Renesas 71V67603S133BQG

Overview

71V67603S133BQG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write control, and targets high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V67603S133BQG datasheet, 71V67603S133BQG pinout, 71V67603S133BQG application, or 71V67603S133BQG equivalent, key selection criteria include burst timing compliance, 3.3V I/O compatibility, TQFP-100 package footprint, sleep mode (ZZ) power-down behavior, and linear vs. interleaved address sequencing for cache coherency.

Technical Context

The 71V67603S133BQG implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-generates four consecutive addresses per initial access, enabling cache-line fills without external address generation.

Write operations are self-timed and support multiple granularity: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4). Pipelined output registers deliver first data on the clock edge following address latching, while single-cycle deselect ensures rapid bus release after read termination.

Key Specifications

Pinout & Package

71V67603S133BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm pitch leads. Pin 1 is marked by a dot or notch; orientation follows standard top-view labeling with A0–A18 address inputs, I/O0–I/O31 + I/OP1–I/OP4 data lines, and dedicated control signals including ADV, ADSP, ADSC, GW, BWE, BW1–BW4, LBO, and ZZ.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256A-133JCIN, the 71V67603S133BQG uniquely combines LBO-configurable burst addressing, true pipelined outputs (tCD ≤ tOE), and granular byte-write control-enabling tighter timing closure in cache and packet-processing subsystems.

Availability

71V67603S133BQG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card design, and high-speed cache memory applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across commercial temperature range (0°C to +70°C).

Supply support for 71V67603S133BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance analog, mixed-signal, and memory solutions for communications, computing, and industrial markets.

The 71V67603S133BQG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking ASICs, telecom infrastructure, and real-time DSP interfaces.

FAQ

What is the maximum operating frequency of the 71V67603S133BQG?

The 71V67603S133BQG is rated for 133MHz operation, corresponding to a 7.5ns clock cycle time and 4.2ns clock-to-data (tCD) access time. This frequency is guaranteed across the commercial temperature range (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. Higher frequencies (150MHz/166MHz) apply only to other speed grades-not this specific S133 suffix part.

Does the 71V67603S133BQG support both linear and interleaved burst modes?

Yes, the 71V67603S133BQG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation to avoid undefined burst behavior.

What is the function of the ZZ pin on the 71V67603S133BQG?

The ZZ pin on the 71V67603S133BQG is an asynchronous sleep mode input. When asserted HIGH, it gates the internal clock and reduces supply current to 50µA (commercial grade), while retaining full data retention. Recovery time (tZZR) is 100ns, and the device must be deselected before entering sleep mode per AC specifications.

How many byte-write enable signals does the 71V67603S133BQG provide?

The 71V67603S133BQG provides four individual byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus (BW1 → I/O0–7 + I/OP1, BW2 → I/O8–15 + I/OP2, etc.). These operate synchronously with CLK and require BWE = LOW to be active, enabling precise partial-word writes without disturbing adjacent bytes.

Is the 71V67603S133BQG pin-compatible with the 71V67803 series?

No, the 71V67603S133BQG is not fully pin-compatible with the 71V67803 series. While both share the same 100-pin TQFP package and core signal set, the 71V67803 omits BW3 and BW4 pins (replacing them with NC), and its address mapping differs for the 512K × 18 configuration. The 71V67603S133BQG is specifically optimized for 256K × 36 operation and retains all four byte-write enables.