Renesas 71V67602S133BGG8

Overview

71V67602S133BGG8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 133MHz clock operation, 4.2ns clock-to-data access time, and 2.5V I/O supply. It implements burst counter logic with linear/interleaved mode selection via LBO and supports single-cycle deselect for high-speed cache and buffer applications in networking line cards.

For engineers reviewing the 71V67602S133BGG8 datasheet, 71V67602S133BGG8 pinout, 71V67602S133BGG8 application, or 71V67602S133BGG8 equivalent, key selection criteria include synchronous burst timing compliance, 100-pin TQFP mechanical fit, 2.5V I/O voltage tolerance, and support for self-timed write with byte- or global-write enable control.

Technical Context

The 71V67602S133BGG8 integrates address latching, burst address sequencing, and registered I/O paths synchronized to CLK. Its internal burst counter advances on ADV=LOW and selects linear or interleaved order based on static LBO state-no reconfiguration during operation.

All control inputs (CE, CS0, CS1, ADSP, ADSC, GW, BWE, BW1–BW4, OE) are synchronous except OE (asynchronous) and ZZ/LBO (asynchronous static). Write cycles use either global write (GW) or byte-selectable writes gated by BWE, with output drivers disabled during active write to prevent bus contention.

Key Specifications

Pinout & Package

71V67602S133BGG8 is packaged in a JEDEC-standard 100-pin TQFP (14mm × 20mm) with exposed thermal pad. Pin functions are fully defined for the 256K × 36 configuration; NC pins are electrically unconnected and must not be driven.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-133AXC and AS7C3256B-133JCIN, the 71V67602S133BGG8 uniquely delivers 2.5V I/O compatibility, configurable linear/interleaved burst, and true pipelined output timing-making it optimal for latency-critical, mixed-voltage, burst-oriented systems.

Availability

71V67602S133BGG8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, telecom baseband processing, and industrial real-time controller buffer applications requiring stable component supply across commercial and industrial temperature ranges.

Supply support for 71V67602S133BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.

The IDT71V67602 product line was designed specifically for high-bandwidth, low-latency synchronous memory applications in networking, telecom, and embedded systems-emphasizing burst efficiency, power-aware sleep modes, and robust signal integrity at 133MHz.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67602S133BGG8?

The 71V67602S133BGG8 is rated for 133MHz operation with a guaranteed clock-to-valid-data access time (tCD) of 4.2ns. This specification applies across the commercial (0°C to +70°C) and industrial (−40°C to +85°C) temperature ranges under recommended 3.3V ±5% VDD and 2.5V ±5% VDDQ conditions. The device also supports 150MHz (3.8ns tCD) and 166MHz (3.5ns tCD) variants, but the 71V67602S133BGG8 is specifically characterized and screened for 133MHz performance.

How does the LBO pin affect burst behavior in the 71V67602S133BGG8?

The LBO (Linear Burst Order) pin on the 71V67602S133BGG8 is an asynchronous static input that determines the internal burst address sequence: when LBO is LOW, the device uses linear burst order (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO must remain stable during operation-changing it mid-burst causes undefined address sequencing. The selected mode affects how four consecutive words are accessed from a single base address, optimizing for cache (linear) or DSP (interleaved) workloads.

Can the 71V67602S133BGG8 operate with only 3.3V supply, or is the 2.5V VDDQ rail mandatory?

The 2.5V VDDQ supply is mandatory for correct operation of the 71V67602S133BGG8. While VDD is specified at 3.3V ±5% for the core logic, VDDQ must be independently regulated at 2.5V ±5% to power the I/O buffers. Operating VDDQ outside this range risks violating VIH/VIL thresholds for I/O signals, causing data corruption or timing violations. The dual-supply architecture isolates I/O noise from the core and ensures compatibility with 2.5V system interfaces.

What is the function of the ZZ pin, and how does it impact power consumption in the 71V67602S133BGG8?

The ZZ (Sleep Mode) pin on the 71V67602S133BGG8 is an asynchronous input that places the device into full sleep mode when driven HIGH. In this state, the internal clock is gated, dynamic power drops sharply, and supply current (IZZ) is guaranteed ≤70mA at industrial temperature-reducing active power by up to 80% versus standby (ISB1). Data retention is maintained, and recovery time (tZZR) is 100ns, allowing rapid wake-up without initialization overhead.

Does the 71V67602S133BGG8 support byte-wide writes, and how are they enabled?

Yes, the 71V67602S133BGG8 supports independent 9-bit byte writes via BW1–BW4 inputs, each controlling one 9-bit segment of the 36-bit data bus (BW1: I/O0–I/O7 + I/OP1; BW2: I/O8–I/O15 + I/OP2; etc.). Byte writes require BWE=LOW to pass BWx signals to the write path; if BWE=HIGH, only GW can initiate a write. Activating any BWx disables all outputs during the write cycle to prevent bus contention-a critical design feature for reliable multi-SRAM bus sharing.