Renesas 71V67602S166PFG

Overview

71V67602S166PFG from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 166MHz clock rate, 3.5ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write control using GW, BWE, and BW1–BW4 for byte-selective writes - deployed in high-speed network packet buffers and cache subsystems.

For engineers reviewing the 71V67602S166PFG datasheet, 71V67602S166PFG pinout, 71V67602S166PFG application, or 71V67602S166PFG equivalent, key selection criteria include synchronous burst timing compliance, 100-pin TQFP mechanical fit, 3.3V core / 2.5V I/O voltage separation, single-cycle deselect capability, and industrial temperature support (–40°C to +85°C).

Technical Context

This SRAM implements a synchronous pipelined architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Internal burst logic uses ADV and LBO to generate four consecutive addresses from a single input, supporting both linear and interleaved sequences without external counter logic.

The device integrates separate 3.3V core (VDD) and 2.5V I/O (VDDQ) supplies, enabling interface compatibility with low-voltage processors while maintaining high-speed internal operation. Sleep mode (ZZ) reduces current to 50–70mA, and self-timed write cycles eliminate external write pulse generation.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by dot; pins A0–A18, I/O0–I/O31, I/OP1–I/OP4, and dedicated control signals occupy perimeter with power/ground distributed across multiple VDD, VDDQ, and VSS pins for noise suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-166AXC and AS7C362000B-166BIN, the 71V67602S166PFG uniquely combines LBO-selectable burst order, ADV-based burst suspension, and 3.5ns tCD at 166MHz - making it optimal for systems requiring flexible, low-latency burst memory access with minimal controller overhead.

Availability

71V67602S166PFG is available at Aetrix Electronics and suitable for network packet buffering, industrial motion control, telecom line card design, and embedded cache subsystems requiring stable component supply across long production lifecycles.

Supply support for 71V67602S166PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V67602 product line delivers high-speed synchronous SRAMs optimized for burst-oriented, low-latency applications in networking, storage, and real-time control systems - emphasizing deterministic timing, industrial reliability, and mixed-voltage interoperability.

FAQ

What is the maximum clock frequency supported by the 71V67602S166PFG?

The 71V67602S166PFG supports a maximum clock frequency of 166MHz, corresponding to a 6ns clock cycle time. This rating is guaranteed across the full industrial temperature range (–40°C to +85°C) and under specified 3.3V ±5% VDD and 2.5V ±5% VDDQ supply conditions. At this frequency, the device achieves a 3.5ns clock-to-data access time (tCD), enabling high-throughput burst reads in real-time systems.

Does the 71V67602S166PFG support both linear and interleaved burst modes?

Yes, the 71V67602S166PFG supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the internal burst counter advances in linear order (00→01→10→11). When LBO is HIGH, it follows an interleaved sequence (00→01→11→10). The LBO pin is asynchronous and static - it must remain stable during device operation to prevent undefined burst behavior.

How does the 71V67602S166PFG handle power management in low-activity states?

The 71V67602S166PFG implements three distinct low-power states: standby (ISB1 = 50–70mA), clock-running standby (ISB2 = 150–175mA), and full sleep mode (IZZ = 50–70mA). Sleep mode is entered asynchronously via the ZZ pin (HIGH), which gates the internal clock and reduces current while preserving data. Recovery time (tZZR) is 100ns, ensuring rapid resumption of operation after wake-up.

What is the function of the ADV pin on the 71V67602S166PFG?

The ADV (Burst Address Advance) pin on the 71V67602S166PFG controls progression of the internal burst counter. When ADV is LOW, the counter increments after each burst cycle, delivering the next sequential address. When ADV is HIGH, burst advancement is suspended - allowing repeated access to the same base address or controlled stepping through burst data. This enables flexible burst termination and partial-sequence reads/writes without external logic.

Is the 71V67602S166PFG pin-compatible with other members of the IDT71V676xx family?

The 71V67602S166PFG shares the same 100-pin TQFP package and core pinout with IDT71V67802 variants, but differs in memory organization (256K × 36 vs. 512K × 18) and pin assignments for BW3/BW4 (present on 71V67602, not used on 71V67802). Direct substitution requires verification of address width, byte-enable mapping, and burst control signal usage - it is not a drop-in replacement without board-level review.