My Inquiry
My Account
Renesas 71V67603S133BGG
- Part No.:
- 71V67603S133BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67603S133BGG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,138
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67603S133BGG from IDT (Integrated Device Technology) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and targets high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V67603S133BGG datasheet, 71V67603S133BGG pinout, 71V67603S133BGG application, or 71V67603S133BGG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility, TQFP-100 package footprint, and industrial temperature range (-40°C to +85°C) support.
Technical Context
The 71V67603S133BGG implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after CLK and subsequent data on successive edges.
Burst order is determined by the static LBO pin (LOW = linear, HIGH = interleaved), while ADV enables burst advance or suspension. Write operations are controlled synchronously via GW (global), BWE (byte enable), and BW1–BW4 (individual 9-bit byte selects), with OE providing asynchronous output enable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit mode via pin configuration |
| Clock Frequency | 133MHz maximum; defines system bus timing budget for burst read/write cycles |
| Access Time | 4.2ns clock-to-data (tCD); determines minimum latency between CLK rise and valid output |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); requires dual-rail 3.3V regulation |
| Operating Temperature | -40°C to +85°C (industrial grade); validated for embedded telecom and industrial control environments |
| Power Consumption | IDD = 280mA max at 133MHz; ISB2 = 170mA max with clock running but deselected |
| Package | 100-pin TQFP (JEDEC standard, 14mm × 20mm); compatible with standard SMT reflow profiles |
Pinout & Package
71V67603S133BGG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm pitch. Pinout matches the PKG100 configuration for 256K × 36 organization as documented in IDT datasheet revision 6.42.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge with ADSP/ADSC assertion; A0–A17 used for 256K × 36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous operations aligned to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select individual 9-bit bytes (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register synchronously |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst sequence, HIGH = interleaved burst sequence |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode, reducing supply current to 70mA max (ISB1/IZZ) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; registered input/output paths with pipelined output staging |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; separate rails minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data available one clock cycle after address latch; enables continuous burst throughput without inter-cycle gaps |
| Single-Cycle Deselect | Device transitions to high-impedance or standby state within one CLK period upon chip disable, minimizing bus contention |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; write completion determined by internal state, not fixed duration |
| Linear/Interleaved Burst Modes | LBO pin selects burst address sequence-linear for sequential memory access, interleaved for cache line optimization |
| Byte-Write Granularity | Four independent 9-bit byte write enables (BW1–BW4) allow partial-word updates without read-modify-write overhead |
Applications
| Network Packet Buffering | High-Speed Cache Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches and routers. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with MAC and switching fabric logic. Use Value: 133MHz burst reads deliver 4×36-bit data per address cycle, matching 10Gbps+ line rates with minimal pipeline stalls. | Use Scenario: Serving as Level 2 (L2) cache for DSPs or network processors requiring deterministic access timing. IC Role / Device Role / Timing Role: Synchronous SRAM providing sub-5ns access to cached instruction/data blocks with pipelined output staging. Use Value: Single-cycle deselect and pipelined outputs eliminate wait states during cache line fills and context switches. |
| Industrial PLC Data Logging | Telecom Baseband Processing |
Use Scenario: Capturing real-time sensor and I/O status snapshots in programmable logic controllers operating across extended temperature ranges. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing timestamped process variables with guaranteed data retention in sleep mode (ZZ active). Use Value: -40°C to +85°C operation and 70mA max sleep current (IZZ) enable reliable long-term logging in uncontrolled environments. | Use Scenario: Buffering IQ samples between ADC/DAC and FPGA-based channelizers in wireless base stations. IC Role / Device Role / Timing Role: Synchronous interface SRAM absorbing bursty sample streams while maintaining precise timing alignment with baseband clocks. Use Value: 3.3V I/O compatibility and 7pF I/O capacitance (CI/O) ensure signal integrity at 133MHz with standard PCB trace design rules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BZXI | 256K × 36, 133MHz, 3.3V core/I/O; identical TQFP-100 package but Cypress-specific timing margins | Validated for automotive AEC-Q100 Grade 3; less common in telecom infrastructure designs | Select when automotive qualification or Cypress ecosystem integration is required |
| AS7C3256A-133JCIN | 256K × 36, 133MHz, 3.3V; uses different burst control (no LBO pin), simplified write enable scheme | Lacks linear/interleaved burst selection; limited to linear-only burst addressing | Choose for cost-sensitive designs where burst flexibility is unnecessary and pin count must be minimized |
Compared with CY7C1362BV33-133BZXI and AS7C3256A-133JCIN, the 71V67603S133BGG provides unique LBO-configurable burst sequencing and tighter tCHZ/tOHZ timing (1.5–4.2ns), enabling higher sustained bandwidth in cache-coherent systems.
