Renesas 71V67603S133BGGI

Overview

71V67603S133BGGI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst counter logic. It supports 133MHz operation with 4.2ns clock access time, operates at 3.3V core and I/O supplies, and features global/byte write control and linear/interleaved burst modes for high-bandwidth memory subsystems in networking and telecom line cards.

For engineers reviewing the 71V67603S133BGGI datasheet, 71V67603S133BGGI pinout, 71V67603S133BGGI application, or 71V67603S133BGGI equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70µA), pipelined read latency, 100-pin TQFP or BGA package compatibility, and support for synchronous CE/CS0/CS1 chip select decoding in high-speed cache interfaces.

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal architecture includes an address register, burst address counter, four independent byte-write registers, and pipelined output buffers that deliver first data one clock cycle after address latch.

The device supports two memory configurations-256K × 36 (address range A0–A17) or 512K × 18 (A0–A18)-selected by external wiring and package variant. Burst sequencing is controlled by ADV, ADSP/ADSC, and LBO, with self-timed writes enabled via GW, BWE, and BW1–BW4, ensuring deterministic write completion without external wait-state generation.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), the 71V67603S133BGGI uses a 12 × 10 ball array with VDDQ/VSS power/ground pairs distributed across the perimeter for low-impedance I/O supply routing and signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 71V67603S133BGGI uniquely integrates programmable burst sequencing (LBO), processor/cache address status inputs (ADSP/ADSC), and true self-timed writes-enabling direct connection to complex SoCs without glue logic.

Availability

71V67603S133BGGI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, and radar signal processors requiring stable component supply across extended product lifecycles and industrial temperature operation.

Supply support for 71V67603S133BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications and computing infrastructure.

The 71V67603S133BGGI belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic low-latency memory access in carrier-class networking and real-time signal processing systems.

FAQ

What memory configuration does the 71V67603S133BGGI support?

71V67603S133BGGI supports both 256K × 36-bit and 512K × 18-bit organizations. The configuration is determined by external address wiring and package-specific pin mapping-not user-programmable. In 256K × 36 mode, A0–A17 are used; in 512K × 18 mode, A0–A18 are active. The 71V67603S133BGGI datasheet specifies pin functions for both modes in its configuration tables.

Does the 71V67603S133BGGI require power supply sequencing?

No, the 71V67603S133BGGI does not require strict power supply sequencing. Both VDD (3.3V core) and VDDQ (3.3V I/O) may ramp simultaneously. However, no input or I/O pin voltage may exceed VDDQ during power-up, and the device must be deselected when exiting sleep mode (ZZ HIGH → LOW transition).

How does burst mode operate on the 71V67603S133BGGI?

Burst mode on the 71V67603S133BGGI delivers four consecutive data words per address using an internal binary counter. Initiated by ADV = LOW and ADSP/ADSC assertion, it sequences through addresses defined by LBO state (linear or interleaved). Each word appears on successive CLK edges, with pipelined output ensuring first word latency of one cycle.

What is the function of the ZZ pin on the 71V67603S133BGGI?

The ZZ pin on the 71V67603S133BGGI enables full-sleep mode. When driven HIGH asynchronously, it gates the internal clock and reduces supply current to ≤70µA (industrial grade). Data retention is guaranteed. ZZ requires no setup/hold timing relative to CLK and has an internal pull-down, so it may be left unconnected for active-only operation.

Can the 71V67603S133BGGI perform partial-word writes?

Yes, the 71V67603S133BGGI supports partial-word writes via four independent byte-write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit bus. Activation requires BWE = LOW and the corresponding BWx = LOW on the rising CLK edge. This enables 1–4 byte updates without read-modify-write cycles.