Renesas 71V67602S166BGG8

Overview

71V67602S166BGG8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 166 MHz clock operation, 3.5 ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write with global or byte-level control-used in high-speed cache and memory subsystems of network processors and telecom line cards.

For engineers reviewing the 71V67602S166BGG8 datasheet, 71V67602S166BGG8 pinout, 71V67602S166BGG8 application, or 71V67602S166BGG8 equivalent, key selection criteria include burst counter behavior, single-cycle deselect timing, ZZ sleep mode current (≤70 µA), and compatibility with 100-pin TQFP or 119-ball BGA footprints.

Technical Context

The 71V67602S166BGG8 implements a synchronous pipeline architecture where address latching is triggered by ADSP/ADSC low with CE low on CLK rising edge, and output data is registered for one-cycle latency. Burst addressing is managed by an internal binary counter synchronized to ADV transitions, with sequence order determined statically by LBO level before operation.

Write cycles are fully synchronous and support four distinct control paths: global write (GW), byte write enable (BWE) gating BW1–BW4, individual byte writes (BWx active low), and asynchronous OE-driven output disable. Sleep mode is entered asynchronously via ZZ high, disabling internal clock distribution while retaining data at ≤70 µA supply current.

Key Specifications

Pinout & Package

71V67602S166BGG8 is packaged in a 119-ball fine-pitch ball grid array (fBGA) per JEDEC MO-207, 12 mm × 12 mm body, 0.8 mm ball pitch. Pin functions are validated per IDT DSC-5311 Rev 09 (February 2009), with ball assignments matching the 256K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-166AXC and AS7C3256B-166BIN, the 71V67602S166BGG8 uniquely combines LBO-selectable burst order, ZZ-controlled deep sleep, and guaranteed single-cycle deselect - making it optimal for power-aware, timing-critical embedded memory subsystems.

Availability

71V67602S166BGG8 is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, and industrial PLC memory expansion requiring stable component supply and long-term lifecycle support.

Supply support for 71V67602S166BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs, acquired by Renesas Electronics in 2019.

The 71V67602S166BGG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, telecom, and real-time industrial control applications.

FAQ

What is the maximum clock frequency supported by the 71V67602S166BGG8?

The 71V67602S166BGG8 supports a maximum clock frequency of 166 MHz, corresponding to a minimum clock cycle time (tCYC) of 6 ns. This rating is guaranteed across commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges when operated at VDD = 3.3 V ±5% and VDDQ = 2.5 V ±5%. At 166 MHz, the device delivers 3.5 ns clock-to-data access time (tCD).

How does the LBO pin affect burst addressing behavior in the 71V67602S166BGG8?

The LBO (Linear Burst Order) pin on the 71V67602S166BGG8 statically configures the internal burst counter sequence: LBO low selects linear burst (00→01→10→11), while LBO high selects interleaved burst (00→01→11→10). LBO must be held stable during operation and is internally pulled to VDD if left unconnected. This setting directly determines address increment pattern for all four words in a burst read or write cycle.

Does the 71V67602S166BGG8 support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V67602S166BGG8 supports both configurations. In 256K × 36 mode, it uses A0–A17 for addressing and provides 36-bit data width (I/O0–I/O31 + I/OP1–I/OP4). In 512K × 18 mode, it remaps address lines to use A0–A18 and outputs 18-bit data on I/O0–I/O15 + I/OP1–I/OP2. The configuration is determined by system address decoding and is not user-programmable via mode pins.

What is the function of the ZZ pin on the 71V67602S166BGG8, and what is its sleep current?

The ZZ pin on the 71V67602S166BGG8 is an asynchronous input that places the device into full sleep mode when driven high. In this state, internal clock distribution is gated, dynamic power drops sharply, and supply current is reduced to ≤70 µA (industrial grade) while retaining full data integrity. ZZ is internally pulled to VSS if left unconnected, ensuring default active operation.

Can the 71V67602S166BGG8 be used with a 3.3V-only power supply, or is the 2.5V VDDQ rail mandatory?

The 2.5V VDDQ rail is mandatory for the 71V67602S166BGG8. While VDD supplies the 3.3V core logic, VDDQ independently powers the I/O buffers to ensure compatibility with 2.5V system buses and meet VIH/VIL thresholds for 2.5V signaling. Operating VDDQ outside 2.375–2.625 V violates DC specifications and risks data corruption or excessive I/O leakage current.