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Renesas 71V67603S133BGG8
- Part No.:
- 71V67603S133BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67603S133BGG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,729
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Product details
Overview
71V67603S133BGG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V67603S133BGG8 datasheet, 71V67603S133BGG8 pinout, 71V67603S133BGG8 application, or 71V67603S133BGG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70µA), VDDQ/VDD separation, and TQFP/BGA package compatibility for memory subsystem layout.
Technical Context
This SRAM implements a synchronous interface with registered address, data, and control paths triggered on CLK rising edge. Burst addressing uses an internal binary counter synchronized to ADV low, with LBO statically selecting linear or interleaved sequence - no dynamic reconfiguration allowed during operation.
Write operations support four distinct modes: global write (GW active), byte write (BWE + BW1–BW4), self-timed cycle termination, and pipelined read output staging. Power management includes asynchronous ZZ sleep entry (≤100ns pulse width) and CMOS standby (ISB1 ≤70mA at industrial temp).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin multiplexing |
| Max Clock Frequency | 133MHz - guarantees tCYC ≤7.5ns, enabling real-time packet buffering in 10G Ethernet line cards |
| Access Time | 4.2ns clock-to-data (tCD) - defines minimum pipeline stage delay for synchronous bus interfacing |
| VDD / VDDQ | 3.3V ±5% core / 3.3V ±5% I/O - requires separate low-noise power domains to meet AC noise margin specs |
| Sleep Current (IZZ) | ≤70µA at industrial temp - enables low-power idle states in always-on telecom infrastructure |
| Burst Mode | Linear or interleaved 4-word burst (LBO pin-controlled) - matches CPU/cache controller address sequencing requirements |
| Output Enable Access | tOE ≤4.2ns - ensures sub-cycle data validity window for multi-SRAM bank arbitration |
Pinout & Package
71V67603S133BGG8 is packaged in a JEDEC-standard 119-ball BGA (BGG119), 14mm × 20mm footprint, with 3.3V core (VDD) and I/O (VDDQ) supplies physically isolated per ball map.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus for 256K × 36 configuration; A18 unused in this variant |
| CLK | Clock Input | Single-ended synchronous reference; all registers edge-triggered on rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) overrides byte enables; BW1–BW4 select 9-bit I/O nibbles independently |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal counter; ADSP/ADSC load initial address - both synchronous, active-low |
| LBO | Burst Order Select | Static input (no runtime change): LBO = VSS → linear, LBO = VDD → interleaved |
| ZZ | Asynchronous Sleep | High-active signal gates internal CLK; retains data with IZZ ≤70µA at –40°C to +85°C |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with parity bits (I/OP1–I/OP4); registered input/output paths |
| VDD, VDDQ, VSS | Power/Ground | Dedicated VDD (core), VDDQ (I/O), and multiple VSS balls - mandatory separate plane routing |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First data word appears one clock cycle after address latch - eliminates combinatorial delay in high-frequency bus designs |
| Single-Cycle Deselect | Chip deactivation completes within one CLK period - enables rapid bank switching without timing penalty |
| Self-Timed Write Cycle | Internal logic terminates write based on GW/BWE/BWx state at cycle end - removes external write-pulse timing constraints |
| Linear/Interleaved Burst | LBO pin selects burst address sequence matching Intel Pentium or Motorola PowerPC cache controller protocols |
| Asynchronous Sleep Entry | ZZ high immediately disables internal clock tree - achieves full retention with <70µA supply current |
Applications
| Network Packet Buffer | Baseband Processor Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfaced to MAC controller via synchronous 36-bit bus. Use Value: 133MHz burst reads deliver 4×36-bit words per cycle (192 Mbps effective bandwidth), meeting 10G line rate requirements. | Use Scenario: Acting as L2 cache for FPGA-based wireless baseband processors handling LTE/5G channel decoding. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic access to convolutional decoder lookup tables. Use Value: Pipelined outputs and single-cycle deselect enable seamless pipeline handoff between FFT and Viterbi blocks without stall cycles. |
| Industrial PLC Memory Module | Radar Signal Processing Buffer |
