Renesas 71V67602S150PFG8

Overview

71V67602S150PFG8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O supply, and 150MHz clock operation (3.8ns access time). It supports linear/interleaved burst modes via LBO pin, features self-timed write with global/byte write enables, and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67602S150PFG8 datasheet, 71V67602S150PFG8 pinout, 71V67602S150PFG8 application, or 71V67602S150PFG8 equivalent, key selection criteria include burst-mode timing compliance, 2.5V I/O voltage tolerance, single-cycle deselect capability, ZZ sleep mode current (≤70mA), and TQFP-100 package compatibility with JEDEC MO-145.

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO level - no runtime reconfiguration permitted. The device uses separate VDD (3.3V core) and VDDQ (2.5V I/O) supplies to decouple logic and interface power domains.

Write operations are controlled by synchronous GW (global) or BWE/BWx (byte-select) inputs, with OE remaining asynchronous for output gating. Pipelined read outputs deliver first data one clock cycle after address latch, followed by three burst words on subsequent edges - all synchronized to CLK without external handshaking.

Key Specifications

Pinout & Package

71V67602S150PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm, compliant with MO-145. Pin 14 (VDD/NC) may be tied to VDD or left unconnected; Pin 64 (ZZ) must be actively driven HIGH for sleep mode or pulled LOW for active operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-166AXC and AS7C3256B-15JIN, the 71V67602S150PFG8 uniquely delivers 150MHz pipelined burst operation in a standard TQFP-100 package with dual-supply I/O and configurable burst order - enabling higher determinism in real-time embedded systems without layout changes.

Availability

71V67602S150PFG8 is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, industrial PLCs, and radar signal processing requiring stable component supply across extended lifecycle commitments.

Supply support for 71V67602S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The IDT71V67602 product line delivers high-speed synchronous SRAMs optimized for deterministic burst access in packet-processing and real-time control systems - emphasizing pipelined timing, low-power sleep modes, and flexible I/O voltage support.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67602S150PFG8?

The 71V67602S150PFG8 is rated for 150MHz operation with a guaranteed clock-to-data access time (tCD) of 3.8ns under industrial temperature conditions. This specification assumes VDD = 3.3V ±5%, VDDQ = 2.5V ±5%, and proper signal integrity per AC test conditions in datasheet DSC-5311/09. The 71V67602S150PFG8 does not support 166MHz operation - that speed grade applies only to the -166 variant.

How does the LBO pin affect burst addressing behavior in the 71V67602S150PFG8?

The LBO pin on the 71V67602S150PFG8 statically selects burst address order: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). This setting must be fixed before device operation begins and cannot be changed dynamically. The 71V67602S150PFG8 uses A0/A1 to generate the four burst addresses internally - no external address incrementing is required.

Can the 71V67602S150PFG8 operate with only a 3.3V supply, or is the 2.5V VDDQ rail mandatory?

The 2.5V VDDQ supply is mandatory for correct operation of the 71V67602S150PFG8. VDD powers the core logic (3.3V), while VDDQ independently powers the I/O buffers. Operating VDDQ outside 2.375V–2.625V violates DC specifications and risks data corruption or excessive I/O leakage. The 71V67602S150PFG8 is not compatible with 3.3V-only I/O interfaces.

What is the function of the ZZ pin, and what current savings does it provide in sleep mode?

The ZZ pin on the 71V67602S150PFG8 enables full sleep mode when driven HIGH, gating the internal clock and reducing supply current to ≤70mA (industrial grade). This represents >80% reduction versus active-mode IDD (325mA @150MHz). Data retention is guaranteed during sleep, and recovery time (tZZR) is 100ns - allowing rapid wake-up for burst-intensive workloads.

Does the 71V67602S150PFG8 support both 256K×36 and 512K×18 configurations, and how is the mode selected?

Yes, the 71V67602S150PFG8 supports both organizations: 256K×36 (default) and 512K×18 (via pin strapping). Configuration is determined by the state of pins BW3/BW4 during power-up - tied LOW for 256K×36, HIGH for 512K×18. The 71V67602S150PFG8 datasheet confirms this mapping in Pin Description Summary Table 1 and Pin Configurations Figures 2–3.