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Renesas 71V65803S150PFGI8

Name: 71V65803S150PFGI8
Brand: Renesas
SKU: 71V65803S150PFGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65803S150PFGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V65803S150PFGI8.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V65803S150PFGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability - deployed in high-throughput network packet buffers, telecom line cards, and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65803S150PFGI8 datasheet, 71V65803S150PFGI8 pinout, 71V65803S150PFGI8 application, or 71V65803S150PFGI8 equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, industrial-grade temperature support (–40°C to +85°C), and direct alternatives for ZBT SRAM migration paths.

Technical Context

The 71V65803S150PFGI8 implements a fully synchronous, positive-edge-triggered interface with registered address/control/data paths, enabling deterministic two-cycle latency between address load and data transfer. Its ZBT™ architecture eliminates dead cycles during bus turnaround by overlapping write completion and read initiation within the same burst sequence.

It integrates a 4-word burst counter with linear/interleaved mode selection via LBO, individual byte write enables (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and asynchronous sleep mode (ZZ) for power gating - all operating under 3.3V ±5% core (VDD) and I/O (VDDQ) supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9,437,184 bits); supports 512K × 18-bit via pin-compatible variant
Max Clock Frequency	150 MHz - enables 3.8 ns clock-to-data access time for real-time pipeline alignment
ZBT™ Architecture	Zero Bus Turnaround: no idle cycles between consecutive read/write operations, maximizing bus utilization
Burst Capability	4-word interleaved or linear burst; initiated by ADV/LD and controlled by LBO pin state
Supply Voltage	VDD = 3.135 V to 3.465 V; VDDQ = 3.135 V to 3.465 V - strict 3.3V ±5% tolerance ensures signal integrity
Operating Temperature	–40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); lead-free, RoHS-compliant, green part

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with exposed thermal pad (PFGI suffix indicates industrial-grade, lead-free, green packaging).

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Input	18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLK	Clock Input	Positive-edge-triggered master clock; all synchronous timing referenced to this signal
R/W	Read/Write Control	Synchronous command: HIGH = read, LOW = write; determines data direction two cycles later
ADV/LD	Burst Address Control	LOW loads new external address; HIGH advances internal burst counter - defines burst sequencing
LBO	Burst Order Select	Static input: LOW = linear burst (0,1,2,3), HIGH = interleaved burst (0,2,1,3)
BW1–BW4	Byte Write Enables	Active-low synchronous enables for four 9-bit bytes; allows partial-word writes without masking logic
CE1, CE2, CE2	Chip Enables	Three-input enable scheme: CE1=LOW, CE2=LOW, CE2=HIGH selects device; any violation deselects in two cycles
OE	Output Enable	Asynchronous active-low control; can be tied LOW permanently - eliminates need for timing-critical OE management
ZZ	Sleep Mode	Asynchronous HIGH disables internal clock and reduces power; retains data in low-power state
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered inputs/outputs eliminate external latch requirements

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates dead cycles between read/write transitions - increases effective memory bandwidth by up to 30% in burst-intensive systems
Internally synchronized OE	Removes requirement for precise OE timing control; outputs remain valid across clock cycles without external gating
Single R/W pin	Reduces control signal count vs. separate RD/WR lines - simplifies FPGA or ASIC interface logic and PCB routing
4-word burst counter	Generates sequential addresses internally - cuts external address generation logic and saves controller resources
Individual byte write (BW1–BW4)	Enables granular 9-bit writes without full-word masking - critical for protocol header updates and metadata patching
Three chip enables	Supports seamless depth expansion (e.g., 2× 256K×36 → 512K×36) using standard logic without glue logic

Applications

Network Packet Buffer	FPGA Co-Processor Cache
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with line-rate throughput. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly to MAC controllers and traffic managers. Use Value: ZBT™ architecture sustains back-to-back reads/writes at 150 MHz, eliminating wait states during packet header rewrite and payload reassembly.	Use Scenario: Providing low-latency scratchpad memory for Xilinx or Intel FPGA-based digital signal processing pipelines. IC Role / Device Role / Timing Role: Synchronous SRAM acting as dual-port-accessible working memory for FFT, filtering, or encryption engines. Use Value: Pipelined outputs and 3.8 ns access enable tight loop timing closure; 36-bit width matches common DSP word sizes.
Telecom Line Card Buffer	Industrial Real-Time Controller Memory
Use Scenario: Buffering TDM voice channels and control signaling in carrier-grade base station interface modules. IC Role / Device Role / Timing Role: Deterministic-access memory supporting strict jitter budgets and sub-microsecond latency requirements. Use Value: Industrial temperature rating (–40°C to +85°C) and 150 MHz operation ensure reliability in uncooled chassis environments.	Use Scenario: Hosting configuration tables, motion profile data, and safety-critical status registers in PLC and CNC motion controllers. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM used for fast-access runtime data storage with guaranteed data retention in ZZ sleep mode. Use Value: Asynchronous ZZ pin enables instant power-down during idle periods while preserving memory contents - reducing system standby power.