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM with ZZ sleep supporting low-power maintenance mode during idle periods. Use Value: IZZ ≤70µA at +85°C allows continuous data retention during 24/7 operation with minimal thermal load. | Use Scenario: Buffering ADC samples from phased-array radar receivers prior to FFT computation. IC Role / Device Role / Timing Role: High-reliability SRAM with burst-mode addressing aligned to radar chirp timing windows. Use Value: Linear burst sequence (LBO = VSS) matches sequential ADC sample ordering, eliminating address calculation overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BZXI | 256K × 36, 133MHz, but uses QDR-II architecture with separate read/write ports and no ZZ sleep pin | Requires dual-port controller logic; lacks asynchronous sleep for low-power idle states | Select when simultaneous read/write throughput >133MHz is required and power-down not needed |
| AS7C3256B-133JIN | 256K × 36, 133MHz, but only supports commercial temp (0°C to +70°C) and lacks ADV/ADSC burst control inputs | Not qualified for industrial environments; cannot interface directly with cache controllers requiring burst status signaling | Select for cost-sensitive commercial systems where extended temperature and cache coherency are not required |
Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JIN, the 71V67603S133BGG8 uniquely combines industrial temperature rating, asynchronous ZZ sleep, and full cache-controller-compatible burst signaling (ADV/ADSP/ADSC) in a single 119-ball BGA package.
Availability
71V67603S133BGG8 is available at Aetrix Electronics and suitable for network packet buffering, baseband processor caching, and industrial PLC memory modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67603S133BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for high-performance computing and communications infrastructure.
The 71V67603S133BGG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for cache and buffer applications in telecom, networking, and industrial control systems demanding deterministic timing and low-power sleep modes.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V67603S133BGG8?
The 71V67603S133BGG8 is rated for 133MHz operation with a guaranteed clock-to-data access time (tCD) of 4.2ns. This specification applies across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, ensuring deterministic timing in mission-critical buffer applications.
Does the 71V67603S133BGG8 support both linear and interleaved burst modes, and how is selection implemented?
Yes, the 71V67603S133BGG8 supports both linear and interleaved 4-word burst sequences. Selection is controlled by the LBO pin: LBO = VSS (low) configures linear mode; LBO = VDD (high) configures interleaved mode. LBO is a static input - it must remain stable during device operation and cannot be changed dynamically.
What power management features does the 71V67603S133BGG8 provide, and what is its sleep current?
The 71V67603S133BGG8 provides asynchronous sleep mode via the ZZ input. When ZZ is driven high, internal clock gating reduces supply current to ≤70µA at industrial temperature. Data retention is fully guaranteed in this state, making it suitable for low-power idle modes in always-on infrastructure equipment.
How many address bits are used in the 256K × 36 configuration of the 71V67603S133BGG8?
In the 256K × 36 configuration, the 71V67603S133BGG8 uses 18 address bits (A0–A17). A18 is not utilized in this organization and remains unconnected. The device also supports 512K × 18 mode using A18, but that configuration is not applicable to the 71V67603S133BGG8 variant.
What is the function of the ADV, ADSP, and ADSC pins on the 71V67603S133BGG8?
ADV (Burst Address Advance) controls internal counter progression during burst reads/writes. ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous, active-low inputs that latch the initial address into the internal register - ADSP is gated by CE, while ADSC operates independently. All three are essential for cache-coherent burst operation.
71V67603S133BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67603S133BGG8 FAQ
1.How can I place an order for 71V67603S133BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S133BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V67603S133BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133BGG8 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that 71V67603S133BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V67603S133BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133BGG8 meets industry standards.
7.What is the process for return or replacement of 71V67603S133BGG8?
All 71V67603S133BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S133BGG8 part is unused and in its original packaging.
Return procedure for 71V67603S133BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S133BGG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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