Renesas 71V65903S80BQ8

Overview

71V65903S80BQ8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA co-processor interfaces requiring deterministic burst latency.

For engineers reviewing the 71V65903S80BQ8 datasheet, 71V65903S80BQ8 pinout, 71V65903S80BQ8 application, or 71V65903S80BQ8 equivalent, key selection criteria include its 100 MHz synchronous timing, interleaved/linear 4-word burst capability, individual byte write control (BW1–BW2), industrial temperature support (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package with 3.3V I/O and core supply.

Technical Context

The 71V65903S80BQ8 implements a synchronous dual-edge-triggered architecture with an on-chip burst counter and flow-through output path-no output register-enabling immediate data availability one cycle after address/control sampling. Its ADV/LD pin controls either external address loading (low) or internal burst counter increment (high), while LBO selects linear or interleaved burst order.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion, and asynchronous ZZ sleep mode reduces power by gating the internal clock while retaining data. Clock Enable (CEN) suspends all synchronous operations without affecting output state, and OE remains asynchronous for direct output tri-state control independent of clock timing.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C35128PFSIG, the 71V65903S80BQ8 uniquely delivers deterministic 7.5 ns read latency, zero bus turnaround, and flow-through outputs-making it optimal for hard real-time systems where jitter and cycle predictability outweigh raw bandwidth.

Availability

71V65903S80BQ8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor interfaces, telecom line card memory, and industrial real-time controller cache applications requiring stable component supply across extended product lifecycles.

Supply support for 71V65903S80BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65903S80BQ8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for low-latency, high-throughput data buffering in packet-switched and real-time control systems where deterministic timing and bus efficiency are critical.

FAQ

What is the memory organization and total capacity of the 71V65903S80BQ8?

The 71V65903S80BQ8 is organized as 512K × 18, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration uses 19 address lines (A0–A18) and provides an 18-bit data bus plus two parity bits (I/OP1–I/OP2), making it ideal for systems requiring balanced bandwidth and error detection in telecom and networking hardware.

Does the 71V65903S80BQ8 support both linear and interleaved burst modes?

Yes, the 71V65903S80BQ8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear burst (sequential address increment), and LBO = HIGH selects interleaved burst (bit-reversed address pattern). This flexibility allows optimization for streaming (linear) or cache-line-aligned (interleaved) access patterns without firmware changes.

How does the ZBT™ architecture in the 71V65903S80BQ8 eliminate bus turnaround delays?

The ZBT™ architecture in the 71V65903S80BQ8 removes dead cycles between read and write operations by overlapping bus direction control with data transfer. Unlike conventional SRAMs that require idle cycles to change bus direction, the 71V65903S80BQ8 transitions instantly-enabling back-to-back reads and writes at full 100 MHz throughput without arbitration or wait states.

What is the role of the ADV/LD pin in the 71V65903S80BQ8?

The ADV/LD pin in the 71V65903S80BQ8 serves a dual function: when sampled LOW at the rising CLK edge, it loads a new external address into the internal address register; when sampled HIGH, it advances the on-chip burst counter. This single-pin control simplifies timing-critical address sequencing and enables efficient 4-word burst operations with minimal control logic.

Can the 71V65903S80BQ8 operate in low-power mode without losing data?

Yes-the 71V65903S80BQ8 supports full data retention in asynchronous sleep mode activated by driving the ZZ pin HIGH. In this state, the internal clock is gated, dynamic power drops significantly, and all stored data remains intact. The device resumes normal operation immediately upon ZZ returning LOW-no initialization or refresh is needed.