Renesas 71V67603S133BQ

Overview

71V67603S133BQ from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across commercial temperature range (0°C to +70°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67603S133BQ datasheet, 71V67603S133BQ pinout, 71V67603S133BQ application, or 71V67603S133BQ equivalent, key selection criteria include burst timing compliance, ZZ sleep mode current (≤70mA), VDD/VDDQ supply separation, TQFP-100 package compatibility, and pipelined read latency under ADV/ADSP control.

Technical Context

The 71V67603S133BQ implements a synchronous, clock-driven architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after CLK edge and subsequent data on successive edges.

Burst order is determined by the static LBO pin (LOW = linear, HIGH = interleaved), while ADV enables/disables burst incrementing. Write operations support self-timed execution using GW (global) or BWE + BW1–BW4 (byte-selectable), with OE asynchronous and ZZ enabling full-sleep mode at ≤70µA standby current.

Key Specifications

Pinout & Package

71V67603S133BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm lead pitch. Pinout conforms to PKG100 configuration for 256K × 36 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 71V67603S133BQ uniquely combines configurable burst order (LBO), full-sleep mode (ZZ), and guaranteed 4.2ns tCD - making it optimal for systems requiring both low-power idle states and flexible cache-line alignment.

Availability

71V67603S133BQ is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and radar signal processing applications requiring stable component supply and long-term obsolescence management.

Supply support for 71V67603S133BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V67603S133BQ belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking and signal processing equipment.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BQ?

The 71V67603S133BQ is rated for 133MHz operation with a maximum clock access time of 4.2ns. This specification is guaranteed across the commercial temperature range (0°C to +70°C) and applies to pipelined read cycles under standard load conditions. The device also supports 150MHz (3.8ns) and 166MHz (3.5ns) variants, but the 71V67603S133BQ suffix denotes the 133MHz speed grade. All timing parameters assume proper VDD/VDDQ regulation and controlled impedance PCB routing.

How does the LBO pin affect burst addressing behavior in the 71V67603S133BQ?

The LBO (Linear Burst Order) pin on the 71V67603S133BQ statically configures the internal burst counter sequence: when LBO = LOW, the device uses linear burst order (00→01→10→11); when LBO = HIGH, it uses interleaved order (00→01→11→10). This setting must remain stable during operation and is sampled at power-up or reset. The 71V67603S133BQ's LBO pin is internally pulled to VDD, so leaving it unconnected defaults to interleaved mode - critical for compatibility with PowerPC or certain ARM cache controllers.

What is the function of the ZZ pin, and what power savings does it provide for the 71V67603S133BQ?

The ZZ pin on the 71V67603S133BQ enables full-sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤70µA (industrial) or ≤50µA (commercial). This deep-sleep state retains memory contents and allows immediate wake-up on next CLK edge without initialization delay. The 71V67603S133BQ's ZZ pin is internally pulled to VSS, so leaving it unconnected maintains active operation - ensuring fail-safe behavior in systems without explicit sleep control.

Can the 71V67603S133BQ operate in both 256K × 36 and 512K × 18 configurations, and how is this selected?

Yes, the 71V67603S133BQ supports both 256K × 36 and 512K × 18 organizations via pin strapping. In 256K × 36 mode (default for this part number), A0–A17 serve as address inputs and BW3/BW4 are active. In 512K × 18 mode, A18 becomes an address bit and BW3/BW4 are disabled (per datasheet note). The 71V67603S133BQ's pinout and timing specifications are validated for 256K × 36 operation; using 512K × 18 requires verifying address mapping and byte-enable logic in the host system.

What are the key timing differences between pipelined read and self-timed write operations in the 71V67603S133BQ?

In pipelined read mode, the 71V67603S133BQ delivers first data tCD = 4.2ns after CLK rising edge, with subsequent burst words appearing on each successive CLK edge. In self-timed write mode, the 71V67603S133BQ internally manages write duration based on GW/BWE/BWx sampling at CLK edge - eliminating need for external write pulse generation. This decouples write timing from clock period, allowing reliable writes even with marginal setup/hold margins, unlike conventional asynchronous SRAMs.