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Renesas 71V65903S85BQ

Name: 71V65903S85BQ
Brand: Renesas
SKU: 71V65903S85BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65903S85BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V65903S85BQ.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V65903S85BQ from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) for dead-cycle-free read/write transitions, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and burst data throughput.

For engineers reviewing the 71V65903S85BQ datasheet, 71V65903S85BQ pinout, 71V65903S85BQ application, or 71V65903S85BQ equivalent, key selection criteria include its 512K × 18 configuration, TQFP-100 package with verified pin mapping, industrial temperature support (–40°C to +85°C), asynchronous ZZ sleep mode, and synchronous burst control via ADV/LD and LBO.

Technical Context

The 71V65903S85BQ implements a synchronous dual-edge-triggered architecture with registered address/control inputs and flow-through data outputs-no output register-enabling immediate data availability one cycle after address load. Its on-chip burst counter supports linear or interleaved sequences selected by the static LBO pin, and burst initiation/advancement is controlled exclusively by ADV/LD sampling at the rising CLK edge.

Three chip enables (CE1, CE2 active-low; CE2 active-high) provide flexible depth expansion, while CEN suspends all synchronous operation without affecting output state. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, and ZZ enables asynchronous low-power sleep with guaranteed data retention.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18 (9.4 Mbit); supports high-bandwidth 18-bit data path in telecom and packet-switching applications.
Max Clock Frequency	100 MHz; enables 10 ns cycle time for real-time buffering in 10Gbps+ line-rate systems.
Clock-to-Data Access	7.5 ns; guarantees deterministic read latency critical for time-sensitive packet forwarding logic.
ZBT™ Architecture	No dead cycles between read/write transitions; eliminates bus turnaround overhead in burst-intensive traffic shaping.
Operating Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic families and mixed-voltage board designs.
Temperature Range	–40°C to +85°C (industrial grade); validated for deployment in uncontrolled ambient telecom infrastructure.
Burst Capability	4-word linear or interleaved burst; reduces address bus activity and controller overhead during sequential accesses.
Sleep Mode	Asynchronous ZZ input gates internal clock and reduces power; retains data with no external refresh required.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout verified per IDT document 5298 drw 02a for 512K × 18 configuration.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit synchronous address bus; A0–A18 fully utilized for 512K × 18 addressing (2¹⁹ = 524,288 words).
CE1, CE2, CE2	Chip Enables	Three independent enables: CE1/CE2 active-low, CE2 active-high; enable depth expansion without external logic.
R/W	Read/Write Control	Single synchronous signal determines cycle type; eliminates separate RD/WR pins and simplifies controller interface.
ADV/LD	Advance Burst / Load Address	Loads new external address when LOW; advances internal burst counter when HIGH-core timing control for burst mode.
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence; ties directly to VDD (interleaved) or VSS (linear) per system bus protocol requirements.
CLK	System Clock Input	Rising-edge-triggered master clock; all synchronous timing referenced to this edge (except OE and ZZ).
ZZ	Asynchronous Sleep Mode	High-active input that gates internal clock and cuts dynamic power; retains data without external intervention.
I/O0–I/O15, I/OP1–I/OP2	Data I/O (18-bit)	16 data bits + 2 parity bits (I/OP1/I/OP2); bidirectional flow-through path with no output register delay.
VDD, VDDQ, VSS	Power & Ground	Dual-supply design: VDD (3.3V core), VDDQ (3.3V I/O), and dedicated VSS planes minimize noise coupling in high-speed operation.

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates idle cycles between consecutive reads/writes-critical for sustaining full 100 MHz throughput in burst-mode packet buffers.
Flow-Through Outputs	Data appears on I/O pins one clock cycle after address load with no additional latency from output registers-reduces total memory access time.
4-Word Burst Counter	Reduces address bus toggling by 75% during sequential accesses; lowers EMI and controller resource usage in high-throughput switching ASICs.
Individual Byte Write (BW1–BW2)	Enables selective 9-bit byte writes (I/O[0:7]+I/OP1 and I/O[8:15]+I/OP2) without masking logic-preserves integrity of adjacent data in partial updates.
Asynchronous Output Enable (OE)	Allows dynamic tri-state control of I/O bus independent of clock; simplifies sharing with other devices on multiplexed data paths.
Separate VDD/VDDQ Supplies	Isolates core logic noise from I/O switching transients-improves signal integrity and timing margin in dense PCB layouts.

Applications

Network Packet Buffer	Telecom Line Card Cache
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in a multi-port switch ASIC before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with packet processor's 18-bit data bus and burst-capable memory controller. Use Value: 7.5 ns clock-to-data access and ZBT™ eliminate pipeline stalls during back-to-back frame bursts, enabling line-rate 10Gbps processing.	Use Scenario: Acting as descriptor cache for ATM or MPLS label switching engines in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic read/write response to microcoded control logic managing cell header lookups and QoS tagging. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in fanless outdoor cabinets with thermal cycling.
Baseband Processor Memory	Industrial PLC Data Log Buffer
Use Scenario: Holding intermediate FFT or channel estimation results in LTE/FDD-TDD baseband subsystems. IC Role / Device Role / Timing Role: Burst-accessible working memory synchronized to DSP core clock, supporting 4-word interleaved reads aligned to symbol boundaries. Use Value: Linear/interleaved burst selection via LBO matches native DSP memory access patterns-reducing software overhead and improving MAC efficiency.	Use Scenario: Capturing sensor timestamped samples in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile-buffered storage element accepting burst writes from ADC sequencers and serving polled reads to ARM-based host MCU. Use Value: Asynchronous ZZ sleep mode extends battery backup runtime during brownouts; flow-through outputs simplify GPIO-bus interfacing without glue logic.

