Renesas 71V65903S85BG8

Overview

71V65903S85BG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 bits (9,437,184-bit capacity), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and flow-through outputs. It serves as high-speed buffer/scratchpad memory in network packet processors, telecom line cards, and FPGA co-processor interfaces requiring burst read/write without dead cycles.

For engineers reviewing the 71V65903S85BG8 datasheet, 71V65903S85BG8 pinout, 71V65903S85BG8 application, or 71V65903S85BG8 equivalent, key selection criteria include its 100 MHz burst capability, 4-word interleaved/linear burst mode, individual byte write control (BW1–BW2), industrial temperature support (–40°C to +85°C), and JEDEC-standard 119-ball BGA package (BGG119).

Technical Context

The 71V65903S85BG8 implements a synchronous, clock-driven interface with registered address/control inputs and flow-through data outputs-no output register-enabling deterministic timing. Its on-chip burst counter advances on ADV/LD = HIGH, with burst order selected by static LBO pin (LOW = linear, HIGH = interleaved).

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, asynchronous OE and ZZ pins for output control and sleep mode, and internal synchronization of output buffer enable-eliminating external OE timing constraints. Clock Enable (CEN) suspends all synchronous operations while preserving register state.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), 12 mm × 12 mm, 0.8 mm pitch, RoHS-compliant and green (lead-free). Pinout validated per IDT document 5298 drw 13b (512K × 18 BG119 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C35128P-10BIN, the 71V65903S85BG8 uniquely balances 100 MHz burst throughput, zero-bus-turnaround simplicity, and industrial temperature reliability in a compact BGA - making it optimal for cost-sensitive, latency-critical embedded buffering.

Availability

71V65903S85BG8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V65903S85BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65903S85BG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for low-latency, high-throughput buffering in packet-switched networks and real-time embedded systems where bus turnaround overhead must be eliminated.

FAQ

What is the memory organization of the 71V65903S85BG8?

The 71V65903S85BG8 is organized as 512K × 18 bits (9,437,184 total bits), supporting only the x18 configuration. This uses address lines A0–A18 (19 bits) and provides an 18-bit data bus (I/O0–I/O17) plus two parity bits (I/OP1–I/OP2). It does not support the 256K × 36 configuration - that is exclusive to the 71V65703 variant.

Does the 71V65903S85BG8 support burst mode, and how is it configured?

Yes, the 71V65903S85BG8 supports 4-word burst mode via its on-chip burst counter. Burst is initiated by sampling ADV/LD = HIGH after a load cycle; burst order (linear or interleaved) is selected by the static LBO pin (LOW = linear, HIGH = interleaved). The 71V65903S85BG8 uses BW1 and BW2 for byte write control in x18 mode - BW3/BW4 are not connected.

What package type and footprint does the 71V65903S85BG8 use?

The 71V65903S85BG8 is supplied in a 119-ball fine-pitch BGA (BGG119), JEDEC MO-244AC compliant, with 12 mm × 12 mm body size and 0.8 mm ball pitch. Pinout matches the "512K × 18 BG119" configuration shown in IDT doc 5298 drw 13b - including NC placements for A10, A11, A14, A15, and A18.

How does the ZBT™ (Zero Bus Turnaround) feature work in the 71V65903S85BG8?

ZBT™ in the 71V65903S85BG8 eliminates idle cycles when switching between read and write operations. By overlapping address/control setup for the next cycle with data transfer of the current cycle, it enables immediate back-to-back bursts - e.g., a read burst can be followed directly by a write burst without inserting wait states, sustaining peak 100 MHz throughput.

What is the role of the ZZ pin on the 71V65903S85BG8, and does it retain data during sleep?

The ZZ pin on the 71V65903S85BG8 is an asynchronous, active-HIGH sleep mode input. When asserted, it gates the internal clock and reduces ICC to ≤10 µA. Data retention is fully guaranteed during sleep mode per IDT specifications - no external refresh or backup power is required for short-term hold-up.