Renesas 71V67603S133BG

Overview

71V67603S133BG from IDT (Integrated Device Technology) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It supports 133MHz clock frequency with 4.2ns clock-to-data access time, operates across commercial temperature range (0°C to +70°C), and features self-timed write with global/byte write control - used in high-speed networking packet buffers and cache subsystems.

For engineers reviewing the 71V67603S133BG datasheet, 71V67603S133BG pinout, 71V67603S133BG application, or 71V67603S133BG equivalent, key selection criteria include burst order configuration (LBO), pipelined read timing, ZZ-controlled sleep mode, and compatibility with 3.3V I/O systems requiring deterministic low-latency memory access.

Technical Context

The 71V67603S133BG implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with LBO selecting linear or interleaved sequence - critical for cache line alignment in processor interfaces.

Burst writes are controlled via GW (global) or BWE/BWx (byte-select) inputs, while pipelined outputs deliver first data one clock cycle after address assertion. The device supports single-cycle deselect via CE/CS0/CS1 decoding and asynchronous power-down via ZZ input, enabling rapid entry into sub-50µA sleep current state.

Key Specifications

Pinout & Package

71V67603S133BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body size, with exposed thermal pad (PKG100). Pinout conforms to 256K × 36 configuration as documented in IDT datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C33256P-133JCIN, the 71V67603S133BG uniquely delivers pipelined 4.2ns tCD latency with programmable burst order and byte-select write - making it irreplaceable in latency-constrained, cache-coherent, or burst-optimized designs.

Availability

71V67603S133BG is available at Aetrix Electronics and suitable for networking packet buffers, processor cache interfaces, telecom line card memory, and ATE pattern memory requiring stable component supply and long-term obsolescence management.

Supply support for 71V67603S133BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, now part of Renesas Electronics since 2019.

The 71V67603S133BG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented applications in networking, computing, and test equipment where deterministic timing and power efficiency are critical.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BG?

The 71V67603S133BG is rated for 133MHz operation with a guaranteed clock-to-data access time (tCD) of 4.2ns. This specification applies under commercial temperature conditions (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. The device also supports 150MHz (3.8ns tCD) and 166MHz (3.5ns tCD) variants, but the 71V67603S133BG is specifically characterized and screened for 133MHz performance.

Does the 71V67603S133BG support both 256K × 36 and 512K × 18 memory configurations on the same silicon?

Yes, the 71V67603S133BG supports both configurations via pin strapping and address decoding. In 256K × 36 mode, A0–A17 define the row address and all 36 data bits (I/O0–I/O31 + I/OP1–I/OP4) are active. In 512K × 18 mode, A0–A18 are used and data width is halved - confirmed by functional block diagram and PKG100 pin configuration diagrams in the IDT datasheet.

How does the LBO pin affect burst addressing behavior in the 71V67603S133BG?

The LBO (Linear Burst Order) pin selects between two burst sequences: when LBO = LOW, the device uses linear addressing (00→01→10→11); when LBO = HIGH, it uses interleaved addressing (00→01→11→10). This setting must remain static during operation and is sampled at power-up or reset - directly determining compatibility with host processor cache line fill protocols.

What is the role of the ZZ pin, and what power savings does it provide in the 71V67603S133BG?

The ZZ pin is an asynchronous active-HIGH input that places the 71V67603S133BG into full sleep mode, reducing supply current to 50mA (IZZ) - an 85% reduction versus active operation (260mA IDD at 133MHz). Data retention is guaranteed during sleep, and recovery time (tZZR) is 100ns, enabling rapid wake-up for burst-intensive workloads.

Can the 71V67603S133BG perform partial-word writes, and how are they implemented?

Yes, the 71V67603S133BG supports partial-word writes using byte write enables BW1–BW4, each controlling a 9-bit segment (e.g., BW1 → I/O0–I/O7 + I/OP1). When BWE = LOW, the asserted BWx lines gate individual byte writes; all outputs are disabled during byte-write cycles - enabling targeted updates without read-modify-write overhead in protocol processing buffers.