Network Packet Buffer

Telecom Line Card Cache

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in a multi-port switch ASIC before classification and forwarding.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly with packet processor's 18-bit data bus and burst-capable memory controller.

Use Value: 7.5 ns clock-to-data access and ZBT™ eliminate pipeline stalls during back-to-back frame bursts, enabling line-rate 10Gbps processing.

Use Scenario: Acting as descriptor cache for ATM or MPLS label switching engines in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic read/write response to microcoded control logic managing cell header lookups and QoS tagging.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in fanless outdoor cabinets with thermal cycling.

Baseband Processor Memory

Industrial PLC Data Log Buffer

Use Scenario: Holding intermediate FFT or channel estimation results in LTE/FDD-TDD baseband subsystems.

IC Role / Device Role / Timing Role: Burst-accessible working memory synchronized to DSP core clock, supporting 4-word interleaved reads aligned to symbol boundaries.

Use Value: Linear/interleaved burst selection via LBO matches native DSP memory access patterns-reducing software overhead and improving MAC efficiency.

Use Scenario: Capturing sensor timestamped samples in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Nonvolatile-buffered storage element accepting burst writes from ADC sequencers and serving polled reads to ARM-based host MCU.

Use Value: Asynchronous ZZ sleep mode extends battery backup runtime during brownouts; flow-through outputs simplify GPIO-bus interfacing without glue logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-100AXC	512K × 18, 100 MHz, but uses QDR-II architecture with separate read/write ports and differential clocks-not ZBT™ or flow-through.	Requires dual-clock domain management and lacks ZBT™ zero-turnaround; suited for read-dominant, split-port architectures only.	Select only if system requires concurrent read/write bandwidth; not drop-in for 71V65903S85BQ's single-port burst control model.
AS7C35128PFSIG	512K × 18, 10 ns access, but asynchronous (not synchronous), no burst counter, no ZZ sleep, commercial temp only (0°C to +70°C).	Lacks clocked timing, burst capability, and industrial temp support-unsuitable for telecom or real-time embedded control.	Consider only for cost-sensitive, non-timing-critical legacy designs where synchronous features are unused.

Compared with CY7C1371DV33-100AXC and AS7C35128PFSIG, the 71V65903S85BQ uniquely delivers ZBT™-enabled dead-cycle elimination, flow-through latency, and industrial-grade reliability in a single 100-pin TQFP package-making it optimal for burst-intensive, thermally demanding infrastructure applications.

Availability

71V65903S85BQ is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V65903S85BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65903 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in networking, telecom, and high-end embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the memory organization of the 71V65903S85BQ?

The 71V65903S85BQ is organized as 512K × 18, delivering 9,437,184 bits of storage. This configuration maps to 524,288 addressable 18-bit words (2¹⁹ addresses), with A0–A18 used as the full address bus. It is distinct from the 256K × 36 variant (71V65703) and shares no pin or functional compatibility with that version.

Does the 71V65903S85BQ support burst mode, and how is it configured?

Yes, the 71V65903S85BQ supports 4-word synchronous burst mode controlled by ADV/LD and LBO. When ADV/LD is sampled HIGH, the internal counter advances; LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) sequence. Burst operation requires no external address generation-only one initial address load initiates four consecutive word transfers.

What is the function of the ZZ pin on the 71V65903S85BQ?

The ZZ pin on the 71V65903S85BQ is an asynchronous high-active sleep mode input. When asserted HIGH, it internally gates the CLK signal and places the device in ultra-low-power state while guaranteeing data retention. No external refresh or clock conditioning is needed-power resumes synchronously upon ZZ deassertion.

How does the 71V65903S85BQ implement zero bus turnaround (ZBT™)?

The 71V65903S85BQ achieves ZBT™ by eliminating dead cycles between read and write operations through synchronized control logic and flow-through outputs. Unlike conventional SRAMs, it allows immediate transition from a read burst to a write burst (or vice versa) on successive clock edges-no bus idle time-enabling sustained 100 MHz throughput in burst-intensive applications.

What package and pin count does the 71V65903S85BQ use?

The 71V65903S85BQ is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm lead pitch. Pinout is defined in IDT document 5298 drw 02a for the 512K × 18 configuration, with verified mappings for A0–A18, CE1/CE2/CE2, R/W, ADV/LD, LBO, CLK, ZZ, I/O0–I/O15, I/OP1–I/OP2, VDD, VDDQ, and VSS.

71V65903S85BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V65903S85BQ FAQ

1.How can I place an order for 71V65903S85BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S85BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S85BQ reliable?

The price and inventory of 71V65903S85BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S85BQ is usually 5 days.

3.What payment methods are accepted for 71V65903S85BQ?

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4.How is shipping managed for 71V65903S85BQ?

71V65903S85BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S85BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S85BQ?

For technical support, including 71V65903S85BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S85BQ requirements.

6.How does Aetrix verify that 71V65903S85BQ is sourced from the original manufacturer or authorized distributors?

All 71V65903S85BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S85BQ meets industry standards.

7.What is the process for return or replacement of 71V65903S85BQ?

All 71V65903S85BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S85BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S85BQ part is unused and in its original packaging.

Return procedure for 71V65903S85BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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