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Renesas 71V65903S80BGI

Part No.:
71V65903S80BGI
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V65903S80BGI.pdf
Description:
IC SRAM 9MBIT PARALLEL 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,391

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Product details

Overview

71V65903S80BGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 bits (9,437,184-bit capacity), delivering 100 MHz operation with 7.5 ns clock-to-data access time. It implements zero bus turnaround (ZBT) architecture to eliminate dead cycles between read/write transitions and supports interleaved or linear 4-word burst modes via LBO control - deployed in high-speed networking packet buffers and telecom baseband subsystems.

For engineers reviewing the 71V65903S80BGI datasheet, 71V65903S80BGI pinout, 71V65903S80BGI application, or 71V65903S80BGI equivalent, key selection criteria include its 3.3V core/I/O supply, industrial temperature range (–40°C to +85°C), flow-through output architecture, synchronous burst counter, and support for individual byte write enables (BW1–BW2) in x18 configuration.

Technical Context

The 71V65903S80BGI uses a synchronous CMOS architecture with registered address/control inputs and flow-through data outputs - no output register - enabling deterministic timing relative to CLK's rising edge. Its internal burst counter advances on ADV/LD = HIGH, while external address loading occurs on ADV/LD = LOW, with burst order selected statically by LBO.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion and one-cycle deselect with tri-state output after deactivation. Clock Enable (CEN) suspends all synchronous operations without affecting output state, and ZZ input places the device in low-power sleep mode with guaranteed data retention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 18 (9.4 Mbit); supports only x18 mode per package marking and pinout - not x36
Clock Frequency 100 MHz maximum; enables 10 ns cycle time for sustained burst transfers
Access Time 7.5 ns clock-to-data (tCD); defines minimum latency from CLK rise to valid Q output
Supply Voltages VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); independent rails enable noise isolation
Operating Temperature –40°C to +85°C (industrial grade); validated across full range for telecom infrastructure use
Burst Capability 4-word burst (interleaved or linear); reduces address bus traffic and improves throughput in sequential access
Write Control Individual byte write enables BW1–BW2 (x18 config); allows partial 18-bit word updates without read-modify-write

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (suffix 'G'), with industrial-grade thermal performance.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs Synchronous 19-bit address bus; A0–A18 fully utilized in 512K×18 mode (A18 required)
CE1, CE2, CE2 Chip Enables Three independent enables: CE1/CE2 active-low, CE2 active-high; any false disables new ops but completes pending transfers
R/W Read/Write Control Synchronous signal defining cycle type; sampled at CLK rise with ADV/LD to initiate load or burst
ADV/LD Advance Burst / Load Address LOW loads new external address; HIGH increments internal burst counter - critical for burst sequencing
LBO Linear/Interleaved Burst Order Static input: LOW = linear (0,1,2,3), HIGH = interleaved (0,2,1,3); must remain stable during operation
BW1, BW2 Byte Write Enables Active-low enables for lower/upper 9-bit bytes in x18 mode; BW3/BW4 are no-connect in this variant
I/O0–I/O15, I/OP1–I/OP2 Data I/O 18-bit bidirectional data bus: I/O[0:15] + I/OP[1:2]; flow-through outputs require OE control for tri-state
OE Output Enable Asynchronous active-low; disables outputs independently of clock - simplifies bus sharing
ZZ Sleep Mode Asynchronous active-high; gates internal CLK and reduces power; retains memory contents
CEN Clock Enable Synchronous active-low; blocks CLK propagation when HIGH, freezing registers and outputs

Key Features

Feature Design Value
ZBT™ Architecture Eliminates bus turnaround delay between consecutive reads/writes - enables back-to-back transactions without idle cycles
Flow-Through Outputs No output register; data appears on I/O pins after fixed tCD delay - simplifies timing closure vs. registered-output SRAMs
Internal Burst Counter Generates 4-word burst addresses autonomously after initial load - offloads address generation from controller
Independent I/O Supply (VDDQ) Separate 3.3V rail for I/O circuitry isolates switching noise from core logic - improves signal integrity
Industrial Temperature Support Validated operation from –40°C to +85°C - suitable for uncooled base station and industrial control environments

Applications

High-Speed Packet Buffering Baseband Signal Processing

Use Scenario: Storing and forwarding Ethernet/SONET frames in line cards with strict latency budgets.

IC Role / Device Role / Timing Role: Synchronous buffer between MAC and PHY layers; accepts burst writes from ingress and delivers burst reads to egress under precise CLK-synchronized timing.

Use Value: 7.5 ns tCD and ZBT architecture ensure sub-10 ns read-after-write turnaround - critical for cut-through switching.

