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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V65903S80PFGI

Name: 71V65903S80PFGI
Brand: Renesas
SKU: 71V65903S80PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65903S80PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V65903S80PFGI.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V65903S80PFGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K x 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access. It features zero bus turnaround (ZBT), flow-through outputs, burst counter, and individual byte write control - deployed in high-speed networking packet buffers and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65903S80PFGI datasheet, 71V65903S80PFGI pinout, 71V65903S80PFGI application, or 71V65903S80PFGI equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O supply (VDDQ), industrial temperature range (–40°C to +85°C), TQFP-100 package compatibility, and burst mode configuration via LBO/ADV/LD.

Technical Context

The 71V65903S80PFGI implements a synchronous, clocked architecture where address/control signals are registered on the rising CLK edge, and data transfer occurs one cycle later. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the static LBO pin and ADV/LD signal.

ZBT operation eliminates dead cycles between read/write transitions via synchronized output buffer enable and three chip enables (CE1, CE2 active-low; CE2 active-high) enabling depth expansion. Flow-through outputs eliminate output registers, while asynchronous OE and ZZ pins provide independent output control and sleep-mode power gating.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18 (9.4 Mbit); supports high-bandwidth data paths in x18 mode for FPGA or ASIC glue logic.
Max Clock Frequency	100 MHz; enables 10 ns cycle time in synchronous systems requiring deterministic latency.
Clock-to-Data Access	7.5 ns; guarantees data valid within one clock cycle after address/control registration.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupling must separate core and I/O rails.
Operating Temperature	–40°C to +85°C (industrial grade); qualified for base station, industrial control, and avionics edge computing.
Burst Capability	4-word linear or interleaved burst; reduces address bus traffic and improves throughput in sequential access patterns.
Byte Write Control	BW1–BW2 (x18 config); enables selective 9-bit byte writes without masking logic or external gating.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT document 5298 drw 02a (PKG100, 512K×18 configuration).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs registering on rising CLK; A0–A18 used fully for 512K×18 addressing (19-bit address space).
CE1, CE2, CE2	Chip Enables	Three independent enables: CE1/CE2 active-low, CE2 active-high; any false enable halts new operations but completes pending transfers.
R/W	Read/Write Control	Synchronous signal determining cycle type; sampled at rising CLK with ADV/LD low to initiate load access.
ADV/LD	Advance Burst / Load Address	Controls burst counter increment (HIGH) or external address load (LOW); critical for burst sequence management.
LBO	Linear/Interleaved Burst Order	Static input selecting burst order; HIGH = interleaved, LOW = linear; must remain stable during operation.
BW1, BW2	Byte Write Enables	Active-low enables for two 9-bit bytes (I/O[0:8], I/O[9:17]); unused BW3/BW4 are no-connect in x18 mode.
CLK	System Clock Input	Primary timing reference; all synchronous inputs referenced to rising edge; CEN gates clock propagation when HIGH.
ZZ	Sleep Mode Input	Asynchronous HIGH activates internal clock gating; retains data while reducing dynamic power consumption.
I/O0–I/O17, I/OP1–I/OP2	Data I/O Pins	18-bit bidirectional data path plus two parity bits; flow-through outputs require external OE control only if tri-state needed mid-cycle.

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates bus turnaround dead cycles between reads and writes - enables back-to-back memory transactions without inter-cycle gaps.
Flow-Through Outputs	Output data path has no register; reduces output latency and simplifies timing closure versus pipelined SRAMs.
On-Chip Burst Counter	Generates 4-word burst addresses internally; reduces external address generation logic and bus bandwidth requirements.
Individual Byte Write	BW1/BW2 allow selective 9-bit writes in x18 mode - avoids full-word overwrites and reduces write energy per transaction.
Three Chip Enables	Supports seamless depth expansion across multiple devices without external decode logic or timing skew penalties.

Applications

High-Speed Packet Buffering	FPGA Co-Processor Memory
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification or forwarding decisions. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing deterministic 7.5 ns read latency and zero-turnaround write-read transitions for line-rate buffering. Use Value: Enables sustained 100 MHz throughput with no bus idle cycles - critical for maintaining wire-speed performance under bursty traffic loads.	Use Scenario: Offloading compute-intensive tasks (e.g., CRC, encryption) from host CPU using tightly coupled FPGA accelerators. IC Role / Device Role / Timing Role: Low-latency, wide-data memory interface between FPGA fabric and external processing subsystems. Use Value: 512K×18 organization matches common FPGA data widths; ZBT timing eliminates pipeline stalls during mixed read/write workloads.
Industrial PLC Data Logging	Avionics Sensor Fusion Buffer
Use Scenario: Capturing time-stamped analog/digital sensor readings in programmable logic controllers for deterministic control loops. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing real-time process data with guaranteed retention across –40°C to +85°C ambient. Use Value: ZZ sleep mode reduces standby power during idle intervals; byte-write capability minimizes flash wear in circular buffer implementations.	Use Scenario: Aggregating multi-source inertial, GPS, and environmental sensor data prior to Kalman filtering in flight control units. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM (via industrial temp grade) serving as low-jitter, deterministic latency buffer. Use Value: Flow-through outputs and 7.5 ns access ensure sub-microsecond timestamp alignment across sensor channels.

High-Speed Packet Buffering

FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification or forwarding decisions.

