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Renesas 71V67603S133BGGI8
- Part No.:
- 71V67603S133BGGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67603S133BGGI8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,624
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Product details
Overview
71V67603S133BGGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global and byte-level write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V67603S133BGGI8 datasheet, 71V67603S133BGGI8 pinout, 71V67603S133BGGI8 application, or 71V67603S133BGGI8 equivalent, key selection criteria include burst mode timing compliance, 36-bit data width matching, TQFP/BGA package compatibility, and industrial-grade power-down behavior under ZZ control.
Technical Context
The 71V67603S133BGGI8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state-no runtime reconfiguration permitted. Pipelined output registers deliver first data one clock cycle after address latch, enabling predictable 133MHz throughput.
Write operations are fully self-timed: GW enables full 36-bit writes, while BWE and BW1–BW4 support selective 9-bit byte writes. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 70mA) and synchronous standby (ISB1 ≤ 70mA), both preserving data integrity without external refresh.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via pin strapping |
| Clock Frequency | 133MHz max; enables 4.2ns clock-to-data access for deterministic read timing |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate rails allow I/O voltage optimization |
| Burst Mode | Linear or interleaved 4-word burst; selected by static LBO pin (no dynamic switching) |
| Power-Down Current | IZZ ≤ 70mA at VDD = 3.465V; guarantees data retention during sleep mode |
| Output Enable Timing | tOE ≤ 4.2ns; ensures fast turn-on of registered outputs for burst-read handshaking |
| Input Capacitance | CIN ≤ 7pF (BGA package); critical for signal integrity at 133MHz system clock rates |
Pinout & Package
Packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), footprint code BGGI8 denotes industrial-temperature, Pb-free, RoHS-compliant variant with 1.0mm ball pitch and 14mm × 14mm body size.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx signals; BW1–BW4 select four 9-bit bytes independently |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal burst counter; ADSP/ADSC load initial address-both synchronous and gated by CE |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| ZZ | Sleep Mode Enable | Asynchronous high-active input; gates internal CLK and reduces current to IZZ ≤ 70mA while retaining memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus (32 data + 4 parity); registered input/output paths synchronized to CLK |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First data word appears one clock cycle after address latch-enables continuous 133MHz burst reads without pipeline stalls |
| Single-Cycle Deselect | Chip deactivation completes within one CLK period; eliminates bus contention during rapid chip-select switching |
| Self-Timed Write Cycle | Internal timing logic eliminates external write-pulse generation; simplifies controller design and improves write reliability |
| Byte-Write Granularity | Four independent 9-bit write enables (BW1–BW4) permit partial-word updates without read-modify-write overhead |
| Industrial Temperature Range | –40°C to +85°C operation validated per JEDEC JESD22-A104; suitable for base station and industrial control environments |
Applications
| High-Speed Network Buffer | Cache Memory Subsystem |
|---|---|
Use Scenario: Line-rate packet buffering in 10G Ethernet switch ASICs where burst reads must sustain 133MHz with zero wait states. IC Role / Device Role / Timing Role: Primary data buffer storing ingress/egress packet headers and metadata; provides pipelined 36-bit reads aligned to system clock. Use Value: 4.2ns tCD and single-cycle deselect enable back-to-back burst transfers at full 133MHz, eliminating inter-packet gaps. | Use Scenario: L2 cache tag RAM in industrial microprocessor modules requiring deterministic access and low-power sleep between bursts. IC Role / Device Role / Timing Role: Tag storage array interfaced to CPU core via synchronous burst bus; uses LBO to match processor's burst ordering preference. Use Value: ZZ sleep mode reduces idle power to ≤70mA while preserving tag state-critical for fanless embedded systems. |
| Real-Time Signal Processing FIFO | Ruggedized Data Acquisition Buffer |
Use Scenario: Streaming ADC sample buffering in radar front-end systems operating at –40°C to +85°C with strict jitter budgets. IC Role / Device Role / Timing Role: High-reliability FIFO staging raw I/Q samples; relies on pipelined outputs to meet real-time DMA deadlines. Use Value: tCLZ = 0ns and tCHZ ≤ 4.2ns ensure glitch-free output enable transitions-prevents metastability in downstream logic. | Use Scenario: Field-deployed environmental sensor concentrators logging multi-channel analog data under thermal cycling stress. IC Role / Device Role / Timing Role: Nonvolatile-configurable buffer holding pre-processed sensor frames before wireless transmission. Use Value: Industrial-grade VDD/VDDQ tolerance (±5%) and verified 70mA sleep current ensure stable operation across wide supply variance and temperature swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BZXI | 256K × 32-bit organization; no parity bits; 133MHz, 4.2ns tCD; 100-pin TQFP only | Lacks I/OP1–I/OP4 parity pins; requires PCB redesign if parity checking is implemented | Select when parity is unnecessary and TQFP packaging is preferred over BGA |
| AS7C3256B-133BIN | 256K × 32-bit; 133MHz; 119-ball BGA but no LBO or ADV support-fixed linear burst only | Cannot emulate interleaved burst mode; lacks ADV pin for burst suspension-limits use in cache coherency protocols | Select for cost-sensitive designs where burst flexibility is not required and 32-bit width suffices |
Compared with CY7C1362BV33-133BZXI and AS7C3256B-133BIN, the 71V67603S133BGGI8 uniquely delivers 36-bit width with parity, programmable burst order (LBO), and ADV-based burst suspension-making it irreplaceable in parity-aware, protocol-flexible high-speed buffering.
