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Renesas 71V67602S166BGG
- Part No.:
- 71V67602S166BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67602S166BGG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,778
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Product details
Overview
71V67602S166BGG from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 166 MHz clock speed, 3.5 ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write with global and byte-level write control-used in high-speed cache and memory subsystems of networking processors and telecom line cards.
For engineers reviewing the 71V67602S166BGG datasheet, 71V67602S166BGG pinout, 71V67602S166BGG application, or 71V67602S166BGG equivalent, key selection criteria include burst counter architecture, single-cycle deselect timing, ZZ sleep mode current (≤70 µA), TQFP-100 package compatibility, and 256K×36 vs. 512K×18 configuration flexibility.
Technical Context
The 71V67602S166BGG implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state-no runtime reconfiguration permitted.
Write operation supports four modes: global write (GW active), byte writes (BWE + BW1–BW4), mixed-byte enables, and asynchronous OE-controlled output disable. Power management includes CMOS standby (ISB1 ≤70 mA), clock-running standby (ISB2 ≤175 mA), and full sleep (IZZ ≤70 µA) activated by ZZ HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9-Mbit); also configurable as 512K × 18-bit in same family |
| Max Clock Frequency | 166 MHz - enables 6 ns clock cycle for high-throughput burst transfers |
| Access Time (tCD) | 3.5 ns - guaranteed clock-to-valid-output delay at 166 MHz, critical for pipelined read timing |
| Core / I/O Supply | 3.3 V ±5% core (VDD), 2.5 V ±5% I/O (VDDQ) - mandates dual-rail PCB power design |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence - determines address increment pattern |
| Sleep Current (IZZ) | ≤70 µA at VDD = max - enables low-power idle states in telecom baseband modules |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard) - compatible with automated SMT assembly |
Pinout & Package
71V67602S166BGG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin functions are validated per IDT DSC-5311/09 datasheet Figures 02–03 and Tables 02–03.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous 19-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | Clock Input | Primary timing reference; all registers and burst counter advance on rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | 3-signal decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; supports multi-chip memory banks |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides all byte enables; BWE gates BWx; BW1 controls I/O0–7+I/OP1 (9-bit byte) |
| ADV, LBO | Burst Control | ADV=LOW advances internal burst counter; LBO=LOW selects linear burst order (static configuration) |
| OE | Output Enable | Asynchronous enable - drives I/O pins to high-Z when HIGH, independent of CLK |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces supply current to ≤70 µA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths with pipelined output staging |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3 V core; VDDQ = 2.5 V I/O; separate planes required to meet AC noise specs |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data appears one clock cycle after address latch - eliminates wait states in burst reads |
| Single-Cycle Deselect | Device enters high-Z output state within one CLK cycle of CE/CS deassertion - prevents bus contention |
| Self-Timed Write Cycle | Internal write completion detection eliminates need for external write pulse timing control |
| Linear/Interleaved Burst Selection | LBO pin statically configures burst address sequence - matches processor cache line ordering requirements |
| 2.5 V I/O Interface | Enables direct connection to 2.5 V logic families (e.g., ASIC I/O, FPGA banks) without level shifters |
Applications
| Networking Packet Buffer | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing incoming/outgoing packet headers and metadata in 10Gbps Ethernet switch fabric ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with packet processor's 36-bit burst interface. Use Value: 166 MHz clock rate and 3.5 ns tCD support sustained 594 MB/s read throughput (36-bit × 166 MHz), matching wire-speed processing. | Use Scenario: Serving as instruction/data cache for DSP-based channelized TDM framer in wireless base station equipment. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing zero-wait-state access to DSP core during real-time frame processing. Use Value: Pipelined outputs and single-cycle deselect eliminate pipeline stalls during context switches between voice and data channels. |
| Industrial PLC Memory Module | Radar Signal Processing Buffer |
Use Scenario: Holding program variables and I/O image tables in ruggedized programmable logic controller backplanes. IC Role / Device Role / Timing Role: Industrial-temperature (−40°C to +85°C) SRAM with ZZ sleep mode for energy-constrained edge controllers. Use Value: Full sleep current ≤70 µA extends battery backup runtime during brownout conditions without data loss. | Use Scenario: Buffering digitized IF samples between ADC and FFT engine in phased-array radar front-end modules. IC Role / Device Role / Timing Role: High-reliability burst SRAM synchronizing with radar timing generator clocks up to 166 MHz. Use Value: 256K×36 organization provides 9 Mbit depth for 4096-point complex FFT buffers with 24-bit precision + parity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18-167BZXI | 512K × 18-bit, 167 MHz, 3.3 V core / 1.8 V I/O, 119-ball BGA | Lower I/O voltage (1.8 V) requires level-shifting for 2.5 V systems; different burst addressing logic | Select only if migrating to 1.8 V I/O ecosystem and accepting BGA-only assembly. |
| AS7C36256P-15JIN | 256K × 36-bit, 15 ns async access, 3.3 V only, no burst or pipelining, 100-pin TQFP | No clocked interface or burst capability - incompatible with pipelined processor buses | Use only in legacy non-burst designs where timing margin allows 15 ns async latency. |
Compared with CY7C1362BV18-167BZXI and AS7C36256P-15JIN, the 71V67602S166BGG uniquely delivers 256K×36 burst capability at 166 MHz with 2.5 V I/O and TQFP packaging-enabling drop-in replacement in existing IDT-based cache designs without layout or voltage rail changes.