Availability
71V67603S133BGG is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, industrial PLC data logging, and telecom baseband processing requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for 71V67603S133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, now part of Renesas Electronics since 2019.
The 71V67603S133BGG belongs to IDT's 71V67603/71V67803 family of synchronous SRAMs, designed specifically for demanding high-speed data buffering and caching in networking, telecom, and industrial control systems.
FAQ
What is the maximum supported clock frequency for the 71V67603S133BGG?
The 71V67603S133BGG is rated for 133MHz operation, corresponding to a 7.5ns clock cycle time (tCYC) and 4.2ns clock-to-data access time (tCD). This rating is guaranteed over the full industrial temperature range (-40°C to +85°C) and 3.3V ±5% supply conditions. Higher frequencies (150MHz/166MHz) are specified only for commercial temperature range operation.
Does the 71V67603S133BGG support both linear and interleaved burst modes?
Yes, the 71V67603S133BGG supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved addressing (00→01→11→10). LBO is an asynchronous static input and must remain stable during device operation to prevent burst sequence corruption.
How does the 71V67603S133BGG handle power-down and sleep modes?
The 71V67603S133BGG implements two low-power states: CMOS standby (ISB1 = 70mA max) when deselected, and full sleep mode (IZZ = 70mA max) activated by driving ZZ HIGH. In sleep mode, the internal clock is gated, and data retention is guaranteed. Recovery from sleep requires tZZR ≥100ns after ZZ returns LOW before valid operations resume.
What is the function of the ADV pin on the 71V67603S133BGG?
The ADV (Burst Address Advance) pin controls burst progression. When ADV is LOW, the internal burst counter increments automatically after each cycle, delivering four consecutive data words. When ADV is HIGH, burst advancement is suspended, holding the current address for repeated access-enabling burst pause/resume functionality critical for cache coherency protocols.
Can the 71V67603S133BGG operate in 512K × 18-bit configuration?
Yes, the 71V67603S133BGG supports 512K × 18-bit organization through pin strapping and address mapping changes, as confirmed in the device's functional description and PKG100 pin configuration diagrams. In this mode, A18 becomes an address bit, and the 36-bit I/O bus operates as two independent 18-bit ports, retaining all timing and control features including burst mode and byte write capability.
71V67603S133BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67603S133BGG FAQ
1.How can I place an order for 71V67603S133BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S133BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S133BGG reliable?
The price and inventory of 71V67603S133BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133BGG is usually 5 days.
3.What payment methods are accepted for 71V67603S133BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67603S133BGG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67603S133BGG?
71V67603S133BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67603S133BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67603S133BGG?
For technical support, including 71V67603S133BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133BGG requirements.
6.How does Aetrix verify that 71V67603S133BGG is sourced from the original manufacturer or authorized distributors?
All 71V67603S133BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133BGG meets industry standards.
7.What is the process for return or replacement of 71V67603S133BGG?
All 71V67603S133BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S133BGG part is unused and in its original packaging.
Return procedure for 71V67603S133BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S133BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
