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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67602S150PFGI

Name: 71V67602S150PFGI
Brand: Renesas
SKU: 71V67602S150PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67602S150PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V67602S150PFGI.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V67602S150PFGI from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 150MHz clock operation, 3.8ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write control using GW, BWE, and BW1–BW4 for byte-selective writes. Used in high-speed cache and buffer applications in networking line cards and telecom baseband processors.

For engineers reviewing the 71V67602S150PFGI datasheet, 71V67602S150PFGI pinout, 71V67602S150PFGI application, or 71V67602S150PFGI equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP mechanical compatibility, VDD/VDDQ dual-supply sequencing, single-cycle deselect behavior, and industrial-temperature support (–40°C to +85°C).

Technical Context

The 71V67602S150PFGI implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state - no runtime reconfiguration permitted.

Write operations are fully synchronous and support four distinct modes: global write (GW active), byte write (BWE active + BWx asserted), burst-suspended write (ADV=HIGH), and single-cycle deselect (CE/CS deassertion within one clock). OE remains asynchronous for output enable control independent of clock phase.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9,175,040 bits); supports 512K × 18-bit mode via pin-strapping - same physical device, different addressing mapping.
Clock Frequency	150 MHz maximum; enables 6.7 ns clock cycle time - defines system bus bandwidth ceiling for burst transfers.
Access Time	3.8 ns clock-to-valid-data (tCD); determines minimum latency between address latch and first usable output word.
Supply Voltages	VDD = 3.3 V ±5% (core logic); VDDQ = 2.5 V ±5% (I/O drivers) - mandates separate power domains with controlled ramp sequencing.
Operating Temperature	–40°C to +85°C (industrial grade); validated across full range for data retention, timing margin, and leakage current (ISB2 ≤ 175 mA @ 150 MHz).
Burst Mode	Four-word burst per address; linear or interleaved sequence selected by LBO pin - eliminates external address generation logic in burst-capable controllers.
Power-Down Control	Asynchronous ZZ input gates internal clock and reduces ICC to ≤70 mA (ISB1/IZZ); retains data without refresh during sleep.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; pins A0–A18, I/O0–I/O31, I/OP1–I/OP4, and control signals distributed across four sides with dedicated VDD/VDDQ/VSS banks for noise isolation.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge when ADSP or ADSC active; define 256K-word address space (18-bit) for 36-bit words.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional data bus; registered input/output paths synchronized to CLK; I/OPx are parity bits for error detection in 36-bit mode.
CLK	Clock Input	Primary timing reference; all synchronous operations (address capture, read/write initiation, burst advance) referenced to rising edge.
ADSP / ADSC	Address Status Inputs	Processor- or cache-controller-initiated address load triggers; ADSP gated by CE, ADSC independent - enables dual-bus arbitration.
ADV	Burst Address Advance	Active-LOW signal that increments internal burst counter; held HIGH to suspend burst and repeat current address for multi-cycle writes.
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence: LOW = linear (00→01→10→11), HIGH = interleaved (00→01→11→10) - must be stable during operation.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE enables byte-write mode; BW1–BW4 select individual 9-bit bytes (BW1→I/O0–7+I/OP1, etc.) - supports partial-word updates.
OE	Output Enable	Asynchronous control: LOW enables output drivers; HIGH forces high-impedance - allows bus sharing without clock dependency.
ZZ	Sleep Mode	Asynchronous HIGH input disables internal clock and reduces ICC to ≤70 mA; data retained; requires tZZR ≥ 100 ns recovery before next access.

Key Features

Feature	Design Value
Pipelined Outputs	First output word available one clock cycle after address latch; subsequent burst words aligned to consecutive CLK edges - eliminates wait states in burst reads.
Single-Cycle Deselect	Chip deselection (via CE/CS deassertion) completes within one CLK period - prevents bus contention during rapid chip switching in multi-SRAM systems.
Self-Timed Write Cycle	Internal timing logic terminates write based on GW/BWE/BWx sampling at CLK edge - removes need for external write pulse generation or timing calibration.
Dual-Voltage I/O Interface	VDDQ = 2.5 V enables interface to 2.5 V logic families while core runs at 3.3 V - reduces I/O switching noise and improves signal integrity on mixed-voltage boards.
Industrial Temperature Support	Guaranteed operation from –40°C to +85°C with full AC/DC specs - suitable for base station RF units, industrial PLCs, and transportation control modules.

