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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V65903S80PFG

Name: 71V65903S80PFG
Brand: Renesas
SKU: 71V65903S80PFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65903S80PFG

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V65903S80PFG.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V65903S80PFG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K x 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and flow-through outputs. It serves as high-speed buffer/cache memory in network packet processors, telecom line cards, and FPGA-based data-path acceleration where burst reads/writes and deterministic latency are critical.

For engineers reviewing the 71V65903S80PFG datasheet, 71V65903S80PFG pinout, 71V65903S80PFG application, or 71V65903S80PFG equivalent, this page delivers verified timing parameters, TQFP-100 pin mapping, industrial temperature support (–40°C to +85°C), burst mode behavior (linear/interleaved), and byte-write control - all essential for DDR-adjacent memory subsystem design and PCB layout validation.

Technical Context

The 71V65903S80PFG implements a synchronous, clocked interface with registered address/control inputs and flow-through (unregistered) data outputs. Its internal burst counter advances on ADV/LD = HIGH, enabling four-word bursts without external sequencing logic.

ZBT operation eliminates dead cycles between read/write transitions via internally synchronized OE and dual-phase chip enable (CE1/CE2/CE2) logic. The device supports individual byte write (BW1–BW2 for x18 configuration) and asynchronous sleep mode (ZZ) for power management - all while maintaining full data retention during low-power states.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18 (9.4 Mbit); supports high-density buffering in space-constrained x18 data buses
Clock Frequency	100 MHz max; enables 10 ns cycle time for real-time packet buffering in 10G+ networking systems
Access Time	7.5 ns clock-to-data (tCD); guarantees deterministic output valid timing for synchronous capture by FPGA/ASIC logic
Burst Capability	4-word linear or interleaved burst; reduces address bus overhead and simplifies controller logic
Supply Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V I/O domains and avoids level-shifting complexity
Operating Temperature	–40°C to +85°C industrial grade; qualified for deployment in base station RF units and industrial edge gateways
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly and thermal management

Pinout & Package

71V65903S80PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant. Pinout matches the 512K × 18 configuration per datasheet drawing 5298 drw 02a.

Pin	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit synchronous address bus; A0–A18 fully utilized for 512K × 18 addressing (2¹⁹ = 524,288 words)
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 active-low, CE2 active-high); allow depth expansion and hierarchical memory decoding
R/W	Read/Write Control	Synchronous single-pin R/W signal; determines cycle type at load phase; eliminates separate RD/WR lines
ADV/LD	Advance Burst / Load Address	Controls burst counter (HIGH) or loads new external address (LOW); enables seamless burst chaining
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence; LBO = LOW → linear (0,1,2,3); LBO = HIGH → interleaved (0,2,1,3)
BW1, BW2	Byte Write Enables	Two active-low enables for 9-bit bytes (I/O[0:8], I/O[9:17]); supports partial writes without read-modify-write
CLK	System Clock Input	Single-ended CMOS clock; all synchronous operations referenced to rising edge; no external PLL required
OE	Asynchronous Output Enable	Asynchronous control of I/O tri-state; can be tied LOW permanently for simplified read-only use cases
ZZ	Sleep Mode Input	Asynchronous high-active sleep; gates internal clock and reduces ICC to <10 µA while retaining memory contents
I/O0–I/O17, I/OP1–I/OP2	Data I/O Terminals	18-bit bidirectional data bus + 2 parity bits; flow-through outputs eliminate output register delay for tight timing closure

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates idle cycles between consecutive read/write operations - critical for back-to-back packet buffering in switch fabric controllers
Internally Synchronized OE	Removes need for precise OE timing control; OE may be statically asserted, reducing FPGA pin count and timing constraints
4-Word Burst Counter	Reduces address bus activity by 75% per burst; lowers controller logic complexity and system-level EMI
Individual Byte Write (BW1/BW2)	Enables selective 9-bit updates without disturbing adjacent bytes - essential for protocol header modification in network processors
Asynchronous Sleep (ZZ)	Guarantees data retention at ultra-low standby current (<10 µA); supports dynamic power gating in energy-sensitive edge devices

Applications

Network Packet Buffering	FPGA-Based Data Acceleration
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as ingress/egress FIFO with burst-aligned read/write capability. Use Value: 7.5 ns tCD and ZBT architecture ensure sub-10 ns turnaround between frame header parsing and payload write, meeting 10 Gbps line-rate requirements.	Use Scenario: Offloading compute-intensive tasks (e.g., encryption, pattern matching) from CPU to FPGA with local memory scratchpad. IC Role / Device Role / Timing Role: Dedicated instruction/data cache SRAM interfaced directly to FPGA's embedded memory controller. Use Value: Flow-through outputs and 100 MHz clock enable deterministic timing closure on FPGA I/O banks without added pipeline stages.
Telecom Line Card Memory	Industrial Edge Gateway Buffering
Use Scenario: Real-time buffering of TDM voice channels and SONET/SDH overhead bytes in carrier-grade access equipment. IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free, deterministic access for time-critical channelized data streams. Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V tolerance ensure reliable operation in uncontrolled telco cabinets.	Use Scenario: Aggregating sensor telemetry from multiple field buses (Modbus, CAN FD) before cloud upload in factory automation gateways. IC Role / Device Role / Timing Role: Local buffer memory absorbing bursty sensor traffic while CPU handles protocol translation and security. Use Value: ZZ sleep mode reduces average power below 5 mW during idle periods - extending uptime in battery-backed deployments.

