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Renesas 71V65903S80BGI8

Name: 71V65903S80BGI8
Brand: Renesas
SKU: 71V65903S80BGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65903S80BGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V65903S80BGI8.pdf

Description:: IC SRAM 9MBIT PARALLEL 119PBGA

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Product details

Overview

71V65903S80BGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 bits (9,437,184-bit capacity), supporting 100 MHz operation with 7.5 ns clock-to-data access time. It implements Zero Bus Turnaround (ZBT) to eliminate dead cycles between read/write transitions and features flow-through outputs, burst counter, and individual byte write control - deployed in high-speed networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71V65903S80BGI8 datasheet, 71V65903S80BGI8 pinout, 71V65903S80BGI8 application, or 71V65903S80BGI8 equivalent, key selection criteria include its 100 MHz synchronous timing, ZBT architecture for bus efficiency, industrial temperature range (–40°C to +85°C), TQFP-100 package, and support for interleaved/linear 4-word burst modes with LBO-controlled sequencing.

Technical Context

The 71V65903S80BGI8 uses a synchronous CMOS architecture with registered address/control inputs triggered on the rising edge of CLK, and a flow-through output path (no output register). Its internal burst counter advances on ADV/LD = HIGH, enabling four consecutive data transfers per address load - sequence order (linear or interleaved) determined by static LBO pin state.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion and one-cycle deselect with tri-state output after deactivation. Clock Enable (CEN) suspends all synchronous operations while preserving register states, and asynchronous ZZ input enables low-power sleep mode with guaranteed data retention.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18 bits (9.4 Mbit); supports x18 configuration only - defines I/O count (18 data + 2 parity pins) and address width (A0–A18).
Max Clock Frequency	100 MHz - enables 10 ns cycle time; real-world sustained throughput depends on burst mode and bus turnaround elimination.
Clock-to-Data Access	7.5 ns - measured from CLK rising edge to valid data at I/O pins; critical for tight timing closure in FPGA/ASIC interfaces.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - requires separate low-noise regulation; no power sequencing needed.
Operating Temperature	–40°C to +85°C (industrial grade) - validated for deployment in uncontrolled ambient environments like base station enclosures.
Burst Capability	4-word burst (interleaved or linear) - reduces address bus traffic by 75% per burst; LBO pin selects sequence type statically.
Byte Write Control	BW1–BW4 enable independent 9-bit byte writes - allows partial-word updates without read-modify-write overhead.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (suffix 'G' in part number). Pinout optimized for signal integrity: dedicated VDDQ/VSS pairs adjacent to I/O banks, distributed power/ground pins, and NC/DNU pins (e.g., Pins 38, 39, 42, 43) for routing flexibility.

Pin/Terminal	Circuit Role	Design Meaning
CLK	Clock Input	Synchronous timing reference; all register sampling occurs on rising edge - dictates maximum system frequency and setup/hold margins.
A0–A18	Address Inputs	19-bit address bus; A0–A18 fully decoded for 512K × 18 access - no external address multiplexing required.
I/O0–I/O15, I/OP1–I/OP2	Data I/O	18-bit bidirectional data path (16 data + 2 parity); flow-through output eliminates output register delay but requires OE control for tri-state.
R/W	Read/Write Control	Synchronous command signal; sampled with ADV/LD to determine burst cycle type - determines direction of current and subsequent burst transfers.
ADV/LD	Advance Burst / Load Address	Controls burst counter: LOW loads new external address; HIGH increments internal counter - enables seamless burst chaining.
LBO	Linear/Interleaved Burst Order	Static configuration pin; LOW = linear (0,1,2,3), HIGH = interleaved (0,2,1,3) - must be stable before burst initiation.
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 active-low, CE2 active-high); any false condition deselects device in one cycle with automatic bus release.
ZZ	Sleep Mode	Asynchronous entry to low-power state; gates internal clock and reduces ICC to <100 µA - retains data without external refresh.

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates bus turnaround dead cycles between reads and writes - enables back-to-back memory transactions at full clock rate without wait states.
Internally Synchronized OE	Output enable is the only asynchronous signal; all other controls are synchronous - simplifies timing analysis and eliminates metastability risks on OE assertion.
Single R/W Pin	Unifies read/write control into one pin - reduces PCB trace count and FPGA/ASIC pin utilization versus separate RD/WR signals.
Individual Byte Write (BW1–BW4)	Four active-low enables for 9-bit byte segments - permits granular memory updates (e.g., protocol header modification) without full-word overwrite.
Three Chip Enables	Supports depth expansion across multiple devices with independent select control - enables scalable memory subsystems up to multi-megabit capacity.

Applications

Packet Buffer Memory	Telecom Line Card Cache
Use Scenario: Storing ingress/egress Ethernet or SONET frames in network switches/routers before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with deterministic 7.5 ns access and zero-turnaround burst reads/writes. Use Value: Enables line-rate processing of 10 Gbps+ traffic by eliminating bus idle time between packet header and payload accesses.	Use Scenario: Caching control-plane data (e.g., routing tables, session state) in carrier-grade DSLAMs or OLTs. IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfaced to PowerPC or ARM-based control processors via synchronous bus. Use Value: Guarantees data integrity across –40°C to +85°C ambient while supporting burst-mode table lookups for sub-microsecond latency.
Baseband Processing Buffer	FPGA Co-Processor Memory
Use Scenario: Temporary storage of IQ samples between ADC/DAC and DSP cores in wireless infrastructure (LTE/5G RRUs). IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer with FPGA-managed burst addressing and byte-write granularity. Use Value: Matches FPGA interface timing with 100 MHz clock domain and supports partial-word updates for efficient sample packing/unpacking.	Use Scenario: Off-chip memory extension for Xilinx Kintex or Intel Stratix FPGAs implementing custom accelerators (e.g., encryption, video scaling). IC Role / Device Role / Timing Role: Low-jitter, flow-through SRAM synchronized to FPGA-generated clock with CEN for dynamic power gating. Use Value: Delivers predictable 7.5 ns access without output register skew - critical for timing-closure in high-speed FPGA memory controllers.