Applications

Networking Line Card Buffer	Telecom Baseband Processor Cache
Use Scenario: High-throughput packet buffering in 10G Ethernet MAC interfaces requiring low-latency, burst-aligned memory access. IC Role / Device Role / Timing Role: Primary data buffer storing ingress/egress packet payloads; operates as synchronous slave to network processor's burst-address bus. Use Value: 150 MHz clock rate and 3.8 ns tCD enable sustained 5.4 GB/s burst bandwidth (36-bit × 150 MHz), matching 10G line rates without throttling.	Use Scenario: Real-time DSP instruction and coefficient caching in wireless baseband processing units handling LTE/5G modulation stacks. IC Role / Device Role / Timing Role: Low-latency instruction cache feeding dual-core DSP; leverages pipelined outputs to deliver four instructions per address cycle. Use Value: Single-cycle deselect and burst pipelining reduce average instruction fetch latency to ≤1.5 cycles - critical for meeting hard real-time FFT and channel estimation deadlines.
Industrial PLC Motion Control FIFO	Radar Signal Processing Frame Buffer
Use Scenario: Deterministic motion trajectory buffering in CNC controller modules where jitter-free data delivery ensures sub-micron positioning accuracy. IC Role / Device Role / Timing Role: Synchronous FIFO staging encoder feedback and servo command streams; uses ADV-controlled burst suspension for variable-length move segments. Use Value: Asynchronous ZZ sleep mode cuts standby power to ≤70 mA while retaining position data - extends uptime in battery-backed PLC modules.	Use Scenario: High-fidelity ADC sample buffering in phased-array radar front-ends requiring coherent 12-bit, 100+ MSPS frame capture. IC Role / Device Role / Timing Role: Frame memory staging raw IQ samples prior to FPGA-based beamforming; relies on 2.5 V I/O compatibility with ADC/DAC voltage levels. Use Value: VDDQ = 2.5 V ±5% matches typical high-speed ADC output swing, eliminating level-shifter components and associated timing skew.

Networking Line Card Buffer

Telecom Baseband Processor Cache

Use Scenario: High-throughput packet buffering in 10G Ethernet MAC interfaces requiring low-latency, burst-aligned memory access.

IC Role / Device Role / Timing Role: Primary data buffer storing ingress/egress packet payloads; operates as synchronous slave to network processor's burst-address bus.

Use Value: 150 MHz clock rate and 3.8 ns tCD enable sustained 5.4 GB/s burst bandwidth (36-bit × 150 MHz), matching 10G line rates without throttling.

Use Scenario: Real-time DSP instruction and coefficient caching in wireless baseband processing units handling LTE/5G modulation stacks.

IC Role / Device Role / Timing Role: Low-latency instruction cache feeding dual-core DSP; leverages pipelined outputs to deliver four instructions per address cycle.

Use Value: Single-cycle deselect and burst pipelining reduce average instruction fetch latency to ≤1.5 cycles - critical for meeting hard real-time FFT and channel estimation deadlines.

Industrial PLC Motion Control FIFO

Radar Signal Processing Frame Buffer

Use Scenario: Deterministic motion trajectory buffering in CNC controller modules where jitter-free data delivery ensures sub-micron positioning accuracy.

IC Role / Device Role / Timing Role: Synchronous FIFO staging encoder feedback and servo command streams; uses ADV-controlled burst suspension for variable-length move segments.

Use Value: Asynchronous ZZ sleep mode cuts standby power to ≤70 mA while retaining position data - extends uptime in battery-backed PLC modules.

Use Scenario: High-fidelity ADC sample buffering in phased-array radar front-ends requiring coherent 12-bit, 100+ MSPS frame capture.

IC Role / Device Role / Timing Role: Frame memory staging raw IQ samples prior to FPGA-based beamforming; relies on 2.5 V I/O compatibility with ADC/DAC voltage levels.

