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Renesas 71V65903S85PFG8

Name: 71V65903S85PFG8
Brand: Renesas
SKU: 71V65903S85PFG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65903S85PFG8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V65903S85PFG8.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V65903S85PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 512K × 18 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access. It implements zero bus turnaround (ZBT) to eliminate dead cycles between read/write transitions, features flow-through outputs, and uses a synchronous burst counter for 4-word interleaved or linear bursts. It is deployed in high-speed networking packet buffers and telecom line-card data path memory.

For engineers reviewing the 71V65903S85PFG8 datasheet, 71V65903S85PFG8 pinout, 71V65903S85PFG8 application, or 71V65903S85PFG8 equivalent, key selection criteria include its 100 MHz timing compliance, 3.3V core/I/O supply tolerance (±5%), industrial temperature range (–40°C to +85°C), TQFP-100 package, and support for individual byte write control via BW1–BW4 pins.

Technical Context

The 71V65903S85PFG8 employs a synchronous architecture where address, control, and data-in signals are registered on the rising edge of CLK, while outputs are flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH and loads new addresses on ADV/LD = LOW - enabling deterministic 4-word burst sequences controlled by LBO (linear/interleaved).

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion and one-cycle deselect. Clock Enable (CEN) suspends all synchronous operation without affecting output state, and asynchronous ZZ input enables sleep mode with guaranteed data retention. OE is asynchronous but typically tied low due to internally synchronized output buffer enable.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18 (9.4 Mbit); supports x18 configuration only - defines I/O count (18 data bits + 2 parity pins I/OP1–I/OP2) and address width (A0–A18).
Clock Frequency	100 MHz maximum; enables 10 ns cycle time - critical for matching high-speed processor or ASIC bus timing in telecom/datacom systems.
Access Time	7.5 ns clock-to-data (tCD); guarantees data valid within 7.5 ns after rising CLK edge - meets tight setup/hold margins in 100 MHz designs.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow independent noise management and signal integrity optimization.
Operating Temperature	–40°C to +85°C (industrial grade); qualified for deployment in uncontrolled ambient environments like base station enclosures or industrial controllers.
Burst Capability	4-word burst (interleaved or linear); reduces address bus traffic and improves throughput - configured via static LBO pin, no software overhead.
Write Control	Individual byte write enables BW1–BW2 (for x18: BW1 controls I/O[0:7]+I/OP1, BW2 controls I/O[8:15]+I/OP2); enables partial-word updates without read-modify-write.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5298 drw 02a (PKG100 for 71V65903).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit synchronous address bus; A0–A18 fully utilized for 512K × 18 addressing (2¹⁹ = 524,288 words).
CE1, CE2, CE2	Chip Enables	Three independent enables: CE1/CE2 active-low, CE2 active-high; any false enable deselects device in one cycle with tri-state I/O.
R/W	Read/Write Control	Synchronous signal sampled at rising CLK; determines cycle type (read or write) for loaded address - no separate write-enable pin required.
ADV/LD	Advance Burst / Load Address	Controls burst counter: LOW loads new external address; HIGH increments internal counter - enables seamless burst sequencing.
LBO	Linear/Interleaved Burst Order	Static input selecting burst pattern; LOW = linear (0,1,2,3), HIGH = interleaved (0,2,1,3) - matches CPU cache line ordering conventions.
BW1, BW2	Byte Write Enables	Active-low enables for two 9-bit bytes (x18 config); BW1 → I/O[0:7]+I/OP1, BW2 → I/O[8:15]+I/OP2 - supports partial writes without bus contention.
CLK	System Clock Input	Primary timing reference; all synchronous inputs timed to rising edge - no internal PLL; clock jitter directly impacts tCD and setup/hold margins.
ZZ	Sleep Mode Input	Asynchronous HIGH activates power-down mode; gates internal CLK and reduces ICC to <100 µA - retains data with no refresh required.
I/O0–I/O15, I/OP1–I/OP2	Data I/O Pins	18-bit bidirectional data bus (16 data + 2 parity); flow-through outputs eliminate output register delay - critical for ZBT timing compliance.

