Renesas 71V67602S133PFG8

Overview

IDT71V67602S133PFG8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with 2.5V I/O, pipelined outputs, and single-cycle deselect. It supports 133MHz operation with 4.2ns clock access time, burst counter addressing, and linear/interleaved burst modes via LBO pin. Used in high-speed cache and buffer applications requiring deterministic timing and low-latency data access.

For engineers reviewing the IDT71V67602S133PFG8 datasheet, IDT71V67602S133PFG8 pinout, IDT71V67602S133PFG8 application, or IDT71V67602S133PFG8 equivalent, key selection criteria include synchronous burst read/write capability, 100-pin TQFP package compatibility, 3.3V core / 2.5V I/O supply separation, ZZ sleep mode support, and pipelined output timing compliance with 133MHz system clocks.

Technical Context

The IDT71V67602S133PFG8 implements a synchronous interface with registered address, control, and data paths triggered on the rising edge of CLK. Its internal burst address counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO input state - no runtime reconfiguration permitted.

Burst writes are self-timed using GW (global write), BWE (byte write enable), and BW1–BW4 (individual byte enables), with asynchronous OE and ZZ inputs enabling output disable and full sleep mode respectively. The device features dual power domains (VDD=3.3V, VDDQ=2.5V) and supports commercial temperature range (0°C to +70°C).

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin TQFP (14mm × 20mm, 0.5mm pitch), the IDT71V67602S133PFG8 features dedicated synchronous control inputs (CLK, CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4, OE), asynchronous sleep (ZZ) and burst order (LBO), 19 address lines (A0–A18), and 36 bidirectional data lines plus 4 parity pins (I/O0–I/O31, I/OP1–I/OP4).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-133AXC and AS7C36256PFSI-133, the IDT71V67602S133PFG8 uniquely provides 2.5V I/O voltage separation and configurable burst ordering (LBO), enabling direct interface to 2.5V FPGAs and optimization for specific cache line layouts - critical for latency-sensitive real-time systems.

Availability

IDT71V67602S133PFG8 is available at Aetrix Electronics and suitable for high-speed cache subsystems, network packet buffering, industrial data logging, medical imaging frame storage, and real-time signal processing applications requiring stable component supply across long production lifecycles.

Supply support for IDT71V67602S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The IDT71V67602S133PFG8 belongs to IDT's 71V67xx family of synchronous SRAMs engineered for low-latency, burst-mode data buffering in bandwidth-constrained embedded systems operating at 133MHz and above.

FAQ

What is the maximum clock frequency supported by the IDT71V67602S133PFG8?

The IDT71V67602S133PFG8 is rated for 133MHz operation, corresponding to a minimum clock cycle time (tCYC) of 7.5ns. This rating is guaranteed across the commercial temperature range (0°C to +70°C) with VDD = 3.3V ±5% and VDDQ = 2.5V ±5%. Exceeding 133MHz violates AC timing specifications and may cause data corruption or metastability.

Does the IDT71V67602S133PFG8 support both linear and interleaved burst modes?

Yes, the IDT71V67602S133PFG8 supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing; when HIGH, it uses interleaved burst order. LBO is a static input and must remain stable during active operation - changing it mid-burst is undefined.

How does the ZZ pin function in the IDT71V67602S133PFG8?

The ZZ pin on the IDT71V67602S133PFG8 is an asynchronous sleep mode input. When pulled HIGH, it gates the internal clock and reduces supply current to 50mA (IZZ) while retaining memory contents. No sequencing is required - ZZ can be asserted at any time. To exit sleep mode, ZZ must be returned LOW and tZZR (100ns minimum) observed before initiating new accesses.

What is the role of the ADV pin in burst operation of the IDT71V67602S133PFG8?

The ADV (Burst Address Advance) pin controls burst counter progression in the IDT71V67602S133PFG8. When ADV is LOW during a valid read/write cycle, the internal burst counter increments to generate the next sequential address. When ADV is HIGH, the counter holds - suspending burst mode and repeating the current address for subsequent cycles. ADV is sampled synchronously on the rising CLK edge.

Can the IDT71V67602S133PFG8 operate with different supply voltages for core and I/O?

Yes, the IDT71V67602S133PFG8 requires two independent supplies: VDD = 3.3V ±5% for core logic and VDDQ = 2.5V ±5% for I/O buffers. This separation allows direct interfacing with 2.5V FPGAs, ASICs, or processors while maintaining 3.3V core speed and noise immunity. Mixing voltages or omitting either supply violates Absolute Maximum Ratings and will damage the device.