Use Value: VDDQ = 2.5 V ±5% matches typical high-speed ADC output swing, eliminating level-shifter components and associated timing skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-166AXC	256K × 36, 166 MHz, 3.3 V core, 2.5 V I/O; identical pinout but uses JTAG-compatible test access port (TAP) instead of ADSC/ADSP dual-status interface.	Requires JTAG-aware controller firmware; lacks ADSC-driven cache coherency support - unsuitable for legacy cache subsystems relying on ADSC handshake.	Select when migrating to JTAG-based debug infrastructure and when ADSC/ADSP arbitration is unnecessary.
AS7C33160B-15JIN	256K × 36, 150 MHz, 3.3 V only (no VDDQ separation); 119-ball BGA package; no ZZ sleep mode; supports linear burst only (no LBO).	Eliminates VDDQ rail simplifying power design but increases I/O noise coupling; BGA footprint incompatible with 100-pin TQFP PCB layout.	Select for space-constrained designs accepting trade-offs in power integrity and thermal management for smaller form factor.

Compared with CY7C1371DV33-166AXC and AS7C33160B-15JIN, the 71V67602S150PFGI uniquely supports dual-address-status (ADSP/ADSC) arbitration and configurable burst ordering (LBO), making it irreplaceable in legacy cache-coherent systems requiring precise timing control over burst initiation and suspension.

Availability

71V67602S150PFGI is available at Aetrix Electronics and suitable for networking line cards, telecom baseband processors, industrial PLC motion control modules, and radar signal processing frame buffers requiring stable component supply across extended product lifecycles.

Supply support for 71V67602S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs for communications, computing, and industrial markets.

The IDT71V67602 product line delivers high-speed synchronous SRAMs optimized for burst-oriented cache and buffer applications in telecom infrastructure, enterprise networking, and real-time control systems - emphasizing deterministic timing, low-power sleep, and dual-voltage I/O flexibility.

FAQ

What is the maximum supported clock frequency for the 71V67602S150PFGI?

The 71V67602S150PFGI is rated for 150 MHz operation, corresponding to a 6.7 ns clock cycle time (tCYC). This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) with VDD = 3.3 V ±5% and VDDQ = 2.5 V ±5%. Exceeding 150 MHz may violate setup/hold timing margins and is not supported.

Does the 71V67602S150PFGI support both linear and interleaved burst modes?

Yes, the 71V67602S150PFGI supports both burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device uses linear order (00→01→10→11); when LBO = HIGH, it uses interleaved order (00→01→11→10). LBO is a static input and must remain stable during operation - dynamic switching is not permitted.

How does the 71V67602S150PFGI handle power-down and data retention?

The 71V67602S150PFGI enters low-power sleep mode when ZZ is driven HIGH, reducing supply current to ≤70 mA (IZZ) while retaining all stored data. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid accesses resume. Data retention is guaranteed across the full industrial temperature range without external refresh.

What is the function of the ADV pin on the 71V67602S150PFGI?

The ADV (Burst Address Advance) pin controls burst progression: when ADV = LOW, the internal burst counter increments for each clock cycle, delivering four sequential data words. When ADV = HIGH, burst advancement halts - allowing repeated access to the same address or insertion of non-burst operations mid-sequence without resetting the counter.

Can the 71V67602S150PFGI operate in 512K × 18-bit configuration?

Yes, the 71V67602S150PFGI supports 512K × 18-bit organization through pin-strapping and address remapping - same silicon die, alternate addressing mode. In this mode, A18 becomes an address bit (expanding to 19 bits), and data width reduces to 18 bits (I/O0–I/O17 + I/OP1–I/OP2), verified in the 100-pin TQFP pinout diagrams for 512K × 18.

71V67602S150PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V67602S150PFGI FAQ

1.How can I place an order for 71V67602S150PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67602S150PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67602S150PFGI reliable?

The price and inventory of 71V67602S150PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S150PFGI is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67602S150PFGI transactions.

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71V67602S150PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67602S150PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67602S150PFGI?

For technical support, including 71V67602S150PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S150PFGI requirements.

6.How does Aetrix verify that 71V67602S150PFGI is sourced from the original manufacturer or authorized distributors?

All 71V67602S150PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S150PFGI meets industry standards.

7.What is the process for return or replacement of 71V67602S150PFGI?

All 71V67602S150PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S150PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67602S150PFGI part is unused and in its original packaging.

Return procedure for 71V67602S150PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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