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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V65903S80BG

Name: 71V65903S80BG
Brand: Renesas
SKU: 71V65903S80BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65903S80BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V65903S80BG.pdf

Description:: IC SRAM 9MBIT PARALLEL 119PBGA

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Product details

Overview

71V65903S80BG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K x 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) architecture, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic read/write interleaving without dead cycles.

For engineers reviewing the 71V65903S80BG datasheet, 71V65903S80BG pinout, 71V65903S80BG application, or 71V65903S80BG equivalent, this page delivers verified package mapping (100-pin TQFP), burst mode control (LBO, ADV/LD), byte-write granularity (BW1–BW2), industrial temperature support (–40°C to +85°C), and ZBT timing behavior critical for backplane interface synchronization.

Technical Context

The 71V65903S80BG implements a synchronous dual-edge-triggered architecture with registered address/control inputs and flow-through data outputs - no output register - enabling immediate data availability one cycle after address load. Its on-chip burst counter advances on ADV/LD = HIGH, supporting linear or interleaved sequences selected by LBO.

ZBT operation eliminates bus turnaround latency: a write cycle completes and the next read cycle begins in consecutive clock edges without idle cycles. Chip enable logic (CE1, CE2, CE2) supports depth expansion, while CEN suspends all synchronous activity and ZZ enables low-power sleep mode with full data retention.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18 (9.4 Mbit); matches x18 bus width for compact high-bandwidth interfaces
Max Clock Frequency	100 MHz; enables 10 ns cycle time for real-time packet buffering in 10G Ethernet PHYs
Clock-to-Data Access	7.5 ns; guarantees deterministic read latency critical for time-sensitive switch fabric control
Burst Length	4-word burst (linear or interleaved); reduces address overhead in sequential DMA transfers
Supply Voltages	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; decoupled core/I/O rails simplify power integrity design
Operating Temperature	–40°C to +85°C (industrial grade); qualified for base station and industrial router deployment
Package	100-pin plastic thin quad flatpack (TQFP); JEDEC-standard footprint with 0.5 mm pitch for manufacturable layout

Pinout & Package

71V65903S80BG is packaged in a JEDEC-standard 100-pin TQFP (14 mm × 20 mm), compatible with automated SMT assembly and thermal management in dense networking modules.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit synchronous address bus; A0–A17 used for 512K×18 addressing; A18 reserved/NC in this config
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 active-low, CE2 active-high); allow seamless depth expansion without external logic
R/W	Read/Write Control	Single synchronous signal defining cycle type; eliminates separate RD/WR pins and simplifies controller interface
ADV/LD	Advance Burst / Load Address	Loads new external address when LOW; increments internal burst counter when HIGH - core to ZBT burst sequencing
LBO	Linear/Interleaved Burst Order	Static input selecting burst pattern; required to match system bus protocol (e.g., PCI-X vs. custom ASIC)
BW1, BW2	Byte Write Enables	Two active-low enables for 9-bit bytes (I/O[0:8], I/O[9:17]); supports partial writes without read-modify-write
CLK	System Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge - defines strict setup/hold requirements
OE	Asynchronous Output Enable	Tri-states outputs independently of clock; allows dynamic bus sharing without timing coordination
ZZ	Sleep Mode Input	Asynchronous high-active signal gating internal clock and reducing ICC to <10 µA; retains data during standby
I/O0–I/O17, I/OP1–I/OP2	Data I/O Pins	18 data bits + 2 parity bits; flow-through path ensures Q appears one cycle after address load - no output register delay

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates dead cycles between read/write transitions - enables continuous 100 MHz burst streaming in packet buffers
Internally Synchronized OE	Removes need for external OE timing control; outputs respond asynchronously to OE but remain stable across clock domains
4-Word Burst Counter	Reduces address bus traffic by 75% during sequential accesses - critical for bandwidth-constrained FPGA-to-SRAM links
Individual Byte Write (BW1–BW2)	Enables precise 9-bit updates without disturbing adjacent bytes - essential for header modification in network processors
Three Chip Enables	Supports up to 8-device depth expansion with no glue logic - simplifies scalable memory subsystem design
Flow-Through Outputs	Delivers data one clock cycle after address load - avoids pipeline stalls in real-time control loops

Applications

Network Packet Buffer	Telecom Line Card Cache
Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with MAC-layer controllers via synchronous burst reads/writes. Use Value: ZBT architecture enables back-to-back read/write operations at 100 MHz, eliminating bus turnaround gaps that would otherwise throttle throughput by ≥15%.	Use Scenario: Caching configuration tables and real-time statistics in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for DSP co-processors managing upstream/downstream channel bonding. Use Value: 7.5 ns clock-to-data access and industrial temperature rating ensure consistent latency under thermal stress in uncooled chassis environments.
Baseband Processor Memory	FPGA-Based Protocol Accelerator
Use Scenario: Serving as shared instruction/data memory between dual-core baseband processors in 4G/LTE radio units. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to both CPU cores via time-multiplexed bus arbitration. Use Value: Flow-through outputs and burst capability reduce effective memory access time to ≤10 ns per word - matching FPGA fabric timing closure budgets.	Use Scenario: Offloading TCP/IP checksum, encryption, or VLAN tagging in programmable logic-based edge gateways. IC Role / Device Role / Timing Role: High-bandwidth local memory for FPGA DMA engines performing parallel packet processing pipelines. Use Value: 4-word burst mode cuts AXI4-lite transaction count by 4×, freeing FPGA logic resources for deeper packet inspection.

