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Renesas 71V67602S150BGG

Name: 71V67602S150BGG
Brand: Renesas
SKU: 71V67602S150BGG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67602S150BGG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67602S150BGG.pdf

Description:: IC SRAM 9MBIT PAR 150MHZ 119PBGA

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Product details

Overview

71V67602S150BGG from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O supply, and 150MHz clock operation (3.8ns access time). It supports linear/interleaved burst modes via LBO pin, self-timed write with global/byte write enables, and single-cycle deselect. Used in high-speed cache and buffer subsystems for network processors and telecom line cards.

For engineers reviewing the 71V67602S150BGG datasheet, 71V67602S150BGG pinout, 71V67602S150BGG application, or 71V67602S150BGG equivalent, key selection criteria include burst-mode timing compliance, VDD/VDDQ dual-supply sequencing, ZZ sleep mode current (≤70mA), and TQFP-100 package compatibility with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V67602S150BGG implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state, enabling four consecutive data words per address cycle.

Write operations are fully synchronous and support multiple configurations: global write (GW), byte write enable (BWE) gating BW1–BW4, and individual byte writes (BW1–BW4 controlling 9-bit I/O groups). Output drivers are registered, providing pipelined data with tCD = 3.8ns (150MHz) and single-cycle deselect capability.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9,175,040 bits); supports 512K × 18-bit configuration via address mapping
Clock Frequency / Access Time	150MHz max clock (tCYC = 6.7ns); 3.8ns clock-to-data (tCD) for pipelined read output
Supply Voltages	VDD = 3.3V ±5% (core logic); VDDQ = 2.5V ±5% (I/O interface); independent power domains
Operating Temperature	Industrial grade: –40°C to +85°C; validated across full range for timing and data retention
Power Consumption	IDD = 260mA (150MHz, industrial); ISB1 = 70mA (standby, deselected); IZZ = 70mA (full sleep, ZZ HIGH)
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst sequence; ADV pin synchronously advances counter
Package	JEDEC-standard 100-pin TQFP (14mm × 20mm); also available in 119-ball BGA and 165-fBGA

Pinout & Package

71V67602S150BGG is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-145AC, 14mm × 20mm body, 0.5mm lead pitch. Pin 1 is located at bottom-left corner (marking dot adjacent), with pins numbered counter-clockwise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K×36 mode
CE, CS0, CS1	Chip Enable / Selects	Three-input chip select logic: CE (active LOW), CS0 (active HIGH), CS1 (active LOW); all required for device enable
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BW1–BW4; BW1–BW4 each control one 9-bit I/O byte (BW3/BW4 not used in 512K×18 mode)
CLK, ADV, ADSP, ADSC	Timing & Burst Control	CLK drives all registers; ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus: 32 data + 4 parity bits; registered input/output paths aligned to CLK rising edge
OE, ZZ, LBO	Functional Control	OE (asynchronous output enable); ZZ (asynchronous sleep mode, gates CLK internally); LBO (static burst order select, no runtime change)
VDD, VDDQ, VSS	Power & Ground	VDD (3.3V core), VDDQ (2.5V I/O), VSS (common ground); separate VDD/VDDQ decoupling required per JEDEC layout guidelines

Key Features

Feature	Design Value
Pipelined Burst Outputs	Four consecutive data words delivered on four successive CLK edges after single address; first word delayed by one cycle for timing margin
Self-Timed Write Cycle	Internal write timing determined dynamically per cycle-no external wait-state generation needed for GW or byte-write operations
Dual-Supply I/O Interface	VDDQ = 2.5V enables interoperability with 2.5V logic families while maintaining 3.3V core for speed/power optimization
Single-Cycle Deselect	Device transitions from active read/write to high-Z output state within one CLK cycle upon CE/CS deassertion
Low-Power Sleep Mode	ZZ HIGH reduces ICC to ≤70mA (industrial) with guaranteed data retention; internal clock gating eliminates dynamic power
Configurable Burst Order	LBO pin statically selects linear (LBO = LOW) or interleaved (LBO = HIGH) address sequence-no firmware overhead

Applications

Network Processor Cache	Telecom Line Card Buffer
Use Scenario: High-bandwidth packet buffering between SERDES PHY and network processor ASIC in 10Gbps line cards. IC Role / Device Role / Timing Role: Synchronous SRAM serving as low-latency, burst-capable instruction/data cache with pipelined reads and deterministic write timing. Use Value: 150MHz clock rate and 3.8ns tCD enable sub-7ns effective read latency; single-cycle deselect prevents bus contention during context switches.	Use Scenario: Frame assembly/disassembly buffer in multi-service access gateways requiring burst-aligned data transfer to DSPs. IC Role / Device Role / Timing Role: 36-bit-wide synchronous memory supporting interleaved burst reads for efficient DMA transfers to TI C6000-series DSPs. Use Value: LBO-selectable burst order matches DSP memory controller expectations; VDDQ = 2.5V ensures voltage compatibility with DSP I/O banks.
Industrial PLC Motion Controller	Radar Signal Processing FIFO
Use Scenario: Real-time motion profile storage and update in servo drive controllers operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-grade SRAM holding trajectory tables and axis status registers, accessed via FPGA-based controller with burst addressing. Use Value: Guaranteed operation over full industrial temperature range; ZZ sleep mode reduces system standby power by >85% during idle intervals.	Use Scenario: High-speed ADC sample buffering in phased-array radar front-ends requiring deterministic burst reads for FFT preprocessing. IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM acting as acquisition FIFO between 125MSPS ADC and FPGA-based digital downconverter. Use Value: tCDC = 1.5ns minimizes data skew across 36-bit bus; 100-pin TQFP allows dense PCB layout with controlled impedance routing.

