Renesas 71V67602S150PFGI8

Overview

71V67602S150PFGI8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O supply, and 150MHz clock operation (3.8ns access time). It supports linear/interleaved burst modes via LBO pin, features self-timed write with global/byte write enables, and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67602S150PFGI8 datasheet, 71V67602S150PFGI8 pinout, 71V67602S150PFGI8 application, or 71V67602S150PFGI8 equivalent, key selection criteria include burst counter behavior, single-cycle deselect timing, ZZ sleep mode current (≤70mA), and TQFP-100 package compatibility with 14mm × 20mm footprint.

Technical Context

This SRAM integrates address, data, and control registers with a synchronous pipeline architecture. Its burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) via static LBO input - no reconfiguration during operation. All inputs except OE and ZZ are synchronous to CLK, with setup/hold times referenced to rising edge.

The device implements dual power domains: 3.3V core (VDD) for logic and 2.5V I/O (VDDQ) for signal integrity. Write cycles are self-timed using GW, BWE, and BW1–BW4; byte writes disable outputs while global write asserts all 36 bits. Sleep mode (ZZ=HIGH) gates internal clock and reduces supply current to ≤70mA.

Key Specifications

Pinout & Package

71V67602S150PFGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm lead pitch. Pin 14 (VDD/NC) may be tied to VDD or left unconnected; Pin 64 (ZZ) must be actively driven HIGH for sleep mode or pulled LOW for active operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-166AXC and AS7C3256A-15JC, the 71V67602S150PFGI8 uniquely combines industrial temperature support, dual-supply I/O, programmable burst order, and hardware sleep control - making it optimal for telecom infrastructure requiring both performance and power management.

Availability

71V67602S150PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband processor memory, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67602S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The IDT71V67602 product line delivers synchronous SRAMs optimized for burst-oriented, low-latency applications in networking and telecom infrastructure - emphasizing pipelined throughput, power efficiency, and industrial reliability.

FAQ

What is the maximum clock frequency supported by the 71V67602S150PFGI8?

The 71V67602S150PFGI8 is rated for 150MHz operation, corresponding to a 6.7ns minimum clock cycle time (tCYC) and 3.8ns clock-to-data access time (tCD) under industrial conditions. This frequency is guaranteed across the full –40°C to +85°C temperature range with VDD = 3.3V ±5% and VDDQ = 2.5V ±5%. Exceeding 150MHz violates AC specifications and may cause data corruption.

How does the LBO pin affect burst addressing in the 71V67602S150PFGI8?

The LBO pin on the 71V67602S150PFGI8 statically selects burst address order: LBO=LOW enables linear sequence (00→01→10→11), while LBO=HIGH enables interleaved sequence (00→01→11→10). This configuration must be stable before device initialization and cannot change during operation. The selected mode determines how the internal 2-bit burst counter increments A0/A1 during four-word bursts.

Can the 71V67602S150PFGI8 operate with only a 3.3V supply, or is the 2.5V VDDQ rail mandatory?

The 2.5V VDDQ supply is mandatory for the 71V67602S150PFGI8. VDD powers the core logic at 3.3V, while VDDQ exclusively powers the I/O buffers. Operating VDDQ outside 2.375V–2.625V violates DC specifications, causing invalid VOH/VOL levels and potential bus contention. Separate regulation and decoupling for VDDQ are required - no shared 3.3V rail substitution is permitted.

What is the function of the ADV pin during burst operations in the 71V67602S150PFGI8?

The ADV pin on the 71V67602S150PFGI8 controls burst counter advancement: ADV=LOW increments the internal burst counter for the next word in sequence, while ADV=HIGH suspends advancement - holding the current address for repeated access. This enables burst suspend/resume capability without restarting the sequence, critical for handling pipeline stalls in network processors.

Does the 71V67602S150PFGI8 support byte-write operations, and how are they enabled?

Yes, the 71V67602S150PFGI8 supports independent 9-bit byte writes via BW1–BW4 pins, gated by BWE. When BWE=LOW at the rising CLK edge, active BWx signals (LOW) enable corresponding byte lanes (BW1→I/O0–7+I/OP1, etc.). Each active byte write disables all outputs - ensuring atomicity. Global write (GW=LOW) overrides byte enables and writes all 36 bits simultaneously.