Renesas 71V67603S133BGI8

Overview

71V67603S133BGI8 from IDT (Integrated Device Technology) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed cache or buffer memory in network switches and telecom line cards.

For engineers reviewing the 71V67603S133BGI8 datasheet, 71V67603S133BGI8 pinout, 71V67603S133BGI8 application, or 71V67603S133BGI8 equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), VDDQ = 3.3V ±5% I/O supply tolerance, and TQFP-100 package compatibility with JEDEC MO-140 standard.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after address latch and subsequent data on consecutive clock edges.

The device supports two memory configurations (256K × 36 or 512K × 18) via pin-strapping and package variant; the 71V67603S133BGI8 is specifically the 256K × 36 version in 100-pin TQFP. It uses self-timed write cycles controlled by GW, BWE, and BWx signals, and includes asynchronous ZZ sleep mode and OE output enable.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked by corner notch; top-side marking includes "71V67603S133BGI8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-133AXC and AS7C3256B-133JCIN, the 71V67603S133BGI8 uniquely supports both linear and interleaved burst modes via LBO, delivers lower industrial-temp standby current (70mA), and maintains full JEDEC TQFP pin compatibility-making it optimal for mixed-architecture telecom platforms requiring field-upgradable burst behavior.

Availability

71V67603S133BGI8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, telecom line card buffering, and real-time signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67603S133BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) was a fabless semiconductor company specializing in high-performance timing, memory, and interface ICs, acquired by Renesas Electronics in 2019. Its SRAM portfolio emphasized low-latency, burst-capable devices for infrastructure applications.

The 71V67603S133BGI8 belongs to IDT's 71V67603/71V67803 family of 3.3V synchronous SRAMs designed specifically for high-bandwidth, low-latency buffering in networking, telecommunications, and embedded computing systems demanding deterministic timing and industrial reliability.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BGI8?

The 71V67603S133BGI8 is rated for 133MHz operation with a guaranteed clock-to-data access time (tCD) of 4.2ns. This specification holds across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The device also supports 150MHz (3.8ns) and 166MHz (3.5ns) variants, but the 71V67603S133BGI8 is the 133MHz speed grade.

How does the LBO pin affect burst addressing in the 71V67603S133BGI8?

The LBO (Linear Burst Order) pin on the 71V67603S133BGI8 selects between linear and interleaved burst sequences. When LBO = LOW (VSS), the device uses linear addressing (00→01→10→11); when LBO = HIGH (VDD), it uses interleaved order (00→01→11→10). This setting must be static during operation and is sampled at power-up or after ZZ recovery.

What is the function of the ZZ pin on the 71V67603S133BGI8, and what is its recovery time?

The ZZ pin on the 71V67603S133BGI8 enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (industrial grade) while retaining data. Recovery requires tZZR ≥100ns after ZZ returns LOW before the next valid access; the device must be deselected during this interval.

Can the 71V67603S133BGI8 perform partial-word writes, and how is this controlled?

Yes, the 71V67603S133BGI8 supports partial-word writes via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus. These are gated by the synchronous BWE signal; when BWE = LOW and any BWx = LOW, only the corresponding byte is written, and all outputs are disabled during the write cycle.

What package type and pin count does the 71V67603S133BGI8 use, and is it JEDEC-compliant?

The 71V67603S133BGI8 uses a 100-pin thin plastic quad flatpack (TQFP) package conforming to JEDEC MO-140 standard, with 14mm × 20mm body size and 0.5mm lead pitch. It is pin-compatible with other members of the 71V67603/71V67803 family in the same PKG100 variant, enabling drop-in replacement within the same memory configuration.