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Renesas 71V67602S150PFG
- Part No.:
- 71V67602S150PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67602S150PFG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,325
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Product details
Overview
71V67602S150PFG from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O supply, and 150MHz clock operation (3.8ns access time). It supports linear/interleaved burst modes via LBO pin, self-timed write with global/byte write controls, and single-cycle deselect. Used in high-speed networking buffers and cache memory subsystems requiring deterministic timing.
For engineers reviewing the 71V67602S150PFG datasheet, 71V67602S150PFG pinout, 71V67602S150PFG application, or 71V67602S150PFG equivalent, key selection criteria include burst counter behavior, ZZ sleep mode current (≤70mA), VDDQ=2.5V I/O compatibility, TQFP-100 package footprint, and 133–166MHz frequency scalability across temperature grades.
Technical Context
The 71V67602S150PFG implements a synchronous dual-register architecture: address latching on ADSP/ADSC-triggered rising CLK edges, and pipelined data output with one-cycle latency. Burst addressing uses an internal binary counter advanced by ADV, with sequence order determined statically by LBO level (HIGH = interleaved, LOW = linear).
Write control combines synchronous inputs GW (global), BWE (byte enable gate), and BW1–BW4 (per-byte masks), enabling selective 9-bit writes within the 36-bit data bus. Sleep mode is entered asynchronously via ZZ HIGH, disabling internal clock distribution while retaining data at ≤70mA ISB2 current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9-Mbit); supports 512K × 18-bit configuration via address mapping |
| Clock Frequency | 150MHz max - enables 6.7ns clock cycle time for deterministic system timing |
| Access Time | 3.8ns - guaranteed valid data output after CLK high for read cycles at 150MHz |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 2.5V ±5% (I/O) - requires dual-rail power design |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control |
| Power Consumption | IDD = 325mA max (150MHz, industrial), ISB2 = 175mA (clock running, deselected) |
| Package | 100-pin TQFP (14mm × 20mm, JEDEC standard) - surface-mount compatible with IPC-7351B footprint |
Pinout & Package
71V67602S150PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm lead pitch. Pin 1 marked by corner cut; pins arranged in four 25-pin sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous 19-bit address bus; latched on rising CLK edge when ADSP/ADSC active |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; registered input/output paths synchronized to CLK |
| CLK | Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| CE, CS0, CS1 | Chip Enable/Select | Three-input chip select logic (CE low + CS0 high + CS1 low) enables device operation |
| GW, BWE, BW1–BW4 | Write Control | GW initiates full 36-bit write; BWE gates BWx; BW1–BW4 each enable one 9-bit byte |
| ADV, LBO, ZZ | Burst & Power Control | ADV advances burst counter; LBO selects linear/interleaved sequence; ZZ enables sleep mode |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | One-cycle output latency ensures predictable data availability on consecutive CLK edges during burst reads |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; reduces controller overhead |
| Linear/Interleaved Burst Mode | LBO pin statically configures burst address sequence-critical for cache line alignment in CPU interfaces |
| Single-Cycle Deselect | Device enters high-Z state within one CLK cycle upon CE/CS deassertion-minimizes bus contention |
| Asynchronous Sleep Mode (ZZ) | Reduces supply current to ≤70mA while retaining data-enables low-power idle states in packet processors |
Applications
| Networking Packet Buffer | Industrial PLC Memory Cache |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with MAC controllers and DMA engines. Use Value: 150MHz burst reads deliver four 36-bit words per address cycle, matching Gigabit+ throughput requirements without wait states. | Use Scenario: Holding real-time I/O status tables and ladder logic variables in programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic scan execution with strict jitter budgets. Use Value: Single-cycle deselect and pipelined outputs eliminate bus arbitration delays, ensuring sub-microsecond response to field I/O changes. |
| Telecom Baseband Processor Cache | Avionics Data Acquisition Buffer |
