Renesas 71V67602S150BGG8

Overview

71V67602S150BGG8 from Integrated Device Technology (IDT) is a 256K × 36-bit synchronous SRAM with pipelined outputs, 150 MHz clock frequency, 3.3 V core supply, and 2.5 V I/O supply. It supports linear/interleaved burst modes via LBO pin, features self-timed write with global/byte write enables, and delivers 3.8 ns clock-to-data access time. It is used in high-speed networking line cards requiring deterministic burst data transfers.

For engineers reviewing the 71V67602S150BGG8 datasheet, 71V67602S150BGG8 pinout, 71V67602S150BGG8 application, or 71V67602S150BGG8 equivalent, key selection criteria include synchronous burst timing compliance, 100-pin TQFP mechanical fit, 2.5 V I/O voltage tolerance, and single-cycle deselect capability for cache-coherent bus interfaces.

Technical Context

The 71V67602S150BGG8 implements a synchronous pipelined architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state - no runtime reconfiguration permitted.

Burst operation delivers four consecutive 36-bit words per address cycle: first output is pipelined one clock cycle, subsequent outputs appear on the next three rising clock edges. Write cycles are self-timed and support global (GW), byte-level (BWE + BW1–BW4), or mixed granularity - all gated synchronously to CLK with setup/hold timing referenced to that edge.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout matches IDT71V67602 functional variant in 256K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-167AXC and AS7C3256A-15JC, the 71V67602S150BGG8 uniquely combines 150 MHz performance, 100-pin TQFP package, 2.5 V I/O interface, and industrial temperature range - enabling drop-in replacement in legacy designs without layout or voltage rail changes.

Availability

71V67602S150BGG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-grade performance.

Supply support for 71V67602S150BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs before its acquisition by Renesas in 2019. IDT's synchronous SRAM portfolio targeted high-performance computing and communications systems.

The IDT71V67602 product line was designed for applications demanding deterministic burst bandwidth, low-latency pipelined access, and robust industrial operation - particularly in network processors, baseband units, and real-time control subsystems.

FAQ

What is the maximum clock frequency supported by the 71V67602S150BGG8?

The 71V67602S150BGG8 is rated for 150 MHz operation, corresponding to a minimum clock cycle time (tCYC) of 6.7 ns. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and under specified 3.3 V ±5% VDD and 2.5 V ±5% VDDQ supply conditions. Performance beyond 150 MHz is not characterized or warranted.

Does the 71V67602S150BGG8 support both linear and interleaved burst modes?

Yes, the 71V67602S150BGG8 supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device uses linear burst order; when driven HIGH, it uses interleaved order. LBO is a static input and must not change state during active operation.

What is the function of the ADV pin on the 71V67602S150BGG8?

The ADV (Burst Address Advance) pin on the 71V67602S150BGG8 is an active-LOW synchronous input that controls advancement of the internal burst address counter. When ADV is LOW, the counter increments to deliver the next sequential burst address; when ADV is HIGH, burst progression halts and the current address is repeated - enabling burst suspension without terminating the cycle.

Can the 71V67602S150BGG8 operate with only a 3.3 V supply, or is the 2.5 V VDDQ rail mandatory?

The 2.5 V VDDQ rail is mandatory for correct operation of the 71V67602S150BGG8. The device uses separate 3.3 V (VDD) for core logic and 2.5 V (VDDQ) for I/O buffers. Operating with VDDQ tied to 3.3 V violates absolute maximum ratings and risks damage or undefined behavior. Both supplies must be present and within ±5% tolerance.

How does the ZZ pin affect power consumption in the 71V67602S150BGG8?

Asserting ZZ HIGH places the 71V67602S150BGG8 into full sleep mode, gating the internal clock and reducing supply current to 70 mA (IZZ) - a >70% reduction versus active operation (260 mA IDD at 150 MHz). Data retention is guaranteed, and recovery time (tZZR) is 100 ns, allowing rapid wake-up for burst-intensive workloads.