Renesas 71V67602S133PFGI

Overview

71V67602S133PFGI from Integrated Device Technology is a 256K × 36-bit (9-Mbit) synchronous SRAM with pipelined outputs, 133 MHz clock operation, 4.2 ns clock-to-data access time, 3.3 V core supply, and 2.5 V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write with global or byte-level write control - used in high-speed cache buffers and network packet memory subsystems.

For engineers reviewing the 71V67602S133PFGI datasheet, 71V67602S133PFGI pinout, 71V67602S133PFGI application, or 71V67602S133PFGI equivalent, key selection criteria include burst counter behavior, single-cycle deselect timing, ZZ sleep mode current (≤70 µA), 100-pin TQFP package compatibility, and 256K×36 vs. 512K×18 configuration flexibility.

Technical Context

The 71V67602S133PFGI implements a synchronous dual-register architecture: address latching via ADSP/ADSC inputs on CLK rising edge, and pipelined data output with one-cycle latency. Burst addressing is managed by an internal binary counter synchronized to ADV and gated by LBO for linear or interleaved sequences.

Write operations support four distinct control paths: global write (GW), byte write enable (BWE), and individual BW1–BW4 signals for 9-bit byte lanes. Power management includes asynchronous ZZ sleep mode (≤70 µA) and CMOS standby (≤70 mA), with separate VDD (3.3 V) and VDDQ (2.5 V) supplies enabling I/O voltage translation.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT DSC-5311/09 Rev. 6.42, Figure 2 (256K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 71V67602S133PFGI uniquely delivers 2.5 V I/O compatibility, ZZ sleep mode, and configurable linear/interleaved burst - critical for power-constrained, cache-coherent, or mixed-voltage embedded systems.

Availability

71V67602S133PFGI is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data logging, medical imaging frame buffering, and high-speed cache memory applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67602S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V67602S133PFGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for cache-coherent, burst-oriented systems requiring deterministic latency, low-power sleep, and flexible I/O voltage scaling.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67602S133PFGI?

The 71V67602S133PFGI is rated for 133 MHz operation with a guaranteed clock-to-valid-data access time (tCD) of 4.2 ns. This specification is validated across the full industrial temperature range (–40°C to +85°C) and applies to the 256K × 36 configuration in the 100-pin TQFP package. The device also supports 150 MHz (3.8 ns) and 166 MHz (3.5 ns) variants, but the 71V67602S133PFGI is specifically characterized and screened for 133 MHz performance.

Does the 71V67602S133PFGI support both linear and interleaved burst modes?

Yes, the 71V67602S133PFGI supports both linear and interleaved burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the internal burst counter advances in linear order (00→01→10→11); when LBO is HIGH, it follows interleaved order (00→01→11→10). This feature is explicitly documented in the Interleaved and Linear Burst Sequence Tables (DSC-5311/09, Tables 14 and 15) and requires LBO to remain static during device operation.

What are the power supply requirements for the 71V67602S133PFGI?

The 71V67602S133PFGI requires two independent supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V ±5% for I/O circuitry. This dual-supply architecture enables direct interfacing with 2.5 V FPGAs or ASICs while maintaining 3.3 V core performance. Decoupling capacitors must be placed per JEDEC TQFP layout guidelines, and no power sequencing is required - however, no I/O pin voltage may exceed VDDQ during ramp-up.

How does the ZZ (Sleep Mode) pin function on the 71V67602S133PFGI?

The ZZ pin on the 71V67602S133PFGI is an asynchronous, high-active input that places the device into full sleep mode, reducing supply current to ≤70 µA while retaining memory contents. When ZZ is HIGH, the internal clock is gated and all outputs go high-impedance. Recovery time (tZZR) is 100 ns, and the device must be deselected before entering sleep mode. ZZ is internally pulled to VSS if left unconnected, so external pull-down is recommended for active-low default behavior.

Is the 71V67602S133PFGI pin-compatible with other members of the IDT71V676xx family?

The 71V67602S133PFGI shares the same 100-pin TQFP footprint and pinout with other speed grades (e.g., 71V67602S150PFGI, 71V67602S166PFGI) and the 512K×18 variant (71V67802), but pin functions differ slightly in 512K×18 mode due to address pin remapping (e.g., A18 used, A17/A16 repurposed). For 256K×36 operation - the primary configuration of the 71V67602S133PFGI - pin compatibility is maintained across speed grades within the same package.