Packet Buffer Memory

Telecom Line Card Cache

Use Scenario: Storing ingress/egress Ethernet or SONET frames in network switches/routers before forwarding or classification.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with deterministic 7.5 ns access and zero-turnaround burst reads/writes.

Use Value: Enables line-rate processing of 10 Gbps+ traffic by eliminating bus idle time between packet header and payload accesses.

Use Scenario: Caching control-plane data (e.g., routing tables, session state) in carrier-grade DSLAMs or OLTs.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfaced to PowerPC or ARM-based control processors via synchronous bus.

Use Value: Guarantees data integrity across –40°C to +85°C ambient while supporting burst-mode table lookups for sub-microsecond latency.

Baseband Processing Buffer

FPGA Co-Processor Memory

Use Scenario: Temporary storage of IQ samples between ADC/DAC and DSP cores in wireless infrastructure (LTE/5G RRUs).

IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer with FPGA-managed burst addressing and byte-write granularity.

Use Value: Matches FPGA interface timing with 100 MHz clock domain and supports partial-word updates for efficient sample packing/unpacking.

Use Scenario: Off-chip memory extension for Xilinx Kintex or Intel Stratix FPGAs implementing custom accelerators (e.g., encryption, video scaling).

IC Role / Device Role / Timing Role: Low-jitter, flow-through SRAM synchronized to FPGA-generated clock with CEN for dynamic power gating.

Use Value: Delivers predictable 7.5 ns access without output register skew - critical for timing-closure in high-speed FPGA memory controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV25-100BGXI	100 MHz, 512K × 18, 3.3V, but uses pipelined (not flow-through) outputs - adds 1-cycle output latency.	Less suitable for zero-latency burst chaining; requires additional pipeline stage in controller logic.	Select when system can absorb 1-cycle output delay and prioritizes Cypress's long-term supply stability over ZBT timing advantage.
AS7C35128P-10BIN	100 MHz, 512K × 18, 3.3V, standard sync SRAM - lacks ZBT, burst counter, and ADV/LD control; uses conventional RD/WR pins.	Requires external logic for burst generation and suffers bus turnaround penalties - lower effective bandwidth.	Select when cost sensitivity outweighs performance needs and legacy controller design cannot support ZBT protocol.

Compared with CY7C1371BV25-100BGXI and AS7C35128P-10BIN, the 71V65903S80BGI8 delivers true zero-turnaround operation and integrated burst sequencing - reducing controller complexity and maximizing usable bandwidth in latency-critical telecom and networking systems.

Availability

71V65903S80BGI8 is available at Aetrix Electronics and suitable for packet buffer memory, telecom line card cache, baseband processing buffer, and FPGA co-processor memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V65903S80BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65903S80BGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for bandwidth-intensive applications where deterministic low-latency memory access and bus efficiency are critical - such as network processors, baseband units, and high-end test equipment.

FAQ

What does the 'S80BGI8' suffix indicate in 71V65903S80BGI8?

The 'S80BGI8' suffix denotes a 100 MHz speed grade (S80 = 8 ns access, corresponding to 100 MHz max frequency), industrial temperature range (–40°C to +85°C), green/RoHS-compliant packaging (G), and tape-and-reel delivery (I8). This matches the electrical and thermal specs confirmed in the datasheet's Recommended Operating Conditions table.

Does 71V65903S80BGI8 support both 256K × 36 and 512K × 18 configurations?

No - the 71V65903S80BGI8 is specifically the 512K × 18 variant. While the 71V65703/71V65903 family shares architecture, the 71V65903 part number is assigned exclusively to the 512K × 18 organization, as confirmed in the Functional Block Diagram - 512K x 18 and Pin Configuration - 512K x 18 sections of the datasheet.

How is burst sequence order controlled on 71V65903S80BGI8?

Burst sequence order (linear vs. interleaved) is controlled by the LBO pin: LBO = LOW selects linear order (0,1,2,3), LBO = HIGH selects interleaved order (0,2,1,3). The datasheet specifies LBO as a static input that must remain stable during burst operation - it is not sampled dynamically per cycle.

Can OE be tied permanently low on 71V65903S80BGI8?

Yes - OE is asynchronous and active-low; the datasheet explicitly states "In normal operation, OE can be tied low." This enables continuous read capability without external control, simplifying interface design when output tri-state is not required during writes or idle periods.

What is the function of the three chip enable pins (CE1, CE2, CE2) on 71V65903S80BGI8?

CE1 and CE2 are active-low enables; CE2 is active-high. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. This triple-enable scheme allows flexible depth expansion - e.g., using CE2 to enable one bank and CE1/CE2 to enable another - with one-cycle deselect and automatic bus release.

71V65903S80BGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V65903S80BGI8 FAQ

1.How can I place an order for 71V65903S80BGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S80BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S80BGI8 reliable?

The price and inventory of 71V65903S80BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S80BGI8 is usually 5 days.

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Once your 71V65903S80BGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S80BGI8?

For technical support, including 71V65903S80BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S80BGI8 requirements.

6.How does Aetrix verify that 71V65903S80BGI8 is sourced from the original manufacturer or authorized distributors?

All 71V65903S80BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S80BGI8 meets industry standards.

7.What is the process for return or replacement of 71V65903S80BGI8?

All 71V65903S80BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S80BGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S80BGI8 part is unused and in its original packaging.

Return procedure for 71V65903S80BGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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