Network Packet Buffering

FPGA-Based Data Acceleration

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as ingress/egress FIFO with burst-aligned read/write capability.

Use Value: 7.5 ns tCD and ZBT architecture ensure sub-10 ns turnaround between frame header parsing and payload write, meeting 10 Gbps line-rate requirements.

Use Scenario: Offloading compute-intensive tasks (e.g., encryption, pattern matching) from CPU to FPGA with local memory scratchpad.

IC Role / Device Role / Timing Role: Dedicated instruction/data cache SRAM interfaced directly to FPGA's embedded memory controller.

Use Value: Flow-through outputs and 100 MHz clock enable deterministic timing closure on FPGA I/O banks without added pipeline stages.

Telecom Line Card Memory

Industrial Edge Gateway Buffering

Use Scenario: Real-time buffering of TDM voice channels and SONET/SDH overhead bytes in carrier-grade access equipment.

IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free, deterministic access for time-critical channelized data streams.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V tolerance ensure reliable operation in uncontrolled telco cabinets.

Use Scenario: Aggregating sensor telemetry from multiple field buses (Modbus, CAN FD) before cloud upload in factory automation gateways.

IC Role / Device Role / Timing Role: Local buffer memory absorbing bursty sensor traffic while CPU handles protocol translation and security.

Use Value: ZZ sleep mode reduces average power below 5 mW during idle periods - extending uptime in battery-backed deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-100AXC	512K × 18, 100 MHz, but uses QDR-II+ architecture with separate read/write ports and differential clocks	Requires matched differential clock routing and more complex controller logic; better suited for true dual-port use cases	Select only if dual-clock domain isolation or simultaneous read/write is required; not drop-in for ZBT timing models
AS7C35128PFSIG	512K × 18, 100 MHz, but lacks ZBT, burst counter, and flow-through outputs; uses conventional asynchronous OE and sequential addressing	Higher latency (12 ns tAA), no burst capability, and requires external address sequencing logic	Choose when cost sensitivity outweighs performance - acceptable for non-real-time buffering where controller overhead is acceptable

Compared with CY7C1371DV33-100AXC and AS7C35128PFSIG, the 71V65903S80PFG uniquely delivers zero-bus-turnaround latency, integrated burst sequencing, and flow-through outputs - making it optimal for latency-critical, controller-simple designs in telecom and networking infrastructure.

Availability

71V65903S80PFG is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based data acceleration, telecom line card memory, and industrial edge gateway buffering requiring stable component supply across extended product lifecycles.

Supply support for 71V65903S80PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65903S80PFG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in packet-switched networks and real-time embedded systems.

FAQ

What is the maximum operating frequency and access time of the 71V65903S80PFG?

The 71V65903S80PFG operates at up to 100 MHz with a guaranteed clock-to-data access time (tCD) of 7.5 ns. This specification applies across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, ensuring deterministic timing for high-speed synchronous interfaces in networking and telecom applications.

Does the 71V65903S80PFG support burst read and write operations?

Yes, the 71V65903S80PFG supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode is initiated by asserting ADV/LD = HIGH after initial address load, eliminating the need for external address counters and reducing controller complexity in FPGA or ASIC designs.

How does the ZBTTM (Zero Bus Turnaround) feature work in the 71V65903S80PFG?

ZBTTM in the 71V65903S80PFG eliminates idle cycles between consecutive read and write operations by internally synchronizing output enable and using three chip enables (CE1/CE2/CE2) to manage bus ownership. This allows immediate transition from read to write (or vice versa) without bus contention or wait states - critical for high-efficiency packet buffering.

What package and pin count does the 71V65903S80PFG use?

The 71V65903S80PFG is supplied in a 100-pin plastic thin quad flatpack (TQFP), JEDEC-standard footprint measuring 14 mm × 20 mm with 0.5 mm pitch. Its pinout is optimized for the 512K × 18 configuration, including dedicated BW1/BW2 byte write controls and dual-mode ADV/LD functionality.

Can the 71V65903S80PFG operate in low-power mode, and how is it enabled?

Yes, the 71V65903S80PFG supports low-power sleep mode activated by driving the ZZ pin HIGH. In this state, internal clock gating reduces ICC to under 10 µA while guaranteeing full data retention - ideal for intermittent operation in battery-powered or thermally constrained edge devices.

71V65903S80PFG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V65903S80PFG FAQ

1.How can I place an order for 71V65903S80PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S80PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S80PFG reliable?

The price and inventory of 71V65903S80PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S80PFG is usually 5 days.

3.What payment methods are accepted for 71V65903S80PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65903S80PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65903S80PFG?

71V65903S80PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S80PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S80PFG?

For technical support, including 71V65903S80PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S80PFG requirements.

6.How does Aetrix verify that 71V65903S80PFG is sourced from the original manufacturer or authorized distributors?

All 71V65903S80PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S80PFG meets industry standards.

7.What is the process for return or replacement of 71V65903S80PFG?

All 71V65903S80PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S80PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S80PFG part is unused and in its original packaging.

Return procedure for 71V65903S80PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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