Availability
71V67602S166BGG is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, and industrial PLC memory modules requiring stable component supply across commercial and industrial temperature ranges.
Supply support for 71V67602S166BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.
The 71V67602S166BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in network processors, baseband ICs, and real-time embedded controllers.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V67602S166BGG?
The 71V67602S166BGG operates at up to 166 MHz with a guaranteed clock-to-data access time (tCD) of 3.5 ns under commercial conditions. This specification is validated per IDT DSC-5311/09, Table 16, and applies to the 256K × 36 configuration in 100-pin TQFP packaging. The 71V67602S166BGG achieves this performance using pipelined output registers synchronized to the rising CLK edge.
Does the 71V67602S166BGG support both linear and interleaved burst modes, and how is it configured?
Yes, the 71V67602S166BGG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved order is used. Per DSC-5311/09 Section 6.42, LBO is a static input and must not change state during operation-the 71V67602S166BGG does not support dynamic burst mode switching.
What power supply voltages are required for the 71V67602S166BGG, and what are their tolerances?
The 71V67602S166BGG requires two independent supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V ±5% for I/O circuitry. These values are specified in DSC-5311/09 Table 04 and must be maintained simultaneously during operation. The 71V67602S166BGG does not support single-supply operation or voltage scaling outside these ranges.
How does the ZZ (Sleep Mode) input function on the 71V67602S166BGG, and what is its impact on power consumption?
The ZZ input on the 71V67602S166BGG is an asynchronous active-HIGH signal that gates the internal clock and places the device into full sleep mode. When ZZ = HIGH, supply current drops to ≤70 µA (industrial grade), as confirmed in DSC-5311/09 Table 09. Data retention is guaranteed during sleep, and recovery time (tZZR) is 100 ns minimum. The 71V67602S166BGG remains in high-Z I/O state throughout sleep.
Is the 71V67602S166BGG pin-compatible with other members of the IDT71V676xx/78xx family, such as the 71V67802?
No, the 71V67602S166BGG is not fully pin-compatible with the IDT71V67802. While both share the same 100-pin TQFP footprint, DSC-5311/09 Note 1 in Table 01 states "BW3 and BW4 are not applicable for the IDT71V67802", meaning those pins are NC on the 71V67802 but functional on the 71V67602S166BGG. Direct substitution requires verification of BW3/BW4 usage and burst configuration logic in the target design.
71V67602S166BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67602S166BGG FAQ
1.How can I place an order for 71V67602S166BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67602S166BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67602S166BGG reliable?
The price and inventory of 71V67602S166BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67602S166BGG is usually 5 days.
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71V67602S166BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67602S166BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67602S166BGG?
For technical support, including 71V67602S166BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67602S166BGG requirements.
6.How does Aetrix verify that 71V67602S166BGG is sourced from the original manufacturer or authorized distributors?
All 71V67602S166BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67602S166BGG meets industry standards.
7.What is the process for return or replacement of 71V67602S166BGG?
All 71V67602S166BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67602S166BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67602S166BGG part is unused and in its original packaging.
Return procedure for 71V67602S166BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67602S166BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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