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Renesas 71V67602S133PFG

Part No.:
71V67602S133PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V67602S133PFG.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,828

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Product details

Overview

71V67602S133PFG from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 133MHz clock operation, 4.2ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write with global/byte-level write control - used in high-speed cache buffers and network packet memory subsystems.

For engineers reviewing the 71V67602S133PFG datasheet, 71V67602S133PFG pinout, 71V67602S133PFG application, or 71V67602S133PFG equivalent, key selection criteria include burst counter behavior, single-cycle deselect timing, ZZ sleep mode current (≤70mA), VDDQ=2.5V I/O compatibility, and TQFP-100 package mechanical fit for legacy telecom backplane designs.

Technical Context

The 71V67602S133PFG implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO level - no reconfiguration during active burst.

Write operations are self-timed: GW enables full 36-bit writes, while BWE + BW1–BW4 enable selective 9-bit byte writes. OE is asynchronous for output gating; ZZ input asynchronously places the device into low-power sleep mode with data retention guaranteed.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 256K × 36-bit (9,175,040 bits); supports 512K × 18-bit configuration via pin strapping
Clock Frequency 133MHz max - defines system bus timing budget; tCYC = 7.5ns minimum cycle time
Access Time tCD = 4.2ns (clock-high to valid data) - determines read latency in pipelined burst cycles
Supply Voltages VDD = 3.3V ±5% (core), VDDQ = 2.5V ±5% (I/O) - mandates dual-rail power delivery design
Power Consumption IDD = 280mA (133MHz, industrial temp); IZZ = 70mA (sleep mode) - impacts thermal management in dense PCB layouts
Burst Mode Control LBO pin selects linear vs. interleaved 4-word burst sequence - affects cache line alignment in processor interfaces
Package JEDEC-standard 100-pin TQFP (14mm × 20mm) - compatible with wave-solder and reflow profiles for industrial assembly

Pinout & Package

71V67602S133PFG is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-145AC, 14mm × 20mm body, 0.5mm lead pitch. Pin 1 marked by dot; pins arranged in four 25-pin sides.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs Synchronous inputs latched on rising CLK edge with ADSP/ADSC assertion; A0–A17 used for 256K×36 addressing
CLK Clock Input Primary timing reference; all synchronous registers (address, data, control) triggered on rising edge
CE, CS0, CS1 Chip Enable / Selects Three-input chip select logic: CE=LOW, CS0=HIGH, CS1=LOW required for device activation
GW, BWE, BW1–BW4 Write Control Inputs GW enables full 36-bit write; BWE gates BW1–BW4; each BWx controls one 9-bit byte (BW1→I/O0–7+I/OP1)
OE Output Enable Asynchronous control: OE=LOW enables I/O drivers; OE=HIGH forces high-impedance state independent of CLK
ZZ Sleep Mode Input Asynchronous HIGH disables internal clock and reduces ICC to ≤70mA; retains data without external refresh
I/O0–I/O31, I/OP1–I/OP4 Data I/O 36-bit bidirectional synchronous bus; registered input/output paths; VDDQ=2.5V referenced
VDD, VDDQ, VSS Power/Ground VDD=3.3V core, VDDQ=2.5V I/O, multiple VSS pins distributed for noise suppression and signal integrity

Key Features

Feature Design Value
Pipelined Burst Outputs Four consecutive data words delivered on four successive CLK edges after single address setup - eliminates wait states in high-throughput memory access
Single-Cycle Deselect Device enters high-Z output state within one clock cycle of CE/CS deassertion - prevents bus contention during rapid bank switching
Configurable Burst Order LBO pin statically selects linear (LBO=LOW) or interleaved (LBO=HIGH) address sequence - matches CPU cache line mapping requirements
Self-Timed Write Cycle Internal timing logic completes write without external strobe; GW or BWx assertion on CLK edge initiates autonomous write completion
Low-Power Sleep Mode ZZ=HIGH reduces ICC to ≤70mA while retaining full memory contents - enables power-gating in portable/network edge equipment
Dual-Voltage I/O Interface VDDQ=2.5V I/O supply isolates memory interface from 3.3V core - simplifies level-shifting in mixed-voltage SoC interconnects

Applications

Network Packet Buffering High-Speed Cache Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision and egress scheduling.

IC Role / Device Role / Timing Role: Asynchronous burst-access buffer interfacing with MAC controller and traffic manager ASICs via 133MHz synchronous bus.

Use Value: 4.2ns tCD and pipelined outputs enable sub-8ns effective read latency across 4-word bursts - critical for meeting 10Gbps line-rate buffering deadlines.

Use Scenario: Secondary cache for RISC-based baseband processors in 3G/4G wireless infrastructure base stations.

IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency instruction/data storage between CPU and DDR2 main memory.