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates bus turnaround dead cycles between consecutive reads/writes - enables back-to-back memory transactions at full 100 MHz without inter-cycle gaps.
Internally Synchronized OE	Removes need for precise OE timing control; output buffer enable is clock-synchronized - simplifies PCB layout and eliminates OE skew concerns.
Single R/W Pin	Reduces control pin count vs. separate RD/WR signals - lowers FPGA/ASIC GPIO usage and simplifies address/control bus routing.
Three Chip Enables	Enables depth expansion without external logic; CE1/CE2/CE2 combination allows hierarchical memory banking in multi-MB systems.
Individual Byte Write	Per-byte write control (BW1/BW2) avoids read-modify-write for partial updates - improves efficiency in protocol stack buffering and descriptor management.

Applications

Telecom Line Card Buffering	Network Packet Processing
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in carrier-grade line cards requiring deterministic latency and high throughput. IC Role / Device Role / Timing Role: High-speed dual-port-like buffer using ZBT's zero-turnaround capability to interleave ingress/egress traffic on shared bus. Use Value: 100 MHz operation and 7.5 ns tCD ensure sub-10 ns memory access aligns with 10 Gbps+ PHY timing budgets without pipeline stalls.	Use Scenario: Temporary storage of packet headers and metadata in deep-buffering switches/routers during classification and forwarding. IC Role / Device Role / Timing Role: Burst-capable SRAM serving as fast-access scratchpad for ASIC-based packet engines performing parallel lookups and modifications. Use Value: 4-word burst mode reduces address bus cycles by 75% per transaction - increases effective bandwidth to >1.4 Gbps (18-bit × 100 MHz).
Industrial PLC Data Logging	Medical Imaging Frame Buffer
Use Scenario: Cyclic acquisition and timestamped storage of sensor data in ruggedized programmable logic controllers operating across wide temperature ranges. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing non-refreshed, reliable storage for real-time process variables with guaranteed data retention in sleep mode (ZZ). Use Value: –40°C to +85°C rating and ZZ sleep mode (<100 µA ICC) enable battery-backed logging in fanless enclosures without thermal derating.	Use Scenario: Intermediate frame storage in portable ultrasound or digital X-ray systems where compact size and low power are critical. IC Role / Device Role / Timing Role: Low-pin-count (TQFP-100), 3.3V-compatible SRAM acting as line buffer between image sensor interface and compression engine. Use Value: Flow-through outputs and single R/W pin simplify interface to FPGA-based video pipelines - reducing HDL logic and PCB layer count.

Telecom Line Card Buffering

Network Packet Processing

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in carrier-grade line cards requiring deterministic latency and high throughput.

IC Role / Device Role / Timing Role: High-speed dual-port-like buffer using ZBT's zero-turnaround capability to interleave ingress/egress traffic on shared bus.

Use Value: 100 MHz operation and 7.5 ns tCD ensure sub-10 ns memory access aligns with 10 Gbps+ PHY timing budgets without pipeline stalls.

Use Scenario: Temporary storage of packet headers and metadata in deep-buffering switches/routers during classification and forwarding.

IC Role / Device Role / Timing Role: Burst-capable SRAM serving as fast-access scratchpad for ASIC-based packet engines performing parallel lookups and modifications.

Use Value: 4-word burst mode reduces address bus cycles by 75% per transaction - increases effective bandwidth to >1.4 Gbps (18-bit × 100 MHz).

Industrial PLC Data Logging

Medical Imaging Frame Buffer

Use Scenario: Cyclic acquisition and timestamped storage of sensor data in ruggedized programmable logic controllers operating across wide temperature ranges.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing non-refreshed, reliable storage for real-time process variables with guaranteed data retention in sleep mode (ZZ).

Use Value: –40°C to +85°C rating and ZZ sleep mode (<100 µA ICC) enable battery-backed logging in fanless enclosures without thermal derating.

Use Scenario: Intermediate frame storage in portable ultrasound or digital X-ray systems where compact size and low power are critical.

