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Renesas 71V67603S133BG8

Name: 71V67603S133BG8
Brand: Renesas
SKU: 71V67603S133BG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S133BG8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67603S133BG8.pdf

Description:: IC SRAM 9MBIT PARALLEL 119PBGA

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Product details

Overview

71V67603S133BG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S133BG8 datasheet, 71V67603S133BG8 pinout, 71V67603S133BG8 application, or 71V67603S133BG8 equivalent, key selection criteria include burst timing compliance, ZZ sleep mode behavior, TQFP-100 package compatibility, and 3.3V I/O voltage tolerance - all critical for legacy telecom and industrial controller memory upgrades.

Technical Context

The 71V67603S133BG8 implements a synchronous interface with pipelined read outputs: first data appears one clock cycle after address latch, followed by three more words on successive rising edges. Burst sequencing is governed by an internal binary counter and controlled by ADV, ADSP, ADSC, and LBO inputs - enabling linear or interleaved address progression without external logic.

Write operations are fully registered and support multiple configurations: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4). Power management includes asynchronous ZZ sleep mode (reducing supply current to 50mA) and CMOS standby (50mA at f = 0), with clock-running standby at 150mA under 133MHz conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); enables 36-bit parallel data path for wide-bus systems like PCI-X or legacy RISC caches.
Max Clock Frequency	133MHz (tCYC = 7.5ns); guarantees deterministic 4.2ns clock-to-data timing for real-time buffer applications.
Access Time	4.2ns clock access time; defines worst-case delay from CLK↑ to valid output data under 133MHz operation.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); allows direct interfacing with 3.3V logic families without level shifters.
Operating Temperature	0°C to +70°C (Commercial grade); validated for stable operation in office and non-ruggedized embedded environments.
Power Consumption	IDZ = 50mA in full sleep mode (ZZ = HIGH); reduces system idle power in burst-idle network packet processors.
Burst Mode Control	LBO pin selects linear or interleaved burst order; determines address sequence for four-word bursts without software overhead.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout conforms to PKG100 configuration for 256K × 36 organization.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching triggered by CLK↑ + ADSP↓ or ADSC↓; A0/A1 define burst word order per LBO state.
CLK	Clock Input	Primary timing reference; all synchronous operations (read/write/burst advance) edge-triggered on rising edge.
ADSP / ADSC	Address Status Inputs	ADSP (processor) and ADSC (cache controller) load address register; ADSP gated by CE, ADSC not gated.
ADV	Burst Address Advance	Active-low synchronous signal that increments internal burst counter; HIGH suspends burst sequence.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE enables byte write mode; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.).
OE	Output Enable	Asynchronous control: LOW enables outputs; HIGH forces I/O pins to high-impedance regardless of clock state.
ZZ	Sleep Mode Input	Asynchronous HIGH disables internal clock and reduces IDD to 50mA; retains data without external refresh.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered input/output paths ensure setup/hold compliance at 133MHz.

Key Features

Feature	Design Value
Pipelined Outputs	First read data available one clock cycle after address latch; eliminates wait states in high-throughput streaming buffers.
Single-Cycle Deselect	Chip deactivation completes within one CLK cycle; enables rapid context switching between memory banks in multi-processor systems.
Self-Timed Write Cycle	Internal timing logic eliminates need for external write pulse generation; simplifies FPGA/CPLD interface design.
Linear/Interleaved Burst Selection	LBO pin statically configures burst address sequence (A0/A1 progression), matching CPU/cache controller expectations.
3.3V Core & I/O Supplies	Separate VDD (core) and VDDQ (I/O) rails allow independent noise filtering and reduce crosstalk in mixed-signal PCB layouts.

Applications

Network Packet Buffer	Legacy RISC Cache Subsystem
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level frame buffer with burst-aligned DMA transfers. Use Value: 133MHz clock rate and pipelined outputs sustain 4.8 Gbps sustained throughput (36-bit × 133MHz), meeting Gigabit Ethernet line-rate buffering needs.	Use Scenario: Backing instruction/data cache for PowerPC or MIPS-based industrial controllers. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to cached instructions during pipeline fetch cycles. Use Value: Single-cycle deselect and 4.2ns access time eliminate pipeline stalls during cache line fills, improving average instruction execution rate.
Telecom Line Card Memory	Test Equipment Pattern Memory
Use Scenario: Holding protocol translation tables and signaling message queues in E1/T1 channel banks. IC Role / Device Role / Timing Role: Deterministic-access memory supporting time-critical ISDN/Q.931 message assembly/disassembly. Use Value: ZZ sleep mode reduces idle power to 50mA, extending thermal margin in densely packed line card chassis.	Use Scenario: Storing stimulus/response vectors in automated boundary-scan testers (JTAG) and logic analyzers. IC Role / Device Role / Timing Role: High-reliability SRAM capturing high-speed digital patterns with precise clock-aligned sampling. Use Value: 100-pin TQFP package provides robust solder joints and traceable signal routing for >100MHz test pattern integrity.

Network Packet Buffer

Legacy RISC Cache Subsystem

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches before forwarding decision.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level frame buffer with burst-aligned DMA transfers.

