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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67602S133BGG

Name: 71V67602S133BGG
Brand: Renesas
SKU: 71V67602S133BGG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67602S133BGG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67602S133BGG.pdf

Description:: IC SRAM 9MBIT PARALLEL 119PBGA

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Product details

Overview

71V67602S133BGG from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O supply, and 133MHz clock operation (4.2ns access time). It supports linear/interleaved burst modes via LBO pin, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C). Used in high-speed networking buffers and cache memory subsystems requiring deterministic timing.

For engineers reviewing the 71V67602S133BGG datasheet, 71V67602S133BGG pinout, 71V67602S133BGG application, or 71V67602S133BGG equivalent, key selection criteria include burst address counter behavior, single-cycle deselect capability, 100-pin TQFP package compatibility, and VDD/VDDQ dual-supply sequencing requirements.

Technical Context

The 71V67602S133BGG implements a synchronous pipeline architecture where address latching is triggered by ADSP/ADSC low transitions coincident with CE low and CLK rising edge. Its internal burst counter advances on ADV low, generating four consecutive addresses per initial address-order determined by static LBO input state (linear vs. interleaved).

Write operations are fully registered: GW enables full 36-bit writes, while BWE and BW1–BW4 enable selective 9-bit byte writes. Output drivers are clocked, supporting pipelined read data with tCD = 4.2ns (133MHz), and OE provides asynchronous output enable/disable with tOHZ = 4.2ns.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9,175,040 bits); supports 512K × 18-bit mode via pin configuration
Clock Frequency	133MHz max - defines system bus timing budget and maximum sustained throughput of 532MB/s (36-bit × 133MHz)
Access Time	4.2ns (tCD) - guaranteed valid data output delay after CLK high, critical for setup timing closure
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 2.5V ±5% (I/O) - mandates separate power domains and decoupling
Operating Temperature	0°C to +70°C (Commercial grade) - validated for non-extended ambient environments
Power Consumption	IDD = 260mA max at 133MHz - translates to ~858mW core power (3.3V × 260mA), requiring thermal-aware layout
Package	100-pin TQFP (14mm × 20mm, JEDEC standard) - compatible with standard SMT reflow profiles and automated optical inspection

Pinout & Package

71V67602S133BGG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm lead pitch. Pin 1 is located at top-left corner (notch-marked side), with pins numbered counter-clockwise.

Pin	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge when ADSP/ADSC and CE active; A0–A17 used for 256K×36 mode
CLK	Clock Input	Primary timing reference; all synchronous registers (address, data, control) edge-triggered on rising edge
CE, CS0, CS1	Chip Enable / Selects	Three-input chip select logic: CE low + CS0 high + CS1 low enables device; enables multi-chip memory expansion
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.)
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; registered input/output paths; high-impedance when OE high or chip deselected
OE	Output Enable	Asynchronous control: drives I/O pins to active state when low (regardless of CLK), high-Z when high
ZZ	Sleep Mode Input	Asynchronous high-active signal that gates internal CLK and reduces ICC to ≤70mA (ISB1/IZZ), retaining data
LBO	Burst Order Select	Static input defining burst sequence: LBO low = linear, LBO high = interleaved; must not toggle during operation

Key Features

Feature	Design Value
Pipelined Burst Outputs	Delivers four consecutive data words per address with 1-cycle pipeline latency - eliminates wait states in burst-oriented processors
Single-Cycle Deselect	Device enters high-impedance state within one CLK cycle after CE/CS deassertion - prevents bus contention in multi-SRAM systems
Self-Timed Write Cycle	Internal timing logic completes write without external strobe; supports mixed GW/BWx activation without external timing management
Dual-Voltage I/O Interface	VDDQ = 2.5V I/O domain isolates signaling from 3.3V core - enables interoperability with 2.5V logic families and reduces switching noise
Configurable Burst Mode	LBO pin selects linear or interleaved addressing - matches processor cache line ordering (e.g., Pentium vs. PowerPC)

Applications

Networking Packet Buffer	High-Speed Cache Memory
Use Scenario: Temporary storage of Ethernet frames in Layer 2 switches before forwarding or classification. IC Role / Device Role / Timing Role: Asynchronous-to-synchronous bridge buffering incoming packets at wire speed; uses burst reads to feed ASIC parser engines. Use Value: 133MHz clock and 4.2ns tCD ensure sub-10ns read turnaround, enabling line-rate 1Gbps packet processing without FIFO stalls.	Use Scenario: Secondary cache (L2) for embedded RISC processors in industrial controllers requiring deterministic latency. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory extension with pipelined outputs synchronized to CPU clock domain. Use Value: Single-cycle deselect and burst mode reduce average access latency by 40% vs. discrete async SRAM, improving real-time response.
Telecom Line Card Buffer	Test Equipment Pattern Memory
Use Scenario: Jitter attenuation and protocol conversion buffer in T1/E1 line interface units. IC Role / Device Role / Timing Role: Synchronous FIFO staging point between serial framers and backplane bus; leverages ZZ sleep for power gating between bursts. Use Value: 2.5V I/O and 3.3V core allow direct interfacing with both framer ICs and FPGA logic, eliminating level shifters.	Use Scenario: Vector pattern storage in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic, high-throughput memory delivering stimulus/response vectors at precise clock-aligned intervals. Use Value: Guaranteed 4.2ns tCD and 0.5ns hold times enable reliable 133MHz pattern generation with <10ps jitter accumulation over 10k cycles.

Networking Packet Buffer

High-Speed Cache Memory

Use Scenario: Temporary storage of Ethernet frames in Layer 2 switches before forwarding or classification.

