Renesas 71V67603S133BGI

Overview

71V67603S133BGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.

For engineers reviewing the 71V67603S133BGI datasheet, 71V67603S133BGI pinout, 71V67603S133BGI application, or 71V67603S133BGI equivalent, key selection considerations include its 100-pin TQFP package, 3.3V core/I/O supply, synchronous burst timing with ADV/ADSP/ADSC controls, and compatibility with high-throughput packet buffering requiring pipelined read latency and self-timed write cycles.

Technical Context

The 71V67603S133BGI implements a synchronous, clock-driven architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single external address, with sequence order determined by the static LBO pin state (linear vs. interleaved).

It integrates separate write registers per 9-bit byte group (BW1–BW4), a global write register (GW), and asynchronous sleep mode (ZZ) that gates CLK internally while retaining data. Output drivers are pipelined - valid data appears one clock cycle after the initial read command - and support single-cycle deselect for rapid bus turnaround.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated for 256K × 36 configuration (PKG100); pins A0–A18, I/O0–I/O31, I/OP1–I/OP4, and control signals match functional block diagram and pin configuration drawing 5301 drw 02.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 71V67603S133BGI uniquely combines pipelined outputs, ADSC support for cache coherency, and LBO-configurable burst order - making it optimal for high-performance embedded systems where deterministic timing and legacy interface compatibility are essential.

Availability

71V67603S133BGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature performance.

Supply support for 71V67603S133BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V67603S133BGI belongs to IDT's 71V67603/71V67803 family of 3.3V synchronous SRAMs designed specifically for high-speed packet buffering, cache extension, and real-time DSP subsystems demanding pipelined access and burst efficiency.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BGI?

The 71V67603S133BGI is rated for 133MHz operation with a guaranteed clock-to-data (tCD) access time of 4.2ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135V, VDDQ = 3.135V). The device also supports 150MHz (3.8ns) and 166MHz (3.5ns) variants, but the 'S133' suffix confirms this unit is the 133MHz version.

Does the 71V67603S133BGI support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V67603S133BGI is functionally configurable as either 256K × 36 or 512K × 18 depending on address pin usage and system wiring. The 256K × 36 mode uses A0–A17 for row addressing and treats I/O0–I/O31 + I/OP1–I/OP4 as 36-bit data; the 512K × 18 mode repurposes A18 and maps data to 18-bit subsets. Pin configuration diagrams confirm both layouts for the 100-pin TQFP package.

How does the LBO pin affect burst behavior in the 71V67603S133BGI?

The LBO (Linear Burst Order) pin is a static input that selects between two 4-word burst sequences: when LBO = LOW, the device uses linear addressing (A0,A1 → A0,A1+1 → A0+1,A1 → A0+1,A1+1); when LBO = HIGH, it uses interleaved addressing (A0,A1 → A0+1,A1 → A0,A1+1 → A0+1,A1+1). The sequence wraps on completion, and LBO must remain stable during active operation to prevent address misalignment.

What power-saving modes does the 71V67603S133BGI offer, and how is sleep mode activated?

The 71V67603S133BGI provides three low-power states: standby (ISB1 ≤ 70mA), clock-running standby (ISB2 ≤ 170mA), and full sleep mode (IZZ ≤ 70mA). Sleep mode is activated asynchronously by driving the ZZ pin HIGH, which internally gates the CLK path while preserving data retention. Recovery requires tZZR ≥ 100ns after ZZ returns LOW before valid accesses resume.

Can the 71V67603S133BGI perform partial-word writes, and how is byte selection implemented?

Yes, the 71V67603S133BGI supports granular byte writes via four independent 9-bit write enables: BW1 controls I/O0–I/O7 and I/OP1; BW2 controls I/O8–I/O15 and I/OP2; BW3 controls I/O16–I/O23 and I/OP3; BW4 controls I/O24–I/O31 and I/OP4. These are enabled only when BWE is LOW; if BWE is HIGH, only GW can initiate a write. Any active BWx disables all outputs during the write cycle.