Renesas 71V65803S150PFG

Overview

71V65803S150PFG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It supports pipelined read/write operations in high-speed networking and packet buffering systems where bus efficiency and deterministic latency are critical.

For engineers reviewing the 71V65803S150PFG datasheet, 71V65803S150PFG pinout, 71V65803S150PFG application, or 71V65803S150PFG equivalent, key selection criteria include ZBT burst capability, 4-word interleaved/linear burst mode, individual byte write control (BW1–BW4), 100-pin TQFP package compatibility, and industrial temperature support (–40°C to +85°C).

Technical Context

The 71V65803S150PFG implements a fully synchronous, rising-edge-triggered interface with registered address, control, and data paths. Its internal burst counter advances on ADV/LD = HIGH and supports both linear and interleaved sequences selected by the static LBO pin.

ZBT operation eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with the next access cycle. Output enable (OE) is asynchronous but internally synchronized via pipelined output registers, removing external timing constraints on OE control.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (PKG100). Pinout validated per Renesas datasheet revision Nov.12.21, Figure 5 (256K × 36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C3256A-15JC, the 71V65803S150PFG delivers deterministic 3.8 ns read latency and true zero-turnaround operation essential for telecom and networking buffers, whereas alternatives trade either timing precision or architectural capability.

Availability

71V65803S150PFG is available at Aetrix Electronics and suitable for packet buffering, high-speed data acquisition, and industrial control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V65803S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150PFG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency buffering in communications infrastructure and real-time embedded systems.

FAQ

What is the maximum supported clock frequency for the 71V65803S150PFG?

The 71V65803S150PFG is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 3.8 ns clock-to-data access time remains fixed and deterministic under these conditions, making the 71V65803S150PFG suitable for timing-critical applications such as packet buffering and real-time data capture.

Does the 71V65803S150PFG support both linear and interleaved burst modes?

Yes, the 71V65803S150PFG supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW configures linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A1, A2+1, A3+1). This selection is static and must be held constant during operation. Both modes are fully supported in the 256K × 36 configuration and require no firmware changes - only hardware-level LBO biasing.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S150PFG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150PFG eliminates dead cycles by allowing immediate transition between read and write operations without bus idle time. When a read cycle completes, the next write can begin on the subsequent clock edge - no wait states or turnaround cycles are inserted. This is achieved through internal pipelining and dedicated burst counter logic that decouples address advancement from data transfer timing, ensuring continuous bus utilization in high-throughput applications like network switches.

What are the voltage requirements for VDD and VDDQ on the 71V65803S150PFG?

The 71V65803S150PFG requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. These rails may be supplied from separate regulators to minimize noise coupling. VIH thresholds differ: inputs reference VDD (VIH ≥ 2.0 V), while I/O pins reference VDDQ (VIH ≥ 2.0 V relative to VDDQ). Both supplies must reach nominal voltage before applying CLK, and VDDQ must never exceed VDD + 0.5 V per absolute maximum ratings.

Can the 71V65803S150PFG operate in power-saving mode, and how is it activated?

Yes, the 71V65803S150PFG supports low-power sleep mode activated by driving the ZZ pin HIGH. In this state, the internal clock is gated, dynamic power drops significantly, and standby current is minimized - while data retention is guaranteed across the full industrial temperature range. ZZ is asynchronous and does not require synchronization with CLK. To exit sleep mode, pull ZZ LOW and apply at least one valid CLK edge; outputs resume after standard tCD delay. No initialization sequence is required post-wake.