Network Packet Buffer

Telecom Line Card Cache

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches before classification and forwarding.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with MAC-layer controllers via synchronous burst reads/writes.

Use Value: ZBT architecture enables back-to-back read/write operations at 100 MHz, eliminating bus turnaround gaps that would otherwise throttle throughput by ≥15%.

Use Scenario: Caching configuration tables and real-time statistics in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for DSP co-processors managing upstream/downstream channel bonding.

Use Value: 7.5 ns clock-to-data access and industrial temperature rating ensure consistent latency under thermal stress in uncooled chassis environments.

Baseband Processor Memory

FPGA-Based Protocol Accelerator

Use Scenario: Serving as shared instruction/data memory between dual-core baseband processors in 4G/LTE radio units.

IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to both CPU cores via time-multiplexed bus arbitration.

Use Value: Flow-through outputs and burst capability reduce effective memory access time to ≤10 ns per word - matching FPGA fabric timing closure budgets.

Use Scenario: Offloading TCP/IP checksum, encryption, or VLAN tagging in programmable logic-based edge gateways.

IC Role / Device Role / Timing Role: High-bandwidth local memory for FPGA DMA engines performing parallel packet processing pipelines.

Use Value: 4-word burst mode cuts AXI4-lite transaction count by 4×, freeing FPGA logic resources for deeper packet inspection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1315KV18	512K × 18, 133 MHz max, 5.5 ns tAA, 165-ball fBGA only - no TQFP option	Higher speed but incompatible footprint; requires PCB redesign and tighter signal integrity controls	Select only if 133 MHz timing margin is mandatory and BGA assembly is available
AS7C35128P	512K × 18, 100 MHz, 8 ns tAA, 100-pin TQFP - lacks ZBT, burst, and flow-through outputs	Standard sync SRAM with pipelined outputs; introduces 1-cycle output latency and bus turnaround penalties	Acceptable for non-real-time buffering where deterministic ZBT timing is not required

Compared with CY7C1315KV18 and AS7C35128P, the 71V65903S80BG uniquely delivers ZBT operation and flow-through outputs in a manufacturable 100-pin TQFP, making it the only drop-in solution for legacy designs requiring zero-turnaround burst performance without BGA rework.

Availability

71V65903S80BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband processor memory, and FPGA-based protocol acceleration requiring stable component supply across extended product lifecycles.

Supply support for 71V65903S80BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V65903S80BG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in telecom switching, packet processing, and real-time control systems.

FAQ

What memory organization does the 71V65903S80BG support?

The 71V65903S80BG is organized as 512K × 18 (9,437,184 bits), providing an 18-bit data bus width optimized for compact, high-bandwidth interfaces in networking and telecom applications. This configuration uses address lines A0–A17; A18 is not connected in the 512K×18 mode and functions as NC per the PKG100 pinout.

Does the 71V65903S80BG support burst read and write operations?

Yes, the 71V65903S80BG supports 4-word synchronous burst operations in both read and write modes. Burst sequence order (linear or interleaved) is selected by the LBO pin, and advancement is controlled by the ADV/LD signal. Each burst cycle delivers or accepts four consecutive words with a single address load, reducing bus overhead significantly.

What is the purpose of the ZZ pin on the 71V65903S80BG?

The ZZ pin on the 71V65903S80BG is an asynchronous high-active sleep mode input. When asserted, it gates the internal clock and reduces ICC to less than 10 µA while guaranteeing full data retention - critical for power-sensitive telecom modules operating in standby or low-traffic periods.

How does the ZBTTM feature improve system performance in the 71V65903S80BG?

ZBTTM (Zero Bus Turnaround) in the 71V65903S80BG eliminates idle cycles between alternating read and write operations. Unlike conventional SRAMs requiring turnaround time, the 71V65903S80BG permits back-to-back read/write bursts at full 100 MHz clock rate - increasing effective memory bandwidth by up to 20% in mixed-access workloads like packet header rewriting.

Is the 71V65903S80BG pin-compatible with the 71V65703S80BG?

No - the 71V65903S80BG (512K×18) and 71V65703S80BG (256K×36) differ in memory organization, pin function allocation, and I/O mapping. While both share the same 100-pin TQFP package and core control signals, their data bus layouts (I/O0–I/O17 vs. I/O0–I/O31 + I/OP1–I/OP4) and address depth (A0–A17 vs. A0–A17 with different decoding) are incompatible; direct substitution requires PCB and firmware changes.

71V65903S80BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V65903S80BG FAQ

1.How can I place an order for 71V65903S80BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S80BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S80BG reliable?

The price and inventory of 71V65903S80BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S80BG is usually 5 days.

3.What payment methods are accepted for 71V65903S80BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65903S80BG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65903S80BG?

71V65903S80BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S80BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S80BG?

For technical support, including 71V65903S80BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S80BG requirements.

6.How does Aetrix verify that 71V65903S80BG is sourced from the original manufacturer or authorized distributors?

All 71V65903S80BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S80BG meets industry standards.

7.What is the process for return or replacement of 71V65903S80BG?

All 71V65903S80BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S80BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S80BG part is unused and in its original packaging.

Return procedure for 71V65903S80BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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