Use Value: Single-cycle deselect and 280mA IDD at 133MHz allow deterministic cache refill without bus arbitration stalls in real-time DSP workloads.

Telecom Line Card Memory Industrial PLC Data Logging

Use Scenario: Buffering TDM voice channel samples and signaling messages in carrier-grade SONET/SDH line cards.

IC Role / Device Role / Timing Role: Burst-mode memory supporting 125MHz–133MHz backplane timing with strict jitter tolerance.

Use Value: LBO-configurable burst order aligns with TI TMS320C64x+ EMIF addressing patterns - eliminating software address remapping overhead.

Use Scenario: High-reliability cyclic data storage for sensor fusion and motion control logs in factory automation controllers.

IC Role / Device Role / Timing Role: Nonvolatile-buffered SRAM operating across -40°C to +85°C with guaranteed data retention in ZZ sleep mode.

Use Value: 70mA IZZ sleep current and industrial temperature rating enable battery-backed logging during mains power loss without DRAM refresh circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33-133AXC Same 256K×36 organization, 133MHz, but uses 3.3V-only I/O (no VDDQ separation); 100-pin TQFP package Lacks 2.5V I/O isolation - requires level-shifting when interfacing with 2.5V logic; higher standby current (ISB1 = 100mA) Select when existing board uses 3.3V I/O rails and layout cannot accommodate dual-supply decoupling.
AS7C3256B-133JCIN 256K×32 organization (32-bit bus), 133MHz, 3.3V core/I/O; 100-pin TQFP; no ZZ sleep mode 4-bit narrower data bus; no hardware sleep control - relies on deselection only; higher active power (IDD = 320mA) Select when system prioritizes cost over power efficiency and can accept reduced burst width or software-managed low-power states.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 71V67602S133PFG uniquely delivers 2.5V I/O voltage separation and hardware-controlled ZZ sleep mode - enabling lower system-level power and simplified interface design in mixed-voltage telecom and industrial platforms.

Availability

71V67602S133PFG is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, and telecom line card memory requiring stable component supply across extended product lifecycles.

Supply support for 71V67602S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V67602 product line was designed for high-bandwidth, low-latency synchronous memory applications in telecom infrastructure, networking equipment, and real-time embedded systems requiring burst-mode performance and industrial temperature reliability.

FAQ

What is the maximum clock frequency supported by the 71V67602S133PFG?

The 71V67602S133PFG is rated for 133MHz operation with tCYC = 7.5ns minimum clock cycle time. This frequency is validated across commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges under VDD = 3.3V ±5% and VDDQ = 2.5V ±5%. Exceeding 133MHz violates AC timing specifications including tCD and setup/hold margins.

Does the 71V67602S133PFG support both linear and interleaved burst modes?

Yes, the 71V67602S133PFG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear burst addressing (00→01→10→11); when LBO = HIGH, it uses interleaved order (00→01→11→10). LBO is a static input and must not change during active burst operation.

How does the ZZ pin function in the 71V67602S133PFG?

The ZZ pin on the 71V67602S133PFG provides asynchronous entry into full sleep mode. When ZZ = HIGH, the internal clock is gated and supply current drops to ≤70mA (industrial grade) while retaining all stored data. Recovery requires tZZR ≥ 100ns after ZZ returns LOW before valid accesses resume.

What is the purpose of the ADV pin in the 71V67602S133PFG?

The ADV (Burst Address Advance) pin controls burst counter progression in the 71V67602S133PFG. When ADV = LOW during a burst cycle, the internal counter increments to deliver the next sequential address. When ADV = HIGH, burst advancement halts - suspending the burst and holding the current address for repeated access or partial burst termination.

Can the 71V67602S133PFG operate with different memory configurations?

Yes, the 71V67602S133PFG supports two configurations: 256K × 36-bit (primary) and 512K × 18-bit (via pin strapping). The latter uses fewer address bits (A0–A18) and reassigns some BWx pins as address extensions. Configuration is determined at power-up by CS0 and ADSC pin states per the device's mode register initialization sequence.

71V67602S133PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V67602S133PFG FAQ

1.How can I place an order for 71V67602S133PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67602S133PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67602S133PFG reliable?

The price and inventory of 71V67602S133PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S133PFG is usually 5 days.

3.What payment methods are accepted for 71V67602S133PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67602S133PFG transactions.

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4.How is shipping managed for 71V67602S133PFG?

71V67602S133PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67602S133PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67602S133PFG?

For technical support, including 71V67602S133PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S133PFG requirements.

6.How does Aetrix verify that 71V67602S133PFG is sourced from the original manufacturer or authorized distributors?

All 71V67602S133PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S133PFG meets industry standards.

7.What is the process for return or replacement of 71V67602S133PFG?

All 71V67602S133PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S133PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67602S133PFG part is unused and in its original packaging.

Return procedure for 71V67602S133PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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