Network Packet Buffer

FPGA Co-Processor Cache

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly to MAC controllers and traffic managers.

Use Value: ZBT™ architecture sustains back-to-back reads/writes at 150 MHz, eliminating wait states during packet header rewrite and payload reassembly.

Use Scenario: Providing low-latency scratchpad memory for Xilinx or Intel FPGA-based digital signal processing pipelines.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as dual-port-accessible working memory for FFT, filtering, or encryption engines.

Use Value: Pipelined outputs and 3.8 ns access enable tight loop timing closure; 36-bit width matches common DSP word sizes.

Telecom Line Card Buffer

Industrial Real-Time Controller Memory

Use Scenario: Buffering TDM voice channels and control signaling in carrier-grade base station interface modules.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting strict jitter budgets and sub-microsecond latency requirements.

Use Value: Industrial temperature rating (–40°C to +85°C) and 150 MHz operation ensure reliability in uncooled chassis environments.

Use Scenario: Hosting configuration tables, motion profile data, and safety-critical status registers in PLC and CNC motion controllers.

IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM used for fast-access runtime data storage with guaranteed data retention in ZZ sleep mode.

Use Value: Asynchronous ZZ pin enables instant power-down during idle periods while preserving memory contents - reducing system standby power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous ZBT SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
71V65603S150PFGI8	Same 256K×36 organization and 150 MHz speed, but commercial temperature range (0°C to +70°C)	Not rated for industrial ambient extremes; unsuitable for outdoor telecom or factory-floor deployments	Select only for cost-sensitive, temperature-controlled environments where industrial qualification is unnecessary
AS7C3256A-15JC	256K×16-bit, 15 ns access, asynchronous interface - lacks ZBT™, burst, and pipelining	Requires external address sequencing and OE timing control; lower bandwidth, higher latency per transaction	Use only when legacy design constraints prevent synchronous interface adoption or when burst capability is not required

Compared with 71V65803S150PFGI8, the 71V65603S150PFGI8 offers identical performance in milder environments, while the AS7C3256A-15JC trades ZBT efficiency for simpler timing - making the former ideal for industrial upgrades and the latter for legacy retrofit scenarios.

Availability

71V65803S150PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor acceleration, and industrial real-time controller memory requiring stable component supply, long-term lifecycle assurance, and industrial-temperature compliance.

Supply support for 71V65803S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150PFGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed communications and real-time embedded systems.

FAQ

What is the memory organization and density of the 71V65803S150PFGI8?

The 71V65803S150PFGI8 is organized as 256K × 36 bits, delivering 9,437,184 total bits (9 Mbit) of synchronous SRAM. This configuration supports 36-bit data paths natively and is pin-compatible with the 512K × 18-bit variant (71V65603) via shared package footprint and timing architecture.

Does the 71V65803S150PFGI8 support burst read and write operations?

Yes, the 71V65803S150PFGI8 supports 4-word synchronous burst operations in both linear and interleaved sequences. Burst mode is controlled by the ADV/LD and LBO pins: ADV/LD = HIGH advances the internal counter, and LBO selects order - enabling efficient sequential access without external address generation.

What package type and pin count does the 71V65803S150PFGI8 use?

The 71V65803S150PFGI8 uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm. The "PFGI" suffix denotes industrial-grade temperature range (–40°C to +85°C), lead-free construction, and green material compliance.

How does the ZBTTM feature improve system performance in the 71V65803S150PFGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150PFGI8 eliminates idle cycles between successive read and write operations. By allowing immediate bus direction reversal, it achieves continuous data flow - increasing effective bandwidth by up to 30% compared to conventional synchronous SRAMs in burst-intensive applications like packet buffering.

Can the 71V65803S150PFGI8 operate with independent core and I/O voltages?

Yes, the 71V65803S150PFGI8 features separate VDD (core) and VDDQ (I/O) supplies, both specified at 3.3V ±5%. This separation isolates switching noise on the I/O bus from the core logic, improving signal integrity and enabling compatibility with mixed-voltage system designs.

71V65803S150PFGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V65803S150PFGI8 FAQ

1.How can I place an order for 71V65803S150PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65803S150PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65803S150PFGI8 reliable?

The price and inventory of 71V65803S150PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S150PFGI8 is usually 5 days.

3.What payment methods are accepted for 71V65803S150PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S150PFGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65803S150PFGI8?

71V65803S150PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65803S150PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65803S150PFGI8?

For technical support, including 71V65803S150PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S150PFGI8 requirements.

6.How does Aetrix verify that 71V65803S150PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V65803S150PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S150PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V65803S150PFGI8?

All 71V65803S150PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S150PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65803S150PFGI8 part is unused and in its original packaging.

Return procedure for 71V65803S150PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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