Renesas 71V67603S133BQ8

Overview

71V67603S133BQ8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S133BQ8 datasheet, 71V67603S133BQ8 pinout, 71V67603S133BQ8 application, or 71V67603S133BQ8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDD/VDDQ supply separation, and TQFP-100 package compatibility with legacy board layouts.

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per ADV assertion, with output pipelining delivering first data one cycle after clock edge and subsequent data on successive edges.

The device supports dual write control schemes: global write (GW) enables full 36-bit writes, while byte write enable (BWE) combined with BW1–BW4 selects individual 9-bit bytes. Asynchronous OE and ZZ inputs provide output enable and deep-sleep control independent of clock timing.

Key Specifications

Pinout & Package

71V67603S133BQ8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm lead pitch. Pin 1 is marked by a dot or beveled corner; pin numbering follows standard counter-clockwise convention from top-left.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-133BZXI and AS7C331024B-133BIN, the 71V67603S133BQ8 offers unique LBO-configurable burst ordering and TQFP-100 compatibility for legacy upgrades, while lacking JTAG but providing lower ZZ sleep current than the Cypress part.

Availability

71V67603S133BQ8 is available at Aetrix Electronics and suitable for high-speed networking equipment, industrial automation controllers, medical imaging subsystems, and avionics data recorders requiring stable component supply and long-term obsolescence management.

Supply support for 71V67603S133BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory, and interface solutions for high-performance computing and communications infrastructure.

The 71V67603S133BQ8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for cache and buffer applications in systems demanding deterministic timing, low-latency burst access, and robust industrial temperature operation.

FAQ

What is the maximum operating frequency of the 71V67603S133BQ8?

The 71V67603S133BQ8 is rated for 133MHz operation, corresponding to a minimum clock cycle time (tCYC) of 7.5ns. This frequency is guaranteed across the commercial temperature range (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. The device also supports 150MHz and 166MHz variants (71V67603S150BQ8 and 71V67603S166BQ8), but the 71V67603S133BQ8 is specifically characterized and binned for 133MHz performance.

Does the 71V67603S133BQ8 support both linear and interleaved burst modes?

Yes, the 71V67603S133BQ8 supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing; when LBO is driven HIGH, it executes interleaved burst addressing. The LBO pin is asynchronous and must remain static during active operation - changing its state mid-burst may cause undefined address sequencing.

What is the function of the ZZ pin on the 71V67603S133BQ8?

The ZZ pin on the 71V67603S133BQ8 is an asynchronous high-active sleep mode input. When ZZ is driven HIGH, the internal clock is gated and the device enters full sleep mode, reducing supply current to ≤70mA (industrial grade) while retaining data. The device must be deselected (CE, CS0, CS1 inactive) before asserting ZZ, and requires tZZR ≥100ns recovery time before resuming normal operation.

How many data bits does the 71V67603S133BQ8 provide, and what is the role of I/OP1–I/OP4?

The 71V67603S133BQ8 provides 36 data bits: I/O0–I/O31 (32 bits) plus I/OP1–I/OP4 (4 parity bits). These parity bits support error detection in safety-critical applications such as industrial control and avionics. The device does not perform parity generation or checking internally - external logic must manage parity encoding/decoding.

Can the 71V67603S133BQ8 operate with a single 3.3V supply, or are separate VDD and VDDQ supplies required?

The 71V67603S133BQ8 requires two independent 3.3V supplies: VDD for the core logic and VDDQ for the I/O drivers. Although both are nominally 3.3V ±5%, they must be separately decoupled and routed to minimize noise coupling from I/O switching into the sensitive memory array. Using a single shared supply violates the DC operating conditions and risks timing violations or data corruption.