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Renesas 71V65803S150PFGI

Part No.:
71V65803S150PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V65803S150PFGI.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,741

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Product details

Overview

71V65803S150PFGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling dead-cycle-free read/write transitions. It operates across industrial temperature (–40°C to +85°C) and is packaged in a 100-pin TQFP for high-speed networking and packet buffering applications.

For engineers reviewing the 71V65803S150PFGI datasheet, 71V65803S150PFGI pinout, 71V65803S150PFGI application, or 71V65803S150PFGI equivalent, this device delivers pipelined burst reads/writes, individual byte write control (BW1–BW4), three chip enables for depth expansion, and asynchronous sleep mode (ZZ) - all critical for low-latency memory subsystems in telecom infrastructure and FPGA-based accelerators.

Technical Context

The 71V65803S150PFGI implements a fully synchronous, positive-edge-triggered interface with registered address, data, and control inputs. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the static LBO pin, and ADV/LD determines whether external addresses are loaded or the counter is advanced.

ZBT operation eliminates bus turnaround latency: a write cycle immediately followed by a read (or vice versa) proceeds without idle cycles. Output enable (OE) is asynchronous but internally synchronized via pipelined output registers, removing timing-critical OE control in high-speed designs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 256K × 36-bit (9.4 Mbit); supports 512K × 18-bit via pin-compatible variant
Clock Frequency 150 MHz maximum; enables 6.67 ns cycle time for sustained burst throughput
Access Time 3.8 ns clock-to-data (tCD); guarantees deterministic read latency for real-time systems
Supply Voltage VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling
Operating Temperature –40°C to +85°C industrial grade; qualified for base station and industrial control environments
Burst Capability 4-word burst (linear/interleaved); reduces address bus traffic and improves bandwidth efficiency
Power-Down Mode Asynchronous ZZ input gates internal clock and reduces standby current to <100 µA

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas datasheet revision Nov. 12, 2021 (PKG100 configuration for 256K × 36).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLK Clock Input Positive-edge-triggered master clock; all synchronous timing referenced to this signal
R/W Read/Write Control Synchronous signal defining load-cycle direction; data transfer occurs two clocks later
ADV/LD Advance Burst / Load Address Controls burst counter increment (HIGH) or new address load (LOW); defines burst initiation
BW1–BW4 Byte Write Enables Four independent active-low signals enabling 9-bit byte writes; supports partial-word updates
CE1, CE2, CE2 Chip Enables Three synchronous enables (CE1/CE2 active LOW, CE2 active HIGH); enable depth expansion and selective deselection
OE Output Enable Asynchronous, active-low; tri-states outputs independently of clock; may be tied LOW for continuous read
ZZ Sleep Mode Asynchronous, active-HIGH; gates internal clock and reduces power consumption during idle periods
I/O0–I/O31, I/OP1–I/OP4 Data I/O Bus 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate hold-time violations
LBO Burst Order Select Static input selecting linear (LOW) or interleaved (HIGH) burst sequence; must remain stable during operation

Key Features

Feature Design Value
ZBTTM Architecture Eliminates dead cycles between consecutive reads and writes, enabling 100% bus utilization in burst-intensive protocols
Pipelined Outputs Internally synchronized output buffer enable removes need for precise OE timing control in high-speed PCB layouts
Single R/W Pin Reduces control bus complexity versus separate RD/WR signals; simplifies FPGA or ASIC interface logic
Individual Byte Write Enables efficient partial-word updates without masking logic or extra memory cycles - critical for packet header modification
Three Chip Enables Supports seamless depth expansion (e.g., 2× 256K×36 → 512K×36) without external decode logic
Asynchronous Sleep (ZZ) Allows dynamic power gating during idle intervals while preserving data integrity - essential for thermal-constrained systems

Applications

High-Speed Packet Buffering Network Processor Interface

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Primary data buffer with zero-turnaround burst capability to absorb back-to-back frame bursts without pipeline stalls.

Use Value: 3.8 ns tCD and 150 MHz clock support ≤6.67 ns cycle time, enabling full-duplex 10 Gbps packet buffering with sub-microsecond latency.

Use Scenario: Interfacing with multi-core network processors requiring low-latency, burst-capable shared memory for descriptor queues.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as descriptor cache with pipelined reads/writes aligned to processor clock domain.

Use Value: ADV/LD-controlled burst addressing and BW1–BW4 byte writes allow atomic descriptor updates without full-word overwrites.

FPGA-Based Accelerator Memory Industrial Real-Time Control

Use Scenario: Providing low-latency scratchpad memory for FPGA-accelerated video encoding pipelines with dynamic bitstream buffering.

