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Renesas 71V65903S80BG8

Part No.:
71V65903S80BG8
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V65903S80BG8.pdf
Description:
IC SRAM 9MBIT PARALLEL 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,765

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Product details

Overview

71V65903S80BG8 from IDT (now Renesas Electronics) is a 3.3V synchronous ZBT™ SRAM organized as 512K x 18 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access. It features zero bus turnaround (ZBT), flow-through outputs, burst counter, and individual byte write control - deployed in high-speed networking packet buffers, telecom line cards, and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65903S80BG8 datasheet, 71V65903S80BG8 pinout, 71V65903S80BG8 application, or 71V65903S80BG8 equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, industrial temperature support (–40°C to +85°C), TQFP-100 package footprint, and burst-mode read/write sequencing with LBO-controlled linear/interleaved addressing.

Technical Context

The 71V65903S80BG8 implements a synchronous, clock-driven architecture where address/control inputs are registered on the rising CLK edge, and data transfers occur one cycle later. Its internal burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved sequences.

ZBT operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable and single R/W control. The device uses flow-through outputs (no output register), asynchronous OE and ZZ pins, and three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion without external logic.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 18 (9.4 Mbit); supports depth expansion via CE1/CE2/CE2
Clock Frequency 100 MHz max; enables 10 ns cycle time for high-throughput buffering
Access Time 7.5 ns clock-to-data; guarantees deterministic latency for real-time packet processing
Supply Voltage VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupling required per JEDEC TQFP layout
Operating Temperature –40°C to +85°C (industrial grade); validated for base station and industrial control environments
Burst Capability 4-word burst (linear or interleaved); reduces address bus toggling and controller overhead
Write Control Individual byte write (BW1–BW2 for 18-bit mode); enables partial-word updates without read-modify-write

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant. Pinout matches PKG100 configuration for 512K × 18 variant (documented in Rev. 6.42, Figure 6).

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit synchronous address bus; A0–A17 used for 512K × 18 addressing (A18 selects upper/lower half)
CE1, CE2, CE2 Chip Enables Three independent enables: CE1/CE2 active-low, CE2 active-high; any false deselects in one cycle
R/W Read/Write Control Single synchronous signal determining cycle type; sampled at rising CLK with ADV/LD low
ADV/LD Advance Burst / Load Address LOW loads new external address; HIGH increments internal burst counter; critical for burst sequencing
LBO Linear/Interleaved Burst Order Static input: LOW = linear (0,1,2,3), HIGH = interleaved (0,2,1,3); sets burst address mapping
BW1, BW2 Byte Write Enables Active-low enables for two 9-bit bytes (I/O[0:8], I/O[9:17]); BW3/BW4 unused in 18-bit mode
CLK System Clock Input Rising-edge-triggered master clock; all synchronous timing referenced to this edge
OE Asynchronous Output Enable Active-low; tri-states outputs immediately - no clock dependency; may be tied low in most designs
ZZ Sleep Mode Input Asynchronous HIGH gates internal clock and reduces power; retains data during standby
I/O0–I/O17, I/OP1–I/OP2 Data I/O Pins 18-bit bidirectional data bus + 2 parity bits; registered input path, flow-through output path

Key Features

Feature Design Value
ZBTTM Zero Bus Turnaround Eliminates idle cycles between read/write transitions - enables back-to-back memory accesses without pipeline stalls
Internally Synchronized OE Removes need for external OE timing control; output enable is fully managed by internal state machine
4-Word Burst Counter Reduces address bus activity by 75% per burst; supports both linear and interleaved sequences via LBO pin
Individual Byte Write (BW1–BW2) Allows selective 9-bit updates without disturbing adjacent bytes - essential for protocol header manipulation
Three Chip Enables (CE1/CE2/CE2) Enables seamless depth expansion across multiple devices using standard logic levels - no glue logic required
Flow-Through Outputs Delivers data one clock cycle after access initiation with no output register delay - minimizes read latency

Applications

Packet Buffering in Switch ASICs FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switching fabric.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly with switch fabric clock domain.

Use Value: ZBT architecture enables uninterrupted read/write interleaving during burst packet forwarding, sustaining 100 MHz throughput without dead cycles.

Use Scenario: Offloading memory-intensive tasks (e.g., FFT, filtering) from FPGA logic fabric.

IC Role / Device Role / Timing Role: External synchronous memory mapped to FPGA's AXI or native interface with precise clock-aligned access.