Use Scenario: Acting as Level 2 instruction/data cache for multi-core DSPs in wireless baseband units. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to cached FIR filter coefficients and channel state vectors. Use Value: 2.5V I/O voltage matches DSP core I/O standards; 133–166MHz scalability supports multiple processing tiers. | Use Scenario: Capturing high-resolution sensor telemetry (e.g., inertial measurement units) in flight data recorders. IC Role / Device Role / Timing Role: Radiation-tolerant buffer storing time-stamped samples prior to ARINC-429 transmission. Use Value: Industrial temperature range (–40°C to +85°C) and ZZ sleep mode ensure reliable operation across extreme environmental profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV18-167AXC | 512K × 18-bit, 167MHz, 3.3V core, 1.8V I/O - different data width and I/O voltage | Targeted at DDR2-compatible systems requiring lower I/O voltage; not pin-compatible | Select when 18-bit bus width and 1.8V I/O interface are required; verify burst counter compatibility |
| AS7C361024B-15JIN | 1M × 36-bit, 150MHz, 3.3V only (no separate VDDQ), 119-ball BGA - higher density, different package | Used in space-constrained designs where TQFP-100 layout is impractical | Choose for higher capacity needs and BGA assembly capability; rework required for footprint change |
Compared with CY7C1371BV18-167AXC and AS7C361024B-15JIN, the 71V67602S150PFG uniquely provides 256K × 36 organization with dedicated 2.5V I/O rails and TQFP-100 packaging-making it optimal for legacy industrial control upgrades requiring drop-in mechanical compatibility and precise voltage segregation.
Availability
71V67602S150PFG is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC memory caches, and telecom baseband processor caches requiring stable component supply across extended product lifecycles.
Supply support for 71V67602S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.
The IDT71V67602 product line delivers high-speed synchronous SRAMs optimized for deterministic latency, burst efficiency, and low-power sleep modes in mission-critical embedded systems.
FAQ
What is the maximum clock frequency supported by the 71V67602S150PFG?
The 71V67602S150PFG is rated for 150MHz operation with a 6.7ns clock cycle time. It also supports 133MHz (7.5ns) and 166MHz (6.0ns) variants within the same family, but the 'S150' suffix confirms this specific device is characterized and guaranteed for 150MHz maximum frequency across the industrial temperature range.
Does the 71V67602S150PFG require external termination resistors on its I/O lines?
No, the 71V67602S150PFG does not integrate on-die termination. External series or parallel termination may be needed depending on PCB trace length and signal integrity requirements, especially at 150MHz. The datasheet specifies AC test load as 50Ω to VDDQ/2, indicating typical use with controlled-impedance routing.
How does the LBO pin affect burst addressing in the 71V67602S150PFG?
The LBO pin selects burst address order: when pulled LOW, the 71V67602S150PFG uses linear burst (00→01→10→11); when HIGH, it uses interleaved burst (00→01→11→10). This setting must remain static during operation and determines how the internal counter increments A0/A1 for four-word bursts.
Can the 71V67602S150PFG operate with only VDD applied, leaving VDDQ unconnected?
No. The 71V67602S150PFG requires both VDD = 3.3V ±5% (core) and VDDQ = 2.5V ±5% (I/O) supplies to function. Leaving VDDQ unconnected will result in undefined I/O behavior and potential damage. The two supplies must be ramped independently but within specified sequencing guidelines.
What is the purpose of the ZZ pin on the 71V67602S150PFG?
ZZ is an asynchronous sleep mode input. When driven HIGH, the 71V67602S150PFG gates its internal clock and reduces supply current to ≤70mA (industrial grade) while retaining memory contents. Data retention is guaranteed during sleep, making it suitable for low-power idle states in always-on systems.
71V67602S150PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67602S150PFG FAQ
1.How can I place an order for 71V67602S150PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67602S150PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67602S150PFG reliable?
The price and inventory of 71V67602S150PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S150PFG is usually 5 days.
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Once your 71V67602S150PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67602S150PFG?
For technical support, including 71V67602S150PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S150PFG requirements.
6.How does Aetrix verify that 71V67602S150PFG is sourced from the original manufacturer or authorized distributors?
All 71V67602S150PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S150PFG meets industry standards.
7.What is the process for return or replacement of 71V67602S150PFG?
All 71V67602S150PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S150PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67602S150PFG part is unused and in its original packaging.
Return procedure for 71V67602S150PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67602S150PFG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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