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Renesas 71V65803S150BQI8
- Part No.:
- 71V65803S150BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65803S150BQI8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,081
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Product details
Overview
71V65803S150BQI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability. It supports interleaved or linear 4-word bursts, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking packet buffers and telecom line-card data path memory.
For engineers reviewing the 71V65803S150BQI8 datasheet, 71V65803S150BQI8 pinout, 71V65803S150BQI8 application, or 71V65803S150BQI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal stability for embedded infrastructure systems.
Technical Context
The 71V65803S150BQI8 implements a fully synchronous, positive-edge-triggered interface with registered address, control, and data paths. Its ZBT™ architecture eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal memory access - enabled via dedicated ADV/LD and LBO pins that control burst counter incrementing and sequence order (linear/interleaved).
It features three chip enables (CE1, CE2, CE2) with asymmetric polarity (CE2 active-high), asynchronous OE and ZZ inputs, and internally synchronized output buffer enable. The device uses dual power domains: VDD (3.3V ±5%) for core logic and VDDQ (3.3V ±5%) for I/O, supporting low-noise signal integrity in high-frequency data paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.44 Mbit); supports depth expansion via three chip enables |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained burst transfers |
| Clock-to-Data Access | 3.8 ns typical; defines minimum latency from CLK edge to valid Q output |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus overhead in sequential access patterns |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent regulation required |
| Operating Temperature | –40°C to +85°C industrial grade; validated for continuous operation in base station and router environments |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow profiles |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), the 71V65803S150BQI8 provides full 36-bit data I/O (I/O0–I/O31 + I/OP1–I/OP4), 18-bit address (A0–A17), and dedicated control signals including ADV/LD, LBO, R/W, CEN, OE, ZZ, and three chip enables (CE1, CE2, CE2) with mixed polarity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CE1, CE2, CE2 | Chip Enables | Three independent enables; CE1/CE2 active-low, CE2 active-high; any false condition initiates 2-cycle deselect |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines read vs. write two cycles later |
| ADV/LD | Burst Address Control | Loads new external address (LOW) or increments internal burst counter (HIGH); governs all burst sequencing |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence |
| BW1–BW4 | Byte Write Enables | Four active-low signals enabling independent 9-bit byte writes; all may be tied LOW for full-word writes |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input and output paths triggered on rising CLK edge |
| CLK | System Clock | Primary timing reference; all synchronous operations referenced to rising edge; OE and ZZ are asynchronous |
| ZZ | Sleep Mode Input | Asynchronous gate for internal clock; places device in lowest-power retention mode while preserving data |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between read/write transitions, enabling back-to-back burst transfers without bus contention |
| Internally Synchronized OE | Removes need for external OE timing control; outputs remain stable during clocked read cycles even if OE is static |
| 4-Word Pipelined Burst | Single address + ADV/LD HIGH delivers four consecutive data words with automatic address incrementing |
| Individual Byte Write Control | Four independent BWx pins allow selective 9-bit byte updates without disturbing other bytes in the 36-bit word |
| Three Chip Enables with Mixed Polarity | Enables flexible depth expansion using CE1/CE2 (active-low) and CE2 (active-high) for multi-SRAM bank decoding |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in network switches and routers before classification or forwarding. IC Role / Device Role / Timing Role: Primary data-path SRAM providing low-latency, burst-capable storage with deterministic 3.8 ns read access and zero-turnaround write-read switching. Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle time between successive frame writes and reads. | Use Scenario: Serving as frame buffer and lookup table memory in carrier-grade DSLAMs and optical transport equipment. IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfacing directly with FPGA-based traffic managers requiring 150 MHz synchronous burst I/O. Use Value: Guarantees reliable operation from –40°C to +85°C while supporting 4-word linear bursts for efficient ATM cell handling. |
| Base Station Baseband Processing | Industrial Real-Time Controller Cache |
Use Scenario: Temporary storage of processed IQ samples between DSP stages in 4G/5G radio units. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory subsystem synchronized to FPGA fabric clocks with precise 150 MHz timing margins. Use Value: Delivers consistent 3.8 ns clock-to-data timing across temperature, reducing timing closure risk in RF front-end designs. | Use Scenario: Holding real-time sensor fusion data and control instruction tables in programmable logic controllers (PLCs) and motion controllers. IC Role / Device Role / Timing Role: Deterministic-access SRAM used for critical control loop buffering where burst reads must complete within fixed microsecond windows. Use Value: Provides guaranteed industrial-temperature performance and sleep-mode (ZZ) power reduction during idle intervals without data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1372KV18 | 512K × 18-bit organization; same 150 MHz speed, but narrower data bus and different burst addressing logic | Requires wider address bus and software adaptation for 18-bit vs. 36-bit burst alignment | Preferred when system bandwidth demand fits 18-bit data path and board layout favors smaller BGA footprint |
| AS7C3256A-15JC | Commercial-grade (0°C to +70°C); no ZZ sleep mode; lacks ZBT™ architecture - introduces 1-cycle turnaround penalty | Not suitable for industrial ambient or power-constrained deployments requiring low-power retention | Select only for cost-sensitive, non-industrial applications where deterministic zero-turnaround is not required |
Compared with CY7C1372KV18 and AS7C3256A-15JC, the 71V65803S150BQI8 uniquely delivers 36-bit ZBT™ operation in industrial temperature with integrated burst counter and mixed-polarity chip enables - making it optimal for high-throughput, thermally demanding infrastructure memory subsystems.