Availability
71V67603S133BGGI8 is available at Aetrix Electronics and suitable for high-speed network buffers, industrial cache subsystems, and ruggedized data acquisition systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67603S133BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V67603S133BGGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for deterministic-latency applications in networking infrastructure and real-time embedded systems.
FAQ
What is the maximum supported clock frequency for the 71V67603S133BGGI8?
The 71V67603S133BGGI8 is rated for 133MHz operation with guaranteed 4.2ns clock-to-data access time (tCD) under industrial conditions (–40°C to +85°C, VDD = 3.3V ±5%). It also supports 150MHz (3.8ns) and 166MHz (3.5ns) speeds in commercial temperature range only. The 71V67603S133BGGI8 part number explicitly denotes the 133MHz industrial-grade variant.
Does the 71V67603S133BGGI8 support both linear and interleaved burst modes?
Yes, the 71V67603S133BGGI8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin: LBO = LOW selects linear mode, LBO = HIGH selects interleaved mode. This selection is static-LBO must remain stable during device operation and cannot be changed mid-burst. The 71V67603S133BGGI8 datasheet defines both sequences in Tables 14 and 15.
What is the function of the ZZ pin on the 71V67603S133BGGI8?
The ZZ pin on the 71V67603S133BGGI8 is an asynchronous high-active sleep mode input. When asserted (ZZ > VHD), it gates the internal clock and reduces supply current to ≤70mA (IZZ) while guaranteeing data retention. Recovery time tZZR is 100ns minimum. The 71V67603S133BGGI8 remains in sleep mode until ZZ is deasserted, with no requirement for power sequencing.
How many byte-write enable signals does the 71V67603S133BGGI8 provide?
The 71V67603S133BGGI8 provides four individual byte-write enable inputs: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus (BW1 → I/O0–I/O7 + I/OP1; BW2 → I/O8–I/O15 + I/OP2; etc.). These operate under control of the synchronous BWE signal and enable true partial-word writes without read-modify-write cycles. The 71V67603S133BGGI8 supports simultaneous activation of multiple BWx signals.
What package type is used for the 71V67603S133BGGI8?
The 71V67603S133BGGI8 uses a 119-ball fine-pitch ball grid array (fBGA) package, JEDEC-compliant footprint BGG119. The "I8" suffix indicates industrial temperature grade (–40°C to +85°C), Pb-free construction, and RoHS compliance. Pin assignments match the BG119 mechanical outline shown in Figure 4 of the official datasheet.
71V67603S133BGGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67603S133BGGI8 FAQ
1.How can I place an order for 71V67603S133BGGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S133BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S133BGGI8 reliable?
The price and inventory of 71V67603S133BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133BGGI8 is usually 5 days.
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4.How is shipping managed for 71V67603S133BGGI8?
71V67603S133BGGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67603S133BGGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67603S133BGGI8?
For technical support, including 71V67603S133BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133BGGI8 requirements.
6.How does Aetrix verify that 71V67603S133BGGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67603S133BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133BGGI8 meets industry standards.
7.What is the process for return or replacement of 71V67603S133BGGI8?
All 71V67603S133BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133BGGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S133BGGI8 part is unused and in its original packaging.
Return procedure for 71V67603S133BGGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S133BGGI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24C08C-STUM-T
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