Use Scenario: Temporary storage of FFT/IFFT coefficients and channel estimation data in LTE/5G radio units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced to DSP or FPGA fabric; burst mode aligns with vectorized processing pipelines.

Use Value: 4-word burst capability reduces address bus overhead by 75% vs. discrete accesses - increases effective bandwidth to 1.8 Gbps.

Telecom Control Plane Memory Industrial Real-Time PLC Buffer

Use Scenario: Holding routing tables and session state in carrier-grade routers requiring deterministic response.

IC Role / Device Role / Timing Role: Dual-port-like behavior via ZBT and burst - supports concurrent read/write initiation without arbitration logic.

Use Value: CE1/CE2/CE2 enables seamless depth expansion across multiple 71V65903S80BGI devices - scales capacity without redesign.

Use Scenario: Cyclic I/O image buffering in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing reliable, fast-access memory for scan-cycle data exchange with fieldbus interfaces.

Use Value: –40°C to +85°C rating and ZZ sleep mode support extended uptime and low-power standby in uncontrolled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1355BV18-100AXC 100 MHz, 512K×18, but uses QDR-II architecture with separate read/write clocks and no ZBT - requires dual-clock domain design Targeted at high-bandwidth streaming (e.g., video frame buffers), not low-latency transactional buffering Select only if system already uses QDR-II interface and requires higher peak bandwidth over ZBT's latency advantage
AS7C35128PFSIG 100 MHz, 512K×18, standard sync SRAM (no ZBT, no burst counter); flow-through outputs but requires explicit OE management per cycle Suitable for simpler controllers lacking burst logic; lacks ADV/LD and LBO controls - no hardware burst acceleration Choose when ZBT complexity is unnecessary and cost sensitivity outweighs latency optimization needs

Compared with CY7C1355BV18-100AXC and AS7C35128PFSIG, the 71V65903S80BGI uniquely delivers zero-bus-turnaround latency and integrated burst addressing - reducing controller overhead and improving determinism in real-time packet and signal processing systems.

Availability

71V65903S80BGI is available at Aetrix Electronics and suitable for high-speed packet buffering, baseband signal processing, telecom control plane memory, and industrial real-time PLC buffer applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for 71V65903S80BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65903S80BGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for low-latency, high-throughput data buffering in networking, telecom, and real-time embedded systems where deterministic timing is critical.

FAQ

What memory organization does the 71V65903S80BGI support?

The 71V65903S80BGI is strictly configured as 512K × 18 (9.4 Mbit), as confirmed by its pinout (A0–A18 used, BW3/BW4 NC), functional block diagram for 512K×18, and datasheet labeling. It does not operate in 256K×36 mode - that configuration applies only to the 71V65703 variant.

Does the 71V65903S80BGI support burst read and write operations?

Yes, the 71V65903S80BGI supports 4-word synchronous burst operations for both reads and writes. Burst sequencing is controlled by ADV/LD and LBO, with linear or interleaved order selectable. Burst cycles execute automatically after initial address load - no external address incrementing required.

What is the role of the ZZ pin on the 71V65903S80BGI?

The ZZ pin on the 71V65903S80BGI is an asynchronous active-high sleep mode input. When asserted, it internally gates the clock and reduces power consumption to minimum while guaranteeing data retention - essential for power-sensitive telecom and industrial applications.

How does the 71V65903S80BGI implement zero bus turnaround (ZBT)?

The 71V65903S80BGI achieves ZBT by eliminating idle cycles between consecutive read and write operations. Its architecture allows immediate initiation of a new access (read or write) on the next clock edge after the previous data transfer completes - verified in timing diagrams and truth tables for mixed-load/burst cycles.

Is the 71V65903S80BGI compatible with commercial-temperature-only designs?

No - the 'BGI' suffix explicitly denotes industrial temperature grade (–40°C to +85°C). It is not rated for commercial-only operation; its characterization, screening, and qualification are performed across the full industrial range, making it unsuitable for cost-optimized commercial applications where extended temperature is unnecessary.

71V65903S80BGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V65903S80BGI FAQ

1.How can I place an order for 71V65903S80BGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S80BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S80BGI reliable?

The price and inventory of 71V65903S80BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S80BGI is usually 5 days.

3.What payment methods are accepted for 71V65903S80BGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65903S80BGI transactions.

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4.How is shipping managed for 71V65903S80BGI?

71V65903S80BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S80BGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S80BGI?

For technical support, including 71V65903S80BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S80BGI requirements.

6.How does Aetrix verify that 71V65903S80BGI is sourced from the original manufacturer or authorized distributors?

All 71V65903S80BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S80BGI meets industry standards.

7.What is the process for return or replacement of 71V65903S80BGI?

All 71V65903S80BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S80BGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S80BGI part is unused and in its original packaging.

Return procedure for 71V65903S80BGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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