Renesas 71V65903S85BGG8

Overview

71V65903S85BGG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K x 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration.

For engineers reviewing the 71V65903S85BGG8 datasheet, 71V65903S85BGG8 pinout, 71V65903S85BGG8 application, or 71V65903S85BGG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW2), industrial temperature range (–40°C to +85°C), and compatibility with JEDEC-standard 119-ball BGA (BGG119) packaging.

Technical Context

The 71V65903S85BGG8 implements a synchronous, clocked architecture with registered address/control inputs and flow-through data outputs-no output register-enabling deterministic timing. Its on-chip burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved sequences.

ZBT™ operation eliminates dead cycles via internal synchronization of OE and automatic bus turnaround: write-to-read and read-to-write transitions occur without idle clocks. Chip enable logic uses three pins (CE1, CE2 active-low; CE2 active-high) for depth expansion, and CEN suspends all synchronous operation while preserving register state.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), footprint code BGG8, with 1.0 mm ball pitch and 12 mm × 12 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C35128P, the 71V65903S85BGG8 delivers optimal balance of 100 MHz synchronous performance, zero-turnaround efficiency, and industrial temperature reliability - ideal for burst-intensive, clock-synchronized data path applications without QDR complexity or async latency penalties.

Availability

71V65903S85BGG8 is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, telecom line card, and industrial control applications requiring stable component supply and long-term lifecycle support.

Supply support for 71V65903S85BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for high-performance digital systems.

The 71V65903S85BGG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for low-latency, high-throughput data buffering in networking, communications, and real-time embedded systems where deterministic timing and bus efficiency are critical.

FAQ

What is the memory organization and total capacity of the 71V65903S85BGG8?

The 71V65903S85BGG8 is organized as 512K × 18, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This differs from the 256K × 36 variant (71V65703) and is optimized for 18-bit data buses common in FPGA and DSP interfaces. The 19 address lines (A0–A18) fully decode the 512K depth.

Does the 71V65903S85BGG8 support burst mode, and how is burst order selected?

Yes, the 71V65903S85BGG8 supports 4-word burst mode using an internal counter advanced by the ADV/LD signal. Burst order is selected via the LBO pin: LOW configures linear sequence (A0, A1, A2, A3), HIGH selects interleaved (A0, A2, A1, A3). This is confirmed in the functional timing diagrams and truth tables for both configurations.

What package type and footprint does the 71V65903S85BGG8 use?

The 71V65903S85BGG8 uses a 119-ball fine-pitch BGA (BGG119) package with 1.0 mm ball pitch and 12 mm × 12 mm body size. The "BGG8" suffix denotes this specific JEDEC-standard footprint. Pin configurations are validated in the BG119 drawings for the 512K × 18 variant, including dedicated I/O groups and power ball placement.

How does the ZBTTM feature improve system performance in the 71V65903S85BGG8?

ZBTTM (Zero Bus Turnaround) in the 71V65903S85BGG8 eliminates idle cycles between consecutive read and write operations. Unlike standard SRAMs requiring bus release/reacquisition, it allows immediate transition - e.g., write A0 followed by read A1 in successive clocks - sustaining full 100 MHz throughput in burst-intensive applications like packet buffering.

What are the voltage and temperature specifications for the 71V65903S85BGG8?

The 71V65903S85BGG8 operates at VDD = 3.3 V ±5% and VDDQ = 3.3 V ±5%, with industrial temperature range –40°C to +85°C. These values are specified in the Recommended DC Operating Conditions table and Absolute Maximum Ratings, confirming suitability for rugged embedded deployments without derating.