Renesas 71V65903S80BQ

Overview

71V65903S80BQ from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access time. It implements zero bus turnaround (ZBT) architecture to eliminate dead cycles between read/write transitions, features flow-through outputs, burst counter, and individual byte write control - deployed in high-speed packet buffering and network switch fabric memory subsystems.

For engineers reviewing the 71V65903S80BQ datasheet, 71V65903S80BQ pinout, 71V65903S80BQ application, or 71V65903S80BQ equivalent, key selection criteria include its 100 MHz synchronous timing, ZBT burst capability (linear/interleaved), 3.3V core/I/O supply, industrial temperature range (–40°C to +85°C), and 165-pin fine-pitch BGA (BQ) package compatibility with depth expansion via three chip enables.

Technical Context

The 71V65903S80BQ uses a synchronous CMOS architecture with registered address/control inputs triggered on the rising edge of CLK, while data outputs are flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, enabling four-word bursts with LBO selecting linear or interleaved order.

ZBT operation is enforced by synchronized OE and R/W control, eliminating bus turnaround latency; internally synchronized output buffer enable removes external OE timing constraints. Power-down is managed asynchronously via ZZ input, guaranteeing data retention during sleep mode.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 165-ball fine-pitch BGA (fBGA), designated BQ165/BQG165 per datasheet - footprint optimized for high-density routing in telecom line cards and baseband modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-100BZXI and AS7C35128P-10BIN, the 71V65903S80BQ delivers optimal balance of ZBT efficiency, industrial temperature reliability, and straightforward synchronous interface - ideal for systems requiring burst-aligned, low-latency packet buffering without QDR complexity or async timing uncertainty.

Availability

71V65903S80BQ is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, baseband processor cache, and industrial protocol gateway applications requiring stable component supply and long-term lifecycle support.

Supply support for 71V65903S80BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65903S80BQ belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in telecom, networking, and real-time embedded systems.

FAQ

What is the memory organization and total capacity of the 71V65903S80BQ?

The 71V65903S80BQ is organized as 512K × 18, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports an 18-bit data bus with 19 address lines (A0–A18), making it suitable for systems requiring wide, high-speed data paths such as packet switching fabrics and telecom framer interfaces.

Does the 71V65903S80BQ support burst operations, and how is burst order controlled?

Yes, the 71V65903S80BQ supports 4-word burst operations using an internal counter advanced by the ADV/LD signal. Burst order is selected via the LBO pin: LOW configures linear addressing (A0, A1, A2, A3), HIGH selects interleaved order (A0, A2, A1, A3) - matching IEEE 1596 or custom protocol requirements without external logic.

What package type and pin count does the 71V65903S80BQ use?

The 71V65903S80BQ is packaged in a 165-ball fine-pitch BGA (fBGA), designated BQ165/BQG165 per IDT documentation. This JEDEC-standard package provides high I/O density and thermal performance for demanding telecom and networking applications.

How does the ZBTTM feature improve system-level performance in the 71V65903S80BQ?

ZBTTM (Zero Bus Turnaround) eliminates idle cycles between successive read and write operations - allowing immediate transition from write to read or read to write without bus contention or wait states. In the 71V65903S80BQ, this is achieved through synchronized R/W and OE control, increasing effective memory bandwidth by up to 30% in burst-heavy traffic scenarios.

What are the power supply requirements and industrial temperature support for the 71V65903S80BQ?

The 71V65903S80BQ requires two 3.3V supplies: VDD (core) and VDDQ (I/O), each regulated to ±5%. It is rated for industrial temperature operation from –40°C to +85°C, with data retention guaranteed in sleep mode (ZZ = HIGH), making it suitable for deployment in uncontrolled ambient environments like outdoor telecom cabinets.