IC Role / Device Role / Timing Role: Low-pin-count (TQFP-100), 3.3V-compatible SRAM acting as line buffer between image sensor interface and compression engine.

Use Value: Flow-through outputs and single R/W pin simplify interface to FPGA-based video pipelines - reducing HDL logic and PCB layer count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-100AXC	512K × 18 QDR SRAM; 100 MHz double-data-rate interface; differential clocks; higher pin count (165-ball FBGA).	Requires DDR timing control and matched trace lengths; suited for cache-coherent multiprocessor systems, not ZBT-style burst simplicity.	Select when system demands >2× bandwidth via DDR and can accommodate complex layout; avoid if ZBT compatibility or TQFP footprint is required.
AS7C35128PFSIG	512K × 18 async SRAM; no clock, no burst, no ZBT; 15 ns access; 3.3V only; TQFP-100 package.	Lacks synchronous timing, burst, or zero-turnaround - limits use to low-frequency control-plane memory or legacy upgrades.	Select only for cost-sensitive, non-real-time applications where 100 MHz speed and burst efficiency are unnecessary.

Compared with CY7C1371DV33-100AXC and AS7C35128PFSIG, the 71V65903S85PFG8 uniquely delivers ZBT timing, synchronous burst, and industrial TQFP packaging in a single 100-pin solution - making it optimal for space-constrained, high-throughput embedded data path designs without DDR complexity.

Availability

71V65903S85PFG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and medical imaging systems requiring stable component supply, long-lifecycle support, and industrial-grade reliability.

Supply support for 71V65903S85PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V65903S85PFG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, high-bandwidth data buffering in network processors, baseband units, and real-time embedded systems demanding deterministic memory access.

FAQ

What memory organization does the 71V65903S85PFG8 support?

The 71V65903S85PFG8 is strictly organized as 512K × 18 (9,437,184 bits), with 19 address lines (A0–A18) and 18 data/parity I/Os (I/O0–I/O15, I/OP1–I/OP2). It does not support the 256K × 36 configuration - that variant is implemented in the 71V65703, not the 71V65903S85PFG8.

Does the 71V65903S85PFG8 require external output enable (OE) control?

No - the 71V65903S85PFG8 features internally synchronized output buffer enable, eliminating the need for active OE timing control. OE is asynchronous but may be tied low in most designs; outputs remain high-impedance only during deselect or power-up, not during normal read/write cycles.

What is the function of the CE2 pin on the 71V65903S85PFG8?

CE2 is an active-high chip enable pin, complementary to CE1 and CE2 (both active-low). The 71V65903S85PFG8 is enabled only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. CE2 provides polarity flexibility for hierarchical memory decoding schemes without requiring external inverters.

Can the 71V65903S85PFG8 operate in sleep mode while retaining data?

Yes - asserting ZZ HIGH places the 71V65903S85PFG8 into sleep mode, gating the internal clock and reducing ICC to under 100 µA. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C) with no refresh required, enabling ultra-low-power standby in battery-backed systems.

How does burst addressing work on the 71V65903S85PFG8?

Burst addressing is controlled by ADV/LD and LBO. When ADV/LD = HIGH, the internal counter increments; when ADV/LD = LOW, a new external address is loaded. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) sequence - both deliver four consecutive words with no additional address setup, reducing bus overhead by 75% per burst.

71V65903S85PFG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V65903S85PFG8 FAQ

1.How can I place an order for 71V65903S85PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65903S85PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65903S85PFG8 reliable?

The price and inventory of 71V65903S85PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65903S85PFG8 is usually 5 days.

3.What payment methods are accepted for 71V65903S85PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65903S85PFG8 transactions.

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4.How is shipping managed for 71V65903S85PFG8?

71V65903S85PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65903S85PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65903S85PFG8?

For technical support, including 71V65903S85PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65903S85PFG8 requirements.

6.How does Aetrix verify that 71V65903S85PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V65903S85PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65903S85PFG8 meets industry standards.

7.What is the process for return or replacement of 71V65903S85PFG8?

All 71V65903S85PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65903S85PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65903S85PFG8 part is unused and in its original packaging.

Return procedure for 71V65903S85PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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