Network Processor Cache

Telecom Line Card Buffer

Use Scenario: High-bandwidth packet buffering between SERDES PHY and network processor ASIC in 10Gbps line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as low-latency, burst-capable instruction/data cache with pipelined reads and deterministic write timing.

Use Value: 150MHz clock rate and 3.8ns tCD enable sub-7ns effective read latency; single-cycle deselect prevents bus contention during context switches.

Use Scenario: Frame assembly/disassembly buffer in multi-service access gateways requiring burst-aligned data transfer to DSPs.

IC Role / Device Role / Timing Role: 36-bit-wide synchronous memory supporting interleaved burst reads for efficient DMA transfers to TI C6000-series DSPs.

Use Value: LBO-selectable burst order matches DSP memory controller expectations; VDDQ = 2.5V ensures voltage compatibility with DSP I/O banks.

Industrial PLC Motion Controller

Radar Signal Processing FIFO

Use Scenario: Real-time motion profile storage and update in servo drive controllers operating across –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Industrial-grade SRAM holding trajectory tables and axis status registers, accessed via FPGA-based controller with burst addressing.

Use Value: Guaranteed operation over full industrial temperature range; ZZ sleep mode reduces system standby power by >85% during idle intervals.

Use Scenario: High-speed ADC sample buffering in phased-array radar front-ends requiring deterministic burst reads for FFT preprocessing.

IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM acting as acquisition FIFO between 125MSPS ADC and FPGA-based digital downconverter.

Use Value: tCDC = 1.5ns minimizes data skew across 36-bit bus; 100-pin TQFP allows dense PCB layout with controlled impedance routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV18-167BZI	512K × 18-bit, 167MHz, 3.3V core / 2.5V I/O, same TQFP-100 package but different pinout (no ADSC/ADSP)	Designed for simpler address-control interfaces without cache coherency signals; lacks ADSC/ADSP burst synchronization	Select when system uses only ADSP-style addressing and requires higher density (512K×18) at faster speed-requires PCB redesign due to pinout mismatch
AS7C362000B-15TIN	256K × 36-bit, 150MHz, 3.3V-only supply (no VDDQ separation), TQFP-100 with compatible pinout for A0–A18, I/O, CLK, CE, OE, GW	No burst mode or ADV/LBO support; asynchronous OE; no sleep mode (ZZ); lower I/O drive strength	Use where burst functionality is unnecessary and cost-sensitive designs require drop-in replacement for basic synchronous SRAM functions-no timing or feature parity

Compared with CY7C1362BV18-167BZI and AS7C362000B-15TIN, the 71V67602S150BGG uniquely delivers cache-aware synchronous control (ADSC/ADSP), configurable burst ordering (LBO), and industrial-temperature sleep mode (ZZ), making it irreplaceable in high-performance embedded systems requiring deterministic low-latency memory access.

Availability

71V67602S150BGG is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, industrial PLC motion controller, and radar signal processing FIFO applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67602S150BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions.

The 71V67602S150BGG belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in networking, telecommunications, and industrial real-time control equipment.

FAQ

What is the maximum clock frequency supported by the 71V67602S150BGG?

The 71V67602S150BGG is rated for 150MHz operation (tCYC = 6.7ns) under industrial conditions (–40°C to +85°C) with VDD = 3.3V ±5% and VDDQ = 2.5V ±5%. At this frequency, its clock-to-data delay (tCD) is guaranteed at 3.8ns. The device also supports 166MHz (3.5ns tCD) in commercial temperature range only.

Does the 71V67602S150BGG support both linear and interleaved burst modes?

Yes, the 71V67602S150BGG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device uses linear addressing (00→01→10→11); when LBO = HIGH, it uses interleaved addressing (00→01→11→10). LBO is a static input and must remain stable during operation.

How does the ZZ (Sleep Mode) pin function on the 71V67602S150BGG?

The ZZ pin on the 71V67602S150BGG is an asynchronous input that places the device into full sleep mode when driven HIGH. In this state, internal clock distribution is gated, reducing supply current to ≤70mA (industrial) while guaranteeing data retention. The device resumes normal operation after tZZR = 100ns once ZZ returns LOW.

What are the voltage requirements for VDD and VDDQ on the 71V67602S150BGG?

The 71V67602S150BGG requires VDD = 3.3V ±5% (3.135V to 3.465V) for core logic and VDDQ = 2.5V ±5% (2.375V to 2.625V) for I/O buffers. These supplies must be independently decoupled; VDDQ may ramp before, after, or simultaneously with VDD, but no I/O pin voltage may exceed VDDQ during power-up.

Is the 71V67602S150BGG pin-compatible with other devices in the IDT71V676xx family?

The 71V67602S150BGG shares identical pinout and package (100-pin TQFP) with other members of the IDT71V676xx family, including the 71V67601 and 71V67603, differing only in speed grade and internal configuration. However, it is not pin-compatible with the IDT71V67802 due to differences in BW3/BW4 assignment and NC pin placement.

71V67602S150BGG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67602S150BGG FAQ

1.How can I place an order for 71V67602S150BGG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67602S150BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V67602S150BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S150BGG is usually 5 days.

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Once your 71V67602S150BGG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67602S150BGG?

For technical support, including 71V67602S150BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S150BGG requirements.

6.How does Aetrix verify that 71V67602S150BGG is sourced from the original manufacturer or authorized distributors?

All 71V67602S150BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S150BGG meets industry standards.

7.What is the process for return or replacement of 71V67602S150BGG?

All 71V67602S150BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S150BGG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67602S150BGG part is unused and in its original packaging.

Return procedure for 71V67602S150BGG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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