Availability
71V65803S150BQI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, base station baseband processing, and industrial real-time controller cache applications requiring stable component supply and long-term industrial-grade availability.
Supply support for 71V65803S150BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.
The 71V65803S150BQI8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed networking and telecom infrastructure where deterministic burst throughput and industrial reliability are mandatory.
FAQ
What is the memory configuration and total capacity of the 71V65803S150BQI8?
The 71V65803S150BQI8 is configured as 256K × 36-bit, delivering 9,437,184 bits (9.44 Mbit) of synchronous SRAM. This organization supports 36-bit parallel data transfers and is optimized for systems requiring wide data paths and burst efficiency - such as packet buffering in network processors. The 71V65803S150BQI8 does not support 512K × 18-bit mode; that configuration applies to the pin-compatible 71V65603 variant.
How does the ZBTTM feature improve system performance in the 71V65803S150BQI8?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150BQI8 eliminates idle cycles between consecutive read and write operations by overlapping bus direction control with internal memory access. This allows back-to-back burst transfers without waiting for bus stabilization - reducing effective latency by up to one full clock cycle per transition. In practice, the 71V65803S150BQI8 sustains 150 MHz throughput in mixed-access scenarios where conventional SRAMs would stall.
What are the voltage and thermal specifications for reliable operation of the 71V65803S150BQI8?
The 71V65803S150BQI8 requires separate 3.3V ±5% supplies: VDD for core logic and VDDQ for I/O. It is rated for industrial temperature operation from –40°C to +85°C, with data retention guaranteed in sleep mode (ZZ = HIGH). Absolute maximum ratings prohibit exceeding VDD +0.5V on I/O pins and require strict adherence to setup/hold times relative to CLK. The 71V65803S150BQI8 meets these specs without derating across its full operating range.
Can the 71V65803S150BQI8 support both linear and interleaved burst sequences, and how is this selected?
Yes, the 71V65803S150BQI8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW (tied to VSS), the device executes linear bursts (A0, A1, A2, A3); when LBO = HIGH (tied to VDD), it performs interleaved bursts (A0, A2, A1, A3). LBO is a static input and must remain stable during burst operation. This selection is hardware-configured and does not require register programming - a key design simplification in the 71V65803S150BQI8.
What package type and pin count does the 71V65803S150BQI8 use, and are there alternate packages?
The 71V65803S150BQI8 uses a JEDEC-standard 100-pin TQFP (14 mm × 20 mm) package, designated PKG100. While the same die is offered in 119-ball BGA (BG119) and 165-fine-pitch BGA (BQ165) variants, the "BQI8" suffix explicitly denotes the TQFP-100 industrial-grade version. Pinouts differ significantly across packages - the 71V65803S150BQI8's TQFP layout places I/O, address, and control signals in defined zones optimized for controlled-impedance PCB routing in high-speed memory interfaces.
71V65803S150BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65803S150BQI8 FAQ
1.How can I place an order for 71V65803S150BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S150BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S150BQI8 reliable?
The price and inventory of 71V65803S150BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S150BQI8 is usually 5 days.
3.What payment methods are accepted for 71V65803S150BQI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S150BQI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65803S150BQI8?
71V65803S150BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S150BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S150BQI8?
For technical support, including 71V65803S150BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S150BQI8 requirements.
6.How does Aetrix verify that 71V65803S150BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V65803S150BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S150BQI8 meets industry standards.
7.What is the process for return or replacement of 71V65803S150BQI8?
All 71V65803S150BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S150BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S150BQI8 part is unused and in its original packaging.
Return procedure for 71V65803S150BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S150BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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