IC Role / Device Role / Timing Role: Asynchronous-to-synchronous bridge buffering incoming packets at wire speed; uses burst reads to feed ASIC parser engines.

Use Value: 133MHz clock and 4.2ns tCD ensure sub-10ns read turnaround, enabling line-rate 1Gbps packet processing without FIFO stalls.

Use Scenario: Secondary cache (L2) for embedded RISC processors in industrial controllers requiring deterministic latency.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory extension with pipelined outputs synchronized to CPU clock domain.

Use Value: Single-cycle deselect and burst mode reduce average access latency by 40% vs. discrete async SRAM, improving real-time response.

Telecom Line Card Buffer

Test Equipment Pattern Memory

Use Scenario: Jitter attenuation and protocol conversion buffer in T1/E1 line interface units.

IC Role / Device Role / Timing Role: Synchronous FIFO staging point between serial framers and backplane bus; leverages ZZ sleep for power gating between bursts.

Use Value: 2.5V I/O and 3.3V core allow direct interfacing with both framer ICs and FPGA logic, eliminating level shifters.

Use Scenario: Vector pattern storage in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: Deterministic, high-throughput memory delivering stimulus/response vectors at precise clock-aligned intervals.

Use Value: Guaranteed 4.2ns tCD and 0.5ns hold times enable reliable 133MHz pattern generation with <10ps jitter accumulation over 10k cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1372BV133BZC	256K × 32-bit organization; 3.3V-only supply (no VDDQ separation); 133MHz, 4.5ns tCD	Lacks 2.5V I/O domain - requires level-shifting for 2.5V logic interfaces; no LBO-configurable burst order	Select when board already uses 3.3V I/O and burst mode flexibility is unnecessary; verify timing margin with longer tCD.
AS7C33128P-133JCIN	256K × 36-bit; 3.3V core/I/O; 133MHz, 4.5ns tCD; 100-pin TQFP; no ZZ sleep or LBO	No sleep mode or burst order selection - higher standby current (ISB1 = 120mA vs. 50mA); fixed linear burst only	Choose for cost-sensitive designs where power-down and burst configurability are non-critical; validate thermal dissipation at full load.

Compared with CY7C1372BV133BZC and AS7C33128P-133JCIN, the 71V67602S133BGG uniquely delivers dual-voltage I/O, configurable burst order, and ultra-low sleep current - essential for power-constrained, multi-protocol, or cache-coherent systems.

Availability

71V67602S133BGG is available at Aetrix Electronics and suitable for networking packet buffers, high-speed cache memory, telecom line card buffers, and test equipment pattern memory requiring stable component supply and long-term obsolescence planning.

Supply support for 71V67602S133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V67602 product line was designed for high-bandwidth, low-latency synchronous memory applications in network infrastructure and embedded systems demanding deterministic burst access and power-efficient operation.

FAQ

What is the correct power-up sequence for 71V67602S133BGG?

The 71V67602S133BGG does not require strict power sequencing: VDD and VDDQ may ramp simultaneously or independently. However, no input or I/O pin voltage may exceed VDDQ during ramp-up. Once powered, the device enters standby until CE/CS0/CS1 assert valid levels. Full functionality is guaranteed after tPU (power-up time) - typically <100ns - with CLK stable.

Does 71V67602S133BGG support interleaved burst mode?

Yes, 71V67602S133BGG supports both linear and interleaved burst modes. The LBO pin selects the mode: LBO = LOW enables linear burst; LBO = HIGH enables interleaved burst. This selection is static and must remain stable during operation - changing LBO mid-burst causes undefined address sequencing.

How does the ZZ pin affect 71V67602S133BGG operation?

The ZZ pin places 71V67602S133BGG into full sleep mode when driven HIGH. In this state, internal clocks are gated, ICC drops to ≤70mA (IZZ), and data retention is guaranteed. All I/Os go high-impedance regardless of OE state. Recovery time tZZR is 100ns minimum after ZZ returns LOW before valid operations resume.

Can 71V67602S133BGG operate in 512K × 18-bit mode?

Yes, 71V67602S133BGG supports 512K × 18-bit configuration by reassigning address pins (e.g., A18 becomes address bit) and disabling unused I/Os. Pin configurations differ between 256K×36 and 512K×18 modes - refer to Figures 02 and 03 in the datasheet for exact pin mappings and NC assignments.

What is the function of ADV and ADSP/ADSC pins on 71V67602S133BGG?

ADV advances the internal burst counter on LOW; when HIGH, it suspends burst progression. ADSP (processor address status) and ADSC (cache controller address status) are synchronous inputs that latch the address register on their falling edge, provided CE is LOW. ADSP is gated by CE; ADSC is independent. Both define the base address for burst sequences.

71V67602S133BGG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67602S133BGG FAQ

1.How can I place an order for 71V67602S133BGG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67602S133BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67602S133BGG reliable?

The price and inventory of 71V67602S133BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S133BGG is usually 5 days.

3.What payment methods are accepted for 71V67602S133BGG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67602S133BGG transactions.

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71V67602S133BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67602S133BGG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67602S133BGG?

For technical support, including 71V67602S133BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S133BGG requirements.

6.How does Aetrix verify that 71V67602S133BGG is sourced from the original manufacturer or authorized distributors?

All 71V67602S133BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S133BGG meets industry standards.

7.What is the process for return or replacement of 71V67602S133BGG?

All 71V67602S133BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S133BGG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67602S133BGG part is unused and in its original packaging.

Return procedure for 71V67602S133BGG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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