IC Role / Device Role / Timing Role: Primary burst-access SRAM providing deterministic 7.5 ns read latency and zero-turnaround write-read transitions for line-rate buffering.

Use Value: Enables sustained 100 MHz throughput with no bus idle cycles - critical for maintaining wire-speed performance under bursty traffic loads.

Use Scenario: Offloading compute-intensive tasks (e.g., CRC, encryption) from host CPU using tightly coupled FPGA accelerators.

IC Role / Device Role / Timing Role: Low-latency, wide-data memory interface between FPGA fabric and external processing subsystems.

Use Value: 512K×18 organization matches common FPGA data widths; ZBT timing eliminates pipeline stalls during mixed read/write workloads.

Industrial PLC Data Logging

Avionics Sensor Fusion Buffer

Use Scenario: Capturing time-stamped analog/digital sensor readings in programmable logic controllers for deterministic control loops.

IC Role / Device Role / Timing Role: Industrial-grade SRAM storing real-time process data with guaranteed retention across –40°C to +85°C ambient.

Use Value: ZZ sleep mode reduces standby power during idle intervals; byte-write capability minimizes flash wear in circular buffer implementations.

Use Scenario: Aggregating multi-source inertial, GPS, and environmental sensor data prior to Kalman filtering in flight control units.

IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM (via industrial temp grade) serving as low-jitter, deterministic latency buffer.

Use Value: Flow-through outputs and 7.5 ns access ensure sub-microsecond timestamp alignment across sensor channels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1315KV18-100BZXI	100 MHz, 512K×18 QDR SRAM with differential clocks and separate read/write ports; higher pin count (165-ball FBGA).	Requires dual-port arbitration logic; suited for true simultaneous read/write, not ZBT-style sequential bursts.	Select when true concurrent access is required; avoid if system uses single-clock, single-bus ZBT protocol.
AS7C35128P-10JCN	10 ns async SRAM (not synchronous); no burst, no ZBT, no clock enable; 32K×18 organization only.	Lacks timing determinism and burst efficiency; limited to low-frequency control-plane storage.	Use only in cost-sensitive, non-real-time applications where clock domain isolation is unnecessary.

Compared with CY7C1315KV18-100BZXI and AS7C35128P-10JCN, the 71V65903S80PFGI uniquely delivers ZBT timing with flow-through outputs in a compact TQFP-100 package - making it optimal for space-constrained, high-throughput embedded systems requiring deterministic burst access without QDR complexity or async latency penalties.

Availability

71V65903S80PFGI is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V65903S80PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V65903S80PFGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in network infrastructure and real-time embedded systems.

FAQ

What is the memory organization and total capacity of the 71V65903S80PFGI?

The 71V65903S80PFGI is organized as 512K × 18, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports 19-bit addressing (A0–A18) and is optimized for systems requiring wide, low-latency data paths - such as FPGA interfaces and packet buffer applications. The device does not support 256K × 36 mode; that variant is implemented in the 71V65703.

Does the 71V65903S80PFGI support burst mode, and how is it configured?

Yes, the 71V65903S80PFGI supports 4-word burst mode via its on-chip burst counter. Burst sequence type (linear or interleaved) is selected by the LBO pin: LOW selects linear, HIGH selects interleaved. The ADV/LD pin controls counter behavior - LOW loads a new external address, HIGH advances the counter. Burst operation requires R/W and ADV/LD to be asserted synchronously with CLK.

What are the voltage and temperature specifications for the 71V65903S80PFGI?

The 71V65903S80PFGI operates with VDD = 3.3 V ±5% (core) and VDDQ = 3.3 V ±5% (I/O). It is rated for the industrial temperature range of –40°C to +85°C, verified per IDT specification 5298. This makes the 71V65903S80PFGI suitable for deployment in base stations, factory automation controllers, and other harsh-environment applications.

How does the ZBTTM feature improve system performance in the 71V65903S80PFGI?

ZBTTM (Zero Bus Turnaround) eliminates idle cycles when switching between read and write operations. In the 71V65903S80PFGI, this is achieved through synchronized output buffer enable and precise control of CE/ADV/LD timing - allowing immediate back-to-back accesses. This increases effective memory bandwidth by up to 25% compared to conventional synchronous SRAMs in burst-intensive workloads.

What package type and pin count does the 71V65903S80PFGI use?

The 71V65903S80PFGI is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), with dimensions 14 mm × 20 mm and 0.5 mm lead pitch. Pinout follows the PKG100 configuration for the 512K × 18 variant (document 5298 drw 02a), including dedicated I/O0–I/O17, I/OP1–I/OP2, and three chip enables (CE1, CE2, CE2).

71V65903S80PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V65903S80PFGI FAQ

1.How can I place an order for 71V65903S80PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S80PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S80PFGI reliable?

The price and inventory of 71V65903S80PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S80PFGI is usually 5 days.

3.What payment methods are accepted for 71V65903S80PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65903S80PFGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65903S80PFGI?

71V65903S80PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S80PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S80PFGI?

For technical support, including 71V65903S80PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S80PFGI requirements.

6.How does Aetrix verify that 71V65903S80PFGI is sourced from the original manufacturer or authorized distributors?

All 71V65903S80PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S80PFGI meets industry standards.

7.What is the process for return or replacement of 71V65903S80PFGI?

All 71V65903S80PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S80PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S80PFGI part is unused and in its original packaging.

Return procedure for 71V65903S80PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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