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Renesas 71V67602S133PFGI8
- Part No.:
- 71V67602S133PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67602S133PFGI8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,244
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Product details
Overview
71V67602S133PFGI8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 133MHz clock operation, 4.2ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write with global and byte-level write control-used in high-speed cache and buffer subsystems of telecom line cards and network processors.
For engineers reviewing the 71V67602S133PFGI8 datasheet, 71V67602S133PFGI8 pinout, 71V67602S133PFGI8 application, or 71V67602S133PFGI8 equivalent, key selection criteria include burst-mode timing compliance, VDDQ = 2.5V I/O interface compatibility, single-cycle deselect capability, and industrial-temperature support (–40°C to +85°C) for embedded infrastructure systems.
Technical Context
The 71V67602S133PFGI8 implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV low and selects sequence order (linear or interleaved) via static LBO input-enabling four consecutive data words per address cycle without external address generation.
Write operations are controlled synchronously through GW (global), BWE (byte enable gate), and BW1–BW4 (individual 9-bit byte selects), with OE remaining asynchronous for output tri-state control. Sleep mode is entered asynchronously via ZZ high, reducing supply current to ≤70mA while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9-Mbit); supports 512K × 18-bit configuration via pin strapping |
| Clock Frequency | 133MHz max; enables 7.5ns clock cycle time for deterministic timing in synchronous bus interfaces |
| Access Time | 4.2ns clock-to-valid-data (tCD); ensures pipelined output meets setup/hold margins at full speed |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 2.5V ±5% (I/O); separates logic and interface power domains |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for base station and industrial controller deployment |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin; eliminates external address sequencing logic |
| Power-Down Current | ≤70mA in ISB2 (clock running standby) and ≤70mA in IZZ (full sleep); critical for thermal management |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant (PFGI8 suffix). Pin 1 marked by dot; pins A0–A18, I/O0–I/O31, I/OP1–I/OP4, and control signals fully mapped per TQFP layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; define 256K-word address space |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing predictability |
| CLK | Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| CE, CS0, CS1 | Chip Enable/Select | Three-input decode (CE low, CS0 high, CS1 low) enables device selection in multi-SRAM systems |
| GW, BWE, BW1–BW4 | Write Control | GW writes all 36 bits; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| LBO | Burst Order Select | Asynchronous static input: LBO = low → linear burst; LBO = high → interleaved burst |
| ZZ | Sleep Mode | Asynchronous high-active input; gates internal CLK and reduces current to sleep-mode level |
| OE | Output Enable | Asynchronous control; drives I/O pins to high-Z when high, enabling bus sharing |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data available one clock cycle after address latch; enables continuous burst throughput without wait states |
| Single-Cycle Deselect | Device enters high-impedance state within one CLK cycle upon CE/CS deassertion-critical for bus arbitration |
| Self-Timed Write Cycle | Internal write timing determined by GW/BWx sampling at CLK edge; eliminates external write pulse generation |
| 2.5V I/O Interface | VDDQ = 2.5V supports interoperability with 2.5V logic families while core runs at 3.3V for performance/power balance |
| Industrial Temperature Range | Rated –40°C to +85°C with full AC/DC specifications guaranteed-suitable for uncontrolled ambient deployments |
Applications
| Telecom Line Card Buffer | Network Processor Cache |
|---|---|
Use Scenario: High-bandwidth packet buffering between SerDes PHY and packet classification engine in 10G line cards. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing 4-word pipelined reads/writes aligned to 133MHz system clock. Use Value: 4.2ns tCD and single-cycle deselect minimize latency jitter and enable deterministic packet queuing. |
Use Scenario: Instruction/data cache for MIPS- or ARM-based network processors handling deep packet inspection. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM interfacing directly to processor's synchronous bus with pipelined outputs. Use Value: Linear/interleaved burst modes match processor prefetch patterns, improving cache hit efficiency by >15% vs. non-burst SRAM. |
| Industrial PLC Data Log | Radar Signal Processing Buffer |
Use Scenario: Real-time logging of sensor inputs and actuator commands in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing timestamped I/O snapshots with guaranteed data retention during brownouts. Use Value: ZZ sleep mode draws ≤70mA at +85°C, enabling passive cooling and extended runtime on backup power. |
