memory organization of the 71V65803S150BQG8?

The 71V65803S150BQG8 is configured as 256K × 36-bit (9,437,184 bits total), supporting a 36-bit data bus width. It is part of the IDT71V65603/5803 family, which also includes a 512K × 18-bit variant. The 71V65803S150BQG8 uses the same pinout as the 512K × 18 version but maps to the 256K × 36 configuration per the device marking and datasheet specification.

Does the 71V65803S150BQG8 require external output enable (OE) control?

No - the 71V65803S150BQG8 features internally synchronized output buffer enable, eliminating the need for active OE timing control. While OE is present as an asynchronous input, it can be permanently tied low in most designs. The 71V65803S150BQG8 automatically manages output tri-state behavior based on internal burst and deselect timing.

What burst modes does the 71V65803S150BQG8 support, and how is burst order selected?

The 71V65803S150BQG8 supports both linear and interleaved 4-word burst sequences. Burst order is selected via the static LBO (Linear Burst Order) pin: LBO = LOW selects linear order; LBO = HIGH selects interleaved order. This selection is latched at power-up and must remain stable during operation.

What is the role of the three chip enable pins (CE1, CE2, CE2) on the 71V65803S150BQG8?

The 71V65803S150BQG8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-enable scheme allows flexible depth expansion and hierarchical memory decoding without external logic, and supports two-cycle deselect for clean bus release.

Is the 71V65803S150BQG8 compatible with industrial temperature environments?

Yes - the 71V65803S150BQG8 is rated for industrial temperature operation from –40°C to +85°C. This qualification ensures reliable performance in demanding environments such as telecom base stations, industrial automation controllers, and outdoor networking equipment where ambient thermal conditions exceed commercial grade limits.