Renesas 71V65803S150PFG8

Overview

71V65803S150PFG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers, packet switching ASIC interfaces, and FPGA co-processor memory subsystems.

For engineers reviewing the 71V65803S150PFG8 datasheet, 71V65803S150PFG8 pinout, 71V65803S150PFG8 application, or 71V65803S150PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, industrial-grade thermal operation, and support for individual byte write control via BW1–BW4.

Technical Context

The 71V65803S150PFG8 implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising edge of CLK. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus turnaround without OE control dependency.

It integrates an on-chip burst counter controlled by ADV/LD and LBO inputs, supporting both linear and interleaved 4-word sequences. Internal synchronization of output enable removes need for external OE timing management, while three chip enables (CE1, CE2, CE2) allow flexible depth expansion and two-cycle deselect behavior.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant (PFG8 suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372KV18-167BZC and AS7C3256A-15JC, the 71V65803S150PFG8 delivers optimal balance of 36-bit wide bus, ZBT™ zero-turnaround operation, and industrial TQFP packaging-enabling drop-in integration into high-speed control and communications designs without BGA rework or async timing compromises.

Availability

71V65803S150PFG8 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based video processing systems, ASIC co-processor subsystems, and industrial real-time control modules requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150PFG8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in high-performance packet processing, baseband processing, and real-time embedded memory subsystems.

FAQ

What is the memory organization and density of the 71V65803S150PFG8?

The 71V65803S150PFG8 is configured as 256K × 36-bit, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. It also supports 512K × 18-bit operation via pin-strapping or system-level configuration. This dual-mode flexibility allows designers to optimize data bus width and address space based on system architecture requirements while maintaining identical timing and electrical characteristics for the 71V65803S150PFG8.

Does the 71V65803S150PFG8 require external output enable (OE) control?

No-the 71V65803S150PFG8 features internally synchronized output enable logic, eliminating the need for precise external OE timing. OE is asynchronous but can be tied low for continuous read operation; its state does not affect internal register timing. The 71V65803S150PFG8 automatically manages output tri-state alignment to the clock domain, simplifying interface design and removing setup/hold constraints associated with traditional OE-driven SRAMs.

How does the ZBTTM feature improve system performance in the 71V65803S150PFG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150PFG8 removes idle cycles between alternating read and write bursts. Unlike conventional synchronous SRAMs that require turnaround wait states, the 71V65803S150PFG8 allows immediate back-to-back access-e.g., a write burst can be followed directly by a read burst on the next clock edge. This sustains 100% bus utilization at 150 MHz, critical for packet buffering and real-time DSP applications where latency predictability is mandatory.

What package type and pin count does the 71V65803S150PFG8 use?

The 71V65803S150PFG8 uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) package, designated PFG8. It measures 14 mm × 20 mm with 0.5 mm lead pitch, features gull-wing leads, and is lead-free/RoHS compliant. This package provides mechanical robustness, thermal performance suitable for industrial ambient conditions, and compatibility with standard surface-mount assembly processes-making it ideal for volume manufacturing of networking and control hardware using the 71V65803S150PFG8.

Can the 71V65803S150PFG8 operate in low-power mode, and how is it controlled?

Yes-the 71V65803S150PFG8 supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock is gated and the device enters retention mode with drastically reduced current draw while preserving stored data. This mode is fully compatible with industrial temperature operation (–40°C to +85°C) and requires no additional sequencing-making it suitable for power-gated subsystems in the 71V65803S150PFG8-based designs without compromising data integrity.