Use Value: 7.5 ns clock-to-data and flow-through outputs reduce FPGA pipeline stages needed for memory handshake, improving resource efficiency.

Telecom Line Card Buffers Industrial Real-Time Control Buffers

Use Scenario: Temporary storage of TDM frames and jitter buffers in E1/T1 and SONET/SDH line interface units.

IC Role / Device Role / Timing Role: Deterministic-access SRAM synchronized to line clock for jitter compensation and frame alignment.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V I/O compatibility ensure reliable operation in uncontrolled cabinet environments.

Use Scenario: Cyclic data logging and motion control command buffering in PLC and servo drive systems.

IC Role / Device Role / Timing Role: Local high-speed scratchpad memory for motion trajectory tables and sensor fusion buffers.

Use Value: Sleep mode (ZZ) and low-power standby current support energy-efficient operation during idle cycles without data loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1373KV18 512K × 18, 133 MHz, 5.5 ns access; QDR-II+ architecture with separate read/write ports Supports concurrent read/write; requires dual-port controller logic and higher power Choose when true simultaneous access is required; not drop-in due to different timing model and pinout
AS7C35128P 512K × 18, 100 MHz, 8 ns access; standard sync SRAM (no ZBT or burst counter) Lacks ZBT, burst, and byte-write features; simpler interface but higher software overhead Choose for cost-sensitive designs where burst/ZBT benefits are unnecessary and controller handles address sequencing

Compared with CY7C1373KV18 and AS7C35128P, the 71V65903S80BG8 uniquely delivers ZBT timing and integrated burst control in a pin-compatible 100-TQFP package - enabling legacy system upgrades without PCB redesign while preserving deterministic latency.

Availability

71V65903S80BG8 is available at Aetrix Electronics and suitable for packet buffering, FPGA co-processing, telecom line card design, and industrial real-time control requiring stable component supply across extended product lifecycles.

Supply support for 71V65903S80BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor leader specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V65903S80BG8 belongs to IDT's ZBT™ SRAM family, engineered specifically for zero-latency, high-throughput buffering in packet-switched networks and real-time embedded systems demanding deterministic memory access.

FAQ

What is the memory organization and density of the 71V65903S80BG8?

The 71V65903S80BG8 is organized as 512K × 18, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports efficient 18-bit data paths common in telecom and FPGA interfaces, and enables depth expansion using its three chip enable pins (CE1, CE2, CE2) without external decoding logic.

Does the 71V65903S80BG8 support burst mode, and how is it configured?

Yes, the 71V65903S80BG8 supports a 4-word burst mode controlled by the ADV/LD and LBO pins. When ADV/LD is HIGH, the internal burst counter advances; LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) addressing. Burst operation reduces address bus toggling and simplifies controller firmware for sequential access patterns.

What package type and pin count does the 71V65903S80BG8 use?

The 71V65903S80BG8 is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch. This PKG100 footprint is shared across the 71V65703/71V65903 family and supports industrial temperature operation (–40°C to +85°C) with RoHS-compliant lead finish.

How does the ZBTTM feature improve system performance in the 71V65903S80BG8?

ZBTTM (Zero Bus Turnaround) in the 71V65903S80BG8 eliminates idle cycles between consecutive read and write operations. By synchronizing output enable internally and supporting immediate bus direction reversal, it enables back-to-back memory transactions - critical for maximizing bandwidth in packet buffering and streaming applications.

Can the 71V65903S80BG8 operate in low-power mode, and how is it activated?

Yes, the 71V65903S80BG8 supports low-power sleep mode via the asynchronous ZZ pin. Driving ZZ HIGH gates the internal clock and reduces dynamic power consumption while guaranteeing data retention. This mode is ideal for intermittent operation in telecom line cards and industrial controllers where standby power must be minimized.

71V65903S80BG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V65903S80BG8 FAQ

1.How can I place an order for 71V65903S80BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S80BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S80BG8 reliable?

The price and inventory of 71V65903S80BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S80BG8 is usually 5 days.

3.What payment methods are accepted for 71V65903S80BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65903S80BG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65903S80BG8?

71V65903S80BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S80BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S80BG8?

For technical support, including 71V65903S80BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S80BG8 requirements.

6.How does Aetrix verify that 71V65903S80BG8 is sourced from the original manufacturer or authorized distributors?

All 71V65903S80BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S80BG8 meets industry standards.

7.What is the process for return or replacement of 71V65903S80BG8?

All 71V65903S80BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S80BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S80BG8 part is unused and in its original packaging.

Return procedure for 71V65903S80BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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