Renesas 71V65903S80BQG8

Overview

71V65903S80BQG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs for high-speed memory subsystems in networking and telecom line cards.

For engineers reviewing the 71V65903S80BQG8 datasheet, 71V65903S80BQG8 pinout, 71V65903S80BQG8 application, or 71V65903S80BQG8 equivalent, key selection criteria include burst counter support (linear/interleaved), individual byte write control (BW1–BW2), 3.3V I/O supply (VDDQ), industrial temperature range (–40°C to +85°C), and JEDEC-standard 165-ball fine-pitch BGA (BQG) packaging.

Technical Context

The 71V65903S80BQG8 implements a synchronous, clock-driven architecture where address/control registration occurs on the rising CLK edge, and data transfer occurs one cycle later. Its internal burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved addressing sequences.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) enabling depth expansion, asynchronous OE and ZZ inputs for output control and sleep mode, and registered input path with flow-through output path-eliminating output register latency while requiring precise OE timing for read enable.

Key Specifications

Pinout & Package

71V65903S80BQG8 is packaged in a 165-ball fine-pitch ball grid array (BQG165), JEDEC MO-245 compliant, with 1.0 mm ball pitch and 13 mm × 15 mm body size. Pin functions are defined per the 512K × 18 configuration; unused pins (e.g., I/O[16:31], BW3–BW4, A17–A18 in x18 mode) are marked NC or DNU.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-100BZXI and AS7C35128P-10JIN, the 71V65903S80BQG8 uniquely delivers deterministic 7.5 ns read latency with zero bus turnaround and integrated burst sequencing-making it optimal for high-efficiency packet buffering where controller simplicity and timing predictability are critical.

Availability

71V65903S80BQG8 is available at Aetrix Electronics and suitable for telecom infrastructure, network test equipment, and industrial embedded systems requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65903S80BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65903S80BQG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed packet buffering, switch fabric interfaces, and real-time control plane memory where deterministic latency and burst efficiency are essential.

FAQ

What is the memory organization and total capacity of the 71V65903S80BQG8?

The 71V65903S80BQG8 is organized as 512K × 18, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM storage. It uses 19 address lines (A0–A18) and supports an 18-bit data bus with two parity bits (I/OP1–I/OP2), matching the 512K × 18 configuration specified in the official IDT documentation for this variant.

Does the 71V65903S80BQG8 support burst reads and writes, and how is burst order controlled?

Yes, the 71V65903S80BQG8 supports 4-word synchronous bursts. Burst order is selected via the LBO pin: LOW configures linear sequence (0,1,2,3), HIGH selects interleaved (0,2,1,3). The burst counter advances on ADV/LD = HIGH, and the initial address is loaded when ADV/LD = LOW-both operations synchronized to the rising CLK edge.

What package type and ball count does the 71V65903S80BQG8 use, and is it RoHS-compliant?

The 71V65903S80BQG8 uses a 165-ball fine-pitch BGA (BQG165) package, JEDEC MO-245 compliant, with 1.0 mm ball pitch and 13 mm × 15 mm body size. Per IDT ordering information, the "G" suffix denotes green (lead-free, RoHS-compliant) construction, and the "8" indicates tape-and-reel packaging.

How does the 71V65903S80BQG8 implement zero bus turnaround (ZBT™), and what is its practical benefit?

The 71V65903S80BQG8 achieves ZBT™ by eliminating dead cycles between consecutive read and write operations-allowing immediate transition from one to the other without bus idle time. This enables sustained 100 MT/s throughput in applications like packet buffering, where alternating read/write bursts are common and latency must be minimized.

Can the 71V65903S80BQG8 operate in industrial temperature conditions, and what are its supply voltage tolerances?

Yes, the 71V65903S80BQG8 is rated for industrial temperature operation from –40°C to +85°C. Its core supply (VDD) and I/O supply (VDDQ) both accept 3.3 V ±5% (3.135 V to 3.465 V), ensuring robust operation across voltage rail variations in demanding embedded environments.