Use Scenario: Intermediate storage for ADC samples in phased-array radar front-ends requiring deterministic read/write timing. IC Role / Device Role / Timing Role: Synchronous SRAM buffering digitized RF samples prior to FFT processing; operates at 133MHz with precise tCD. Use Value: 2.5V I/O voltage matches ADC/DAC interface standards, eliminating level-shifter components and signal integrity risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133AXC | 256K × 36, 133MHz, 3.3V core, but uses 3.3V I/O (no VDDQ separation); no LBO-controlled burst order selection | Requires level-shifting for 2.5V logic interfaces; burst sequence fixed to interleaved only | Select when 3.3V I/O compatibility is required and burst flexibility is not needed |
| AS7C3256B-133JCIN | 256K × 36, 133MHz, 3.3V core, 2.5V I/O, but lacks ADV/LBO burst control and pipelined outputs | No burst addressing or pipelining-requires external address sequencer and adds 1-cycle latency per word | Select for cost-sensitive designs where burst performance is secondary to component count reduction |
Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 71V67602S133PFGI8 uniquely delivers 2.5V I/O compatibility *with* configurable linear/interleaved burst and pipelined outputs-enabling lower system latency and reduced FPGA glue logic in high-throughput infrastructure designs.
Availability
71V67602S133PFGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67602S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF power solutions for communications and computing markets.
The IDT71V67602 product line was designed for high-speed synchronous buffering in network equipment and embedded controllers-emphasizing burst efficiency, low-latency pipelining, and industrial reliability.
FAQ
What is the maximum supported clock frequency for the 71V67602S133PFGI8?
The 71V67602S133PFGI8 is rated for 133MHz operation with a minimum clock cycle time (tCYC) of 7.5ns. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and under specified VDD/VDDQ tolerances. Higher frequencies (e.g., 150MHz or 166MHz) apply only to other variants in the IDT71V676xx family-not the 71V67602S133PFGI8.
Does the 71V67602S133PFGI8 support both linear and interleaved burst modes?
Yes, the 71V67602S133PFGI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven low, the device executes linear burst sequences; when high, it uses interleaved ordering. This selection is static and must remain stable during operation-LBO is not sampled dynamically during bursts.
What is the function of the ZZ pin on the 71V67602S133PFGI8?
The ZZ pin on the 71V67602S133PFGI8 is an asynchronous high-active sleep mode input. When asserted high, it internally gates the CLK signal and reduces supply current to ≤70mA (IZZ), while maintaining full data retention. Recovery requires tZZR ≥ 100ns after ZZ returns low before valid accesses resume.
How many data bits does the 71V67602S133PFGI8 provide, and how are they organized?
The 71V67602S133PFGI8 provides 36 data bits: 32 primary I/O lines (I/O0–I/O31) plus 4 parity bits (I/OP1–I/OP4). It is organized as 256K × 36, yielding 9 Mbits total. The same die also supports 512K × 18 configuration via pin strapping-verified in the functional description and pin configurations for both TQFP and BGA packages.
Is the 71V67602S133PFGI8 compatible with 2.5V-only I/O interfaces?
Yes-the 71V67602S133PFGI8 uses dedicated VDDQ = 2.5V ±5% for all I/O buffers, while VDD = 3.3V ±5% powers the core logic. This dual-supply architecture ensures direct compatibility with 2.5V logic families without level shifters, and is explicitly confirmed in DC operating conditions, pin definitions, and package capacitance tables.
71V67602S133PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67602S133PFGI8 FAQ
1.How can I place an order for 71V67602S133PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67602S133PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67602S133PFGI8 reliable?
The price and inventory of 71V67602S133PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S133PFGI8 is usually 5 days.
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Once your 71V67602S133PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67602S133PFGI8?
For technical support, including 71V67602S133PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S133PFGI8 requirements.
6.How does Aetrix verify that 71V67602S133PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67602S133PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S133PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V67602S133PFGI8?
All 71V67602S133PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S133PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67602S133PFGI8 part is unused and in its original packaging.
Return procedure for 71V67602S133PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67602S133PFGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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