Use Value: 133MHz clock rate and pipelined outputs sustain 4.8 Gbps sustained throughput (36-bit × 133MHz), meeting Gigabit Ethernet line-rate buffering needs.

Use Scenario: Backing instruction/data cache for PowerPC or MIPS-based industrial controllers.

IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to cached instructions during pipeline fetch cycles.

Use Value: Single-cycle deselect and 4.2ns access time eliminate pipeline stalls during cache line fills, improving average instruction execution rate.

Telecom Line Card Memory

Test Equipment Pattern Memory

Use Scenario: Holding protocol translation tables and signaling message queues in E1/T1 channel banks.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting time-critical ISDN/Q.931 message assembly/disassembly.

Use Value: ZZ sleep mode reduces idle power to 50mA, extending thermal margin in densely packed line card chassis.

Use Scenario: Storing stimulus/response vectors in automated boundary-scan testers (JTAG) and logic analyzers.

IC Role / Device Role / Timing Role: High-reliability SRAM capturing high-speed digital patterns with precise clock-aligned sampling.

Use Value: 100-pin TQFP package provides robust solder joints and traceable signal routing for >100MHz test pattern integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-133AXC	256K × 36, 133MHz, 3.3V, but uses different burst control (MODE pin vs. LBO) and lacks ADSC input.	Requires redesign of burst address logic; no cache-controller ADSC support limits use in dual-processor cache coherency designs.	Prefer when ADSC interface is unused and board layout accommodates Cypress pinout differences.
AS7C3256B-133JCIN	256K × 36, 133MHz, 3.3V, but only supports linear burst (no LBO), and has higher tCHZ (5.5ns vs. 4.2ns).	Cannot replicate interleaved burst sequences required by certain PowerPC cache controllers; slower output disable impacts multi-bank arbitration.	Select only if system uses linear-only burst and timing margins permit 1.3ns longer high-Z transition.

Compared with CY7C1371DV33-133AXC and AS7C3256B-133JCIN, the 71V67603S133BG8 uniquely supports both interleaved/linear burst modes via LBO and integrates ADSC for cache-coherent systems - making it irreplaceable in legacy telecom and RISC cache designs where those interfaces are hardwired.

Availability

71V67603S133BG8 is available at Aetrix Electronics and suitable for network packet buffering, legacy RISC cache subsystems, and telecom line card memory requiring stable component supply and long-term obsolescence mitigation.

Supply support for 71V67603S133BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, timing, and interface solutions for communications and industrial infrastructure.

The 71V67603S133BG8 belongs to IDT's 71V67xx family of pipelined synchronous SRAMs, designed specifically for low-latency, burst-oriented memory subsystems in telecom, networking, and high-end embedded computing.

FAQ

What is the maximum operating frequency supported by the 71V67603S133BG8?

The 71V67603S133BG8 is rated for 133MHz operation with a guaranteed 4.2ns clock access time. This frequency is validated across the commercial temperature range (0°C to +70°C) and requires adherence to specified setup/hold times for all synchronous inputs relative to CLK. Higher frequencies (150MHz/166MHz) apply only to other variants in the 71V67xx family, not this specific part number.

Does the 71V67603S133BG8 support both linear and interleaved burst modes?

Yes, the 71V67603S133BG8 supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO = LOW, linear burst sequence is selected; when LBO = HIGH, interleaved burst sequence is activated. The device retains its configured burst mode until LBO is changed - and LBO must remain static during active operation per datasheet specification.

How does the ZZ pin function in the 71V67603S133BG8?

The ZZ pin on the 71V67603S133BG8 enables asynchronous full-sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to 50mA while retaining stored data. ZZ is internally pulled to VSS if left unconnected, so external pull-up is required to activate sleep. Recovery time (tZZR) is 100ns, and the device must be deselected before exiting sleep mode.

What package type is used for the 71V67603S133BG8?

The 71V67603S133BG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body size with 0.5mm lead pitch. This package is distinct from the 119-ball BGA and 165-ball fBGA variants offered for other members of the 71V67xx family - the 'BG8' suffix explicitly denotes the TQFP-100 configuration.

Can the 71V67603S133BG8 be used in industrial temperature applications?

No, the 71V67603S133BG8 is specified only for commercial temperature range (0°C to +70°C). While the broader 71V67xx family includes industrial-grade variants (e.g., 71V67603S133BGI), the 'BG8' suffix identifies this part as commercial-grade. Using it outside 0°C–70°C violates datasheet operating conditions and voids parametric guarantees including access time and power consumption.

71V67603S133BG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67603S133BG8 FAQ

1.How can I place an order for 71V67603S133BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S133BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S133BG8 reliable?

The price and inventory of 71V67603S133BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133BG8 is usually 5 days.

3.What payment methods are accepted for 71V67603S133BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67603S133BG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67603S133BG8?

71V67603S133BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67603S133BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S133BG8?

For technical support, including 71V67603S133BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133BG8 requirements.

6.How does Aetrix verify that 71V67603S133BG8 is sourced from the original manufacturer or authorized distributors?

All 71V67603S133BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133BG8 meets industry standards.

7.What is the process for return or replacement of 71V67603S133BG8?

All 71V67603S133BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S133BG8 part is unused and in its original packaging.

Return procedure for 71V67603S133BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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