Renesas 71V67602S166PFG8

Overview

71V67602S166PFG8 from Integrated Device Technology is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with pipelined outputs, 166 MHz clock operation, 3.5 ns clock-to-data access time, and 2.5V I/O supply. It supports linear/interleaved burst modes via LBO pin and features self-timed write with global and byte-level write control-used in high-speed cache and buffer subsystems of network processors and telecom line cards.

For engineers reviewing the 71V67602S166PFG8 datasheet, 71V67602S166PFG8 pinout, 71V67602S166PFG8 application, or 71V67602S166PFG8 equivalent, key selection criteria include synchronous burst timing compliance, TQFP-100 package compatibility, 3.3V core / 2.5V I/O voltage separation, single-cycle deselect capability, and industrial temperature range support (–40°C to +85°C).

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects linear or interleaved addressing per LBO state, delivering four consecutive 36-bit words per address cycle.

The device integrates separate VDD (3.3V) and VDDQ (2.5V) supplies, enabling I/O voltage compatibility with 2.5V logic while maintaining 3.3V core performance. Sleep mode is entered asynchronously via ZZ=HIGH, reducing supply current to 50–70 mA with guaranteed data retention.

Key Specifications

Pinout & Package

71V67602S166PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin 1 is marked by a dot; pin numbering follows standard counter-clockwise convention from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-166BAXI and AS7C36256PFS-166BIN, the 71V67602S166PFG8 uniquely combines industrial temperature support, TQFP-100 packaging, and strict 2.5V I/O compliance-making it the only drop-in solution for legacy 2.5V bus designs requiring extended thermal operation.

Availability

71V67602S166PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, industrial PLC data logging, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67602S166PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V67602 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking infrastructure and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the maximum clock frequency supported by the 71V67602S166PFG8?

The 71V67602S166PFG8 supports a maximum clock frequency of 166 MHz, corresponding to a 6 ns clock cycle time. This is validated across the full industrial temperature range (–40°C to +85°C) and under specified 3.3V ±5% VDD and 2.5V ±5% VDDQ conditions. The device guarantees 3.5 ns clock-to-data (tCD) access time at this rate, enabling high-throughput burst transfers without wait states.

Does the 71V67602S166PFG8 support both linear and interleaved burst modes?

Yes, the 71V67602S166PFG8 supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear burst addressing (00→01→10→11); when LBO = HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation, as confirmed in the functional description and burst sequence tables of the datasheet.

What power supply voltages does the 71V67602S166PFG8 require?

The 71V67602S166PFG8 requires two independent power supplies: VDD = 3.3V ±5% for the core logic and VDDQ = 2.5V ±5% for the I/O interface. These rails are not interchangeable-VDD powers internal registers and memory array, while VDDQ sets the output voltage level and input thresholds for data and control pins. Decoupling capacitors must be placed separately for each rail per the layout guidelines.

How does the 71V67602S166PFG8 enter and exit sleep mode?

The 71V67602S166PFG8 enters sleep mode asynchronously when ZZ is driven HIGH; this gates the internal clock and reduces ICC to ≤70 mA while retaining data. Exit from sleep requires ZZ returning LOW followed by tZZR ≥100 ns before the next valid CLK edge. During wake-up, the device remains deselected until tZZR expires-no additional reset or initialization sequence is needed for the 71V67602S166PFG8.

Is the 71V67602S166PFG8 pin-compatible with other devices in the IDT71V676xx family?

The 71V67602S166PFG8 shares identical pinout and electrical behavior with other 256K × 36 variants in the IDT71V676xx family (e.g., 71V67602S150PFG8, 71V67602S133PFG8) in the same TQFP-100 package. Frequency-grade differences affect only AC timing parameters-not pin function, DC characteristics, or register mapping-so PCB layout and firmware remain unchanged across speed grades of the 71V67602S166PFG8.