IC Role / Device Role / Timing Role: High-bandwidth, deterministic-access memory mapped directly to FPGA fabric via parallel synchronous interface.

Use Value: 4-word burst mode reduces address bus toggling by 75% per data block, lowering EMI and routing congestion on dense FPGA carrier boards.

Use Scenario: Storing sensor fusion data and motion control command buffers in servo drives operating at –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing guaranteed data retention and timing compliance under thermal stress.

Use Value: Industrial temperature rating and ZZ sleep mode enable reliable operation in uncooled enclosures while minimizing standby power draw.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33-167AXC 256K × 36-bit, 167 MHz, 3.3V, but uses QDR-II architecture with separate read/write ports and no ZBT feature Requires dual-port controller logic; lacks zero-turnaround benefit for mixed read/write workloads Select when higher peak bandwidth is needed and system can accommodate QDR-II timing complexity
AS7C33256PFSI-15 256K × 36-bit, 150 MHz, 3.3V, standard sync SRAM with no ZBT or burst counter; asynchronous OE only No burst addressing or ADV/LD control; requires external address sequencing logic for multi-word transfers Select when cost sensitivity outweighs performance requirements and ZBT functionality is not required

Compared with CY7C1362BV33-167AXC and AS7C33256PFSI-15, the 71V65803S150PFGI uniquely delivers zero bus turnaround and integrated burst sequencing - reducing controller overhead and improving effective bandwidth in mixed-access memory subsystems without increasing pin count or layout complexity.

Availability

71V65803S150PFGI is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, and FPGA-based accelerator memory requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.

Supply support for 71V65803S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S150PFGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in telecom infrastructure, networking equipment, and real-time embedded systems.

FAQ

What is the memory organization and density of the 71V65803S150PFGI?

The 71V65803S150PFGI is organized as 256K × 36 bits, delivering 9,437,184 total bits (9.4 Mbit) of synchronous SRAM. This configuration supports 36-bit wide data paths ideal for 32-bit systems with parity or ECC overhead. The same die also supports a 512K × 18-bit variant (71V65603), but the 71V65803S150PFGI is fixed to the 256K × 36 configuration per its ordering code and pinout.

Does the 71V65803S150PFGI support true zero bus turnaround (ZBT)?

Yes, the 71V65803S150PFGI implements Renesas' licensed ZBTTM architecture, which eliminates dead cycles between consecutive read and write operations. When a write is immediately followed by a read (or vice versa), the device transitions without inserting idle cycles - confirmed by the functional truth table and timing diagrams in the official datasheet (Rev. Nov. 12, 2021).

What package type and pin count does the 71V65803S150PFGI use?

The 71V65803S150PFGI is supplied in a 100-pin plastic thin quad flatpack (TQFP), JEDEC standard PKG100, with 14 mm × 20 mm body size and 0.5 mm lead pitch. This matches the 256K × 36 pinout shown in Figure 5 of the datasheet, including dedicated I/O pins (I/O0–I/O31, I/OP1–I/OP4) and control signals (BW1–BW4, ADV/LD, LBO).

How does the burst addressing work on the 71V65803S150PFGI?

Burst addressing is controlled by the ADV/LD and LBO pins. When ADV/LD = HIGH, the internal 4-word burst counter increments; when ADV/LD = LOW, a new external address is loaded. LBO selects linear (LOW) or interleaved (HIGH) order. The 71V65803S150PFGI executes all four burst words synchronously, with data valid two clocks after each ADV/LD assertion - no external address generation logic required.

Is the 71V65803S150PFGI qualified for industrial temperature operation?

Yes, the 71V65803S150PFGI is rated for industrial temperature range (–40°C to +85°C), as specified in the "Recommended Operating Temperature and Supply Voltage" table (Table 5) and "Absolute Maximum Ratings" (Table 6) of the datasheet. This qualification applies to the PFGI suffix variant and is verified across voltage, timing, and functional parameters.

71V65803S150PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V65803S150PFGI FAQ

1.How can I place an order for 71V65803S150PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65803S150PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65803S150PFGI reliable?

The price and inventory of 71V65803S150PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S150PFGI is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S150PFGI transactions.

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71V65803S150PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65803S150PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65803S150PFGI?

For technical support, including 71V65803S150PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S150PFGI requirements.

6.How does Aetrix verify that 71V65803S150PFGI is sourced from the original manufacturer or authorized distributors?

All 71V65803S150PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S150PFGI meets industry standards.

7.What is the process for return or replacement of 71V65803S150PFGI?

All 71V65803S150PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S150PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65803S150PFGI part is unused and in its original packaging.

Return procedure for 71V65803S150PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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