Renesas 71V67603S133BQG8

Overview

71V67603S133BQG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C). Used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S133BQG8 datasheet, 71V67603S133BQG8 pinout, 71V67603S133BQG8 application, or 71V67603S133BQG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDDQ=3.3V±5% I/O supply tolerance, and TQFP-100 package compatibility with JEDEC MO-145 footprint.

Technical Context

This SRAM implements a synchronous interface with pipelined read outputs-data appears one clock cycle after address latching-and supports four-word burst sequences initiated by ADV low. The internal address counter advances based on LBO state (linear vs. interleaved), and all control inputs (CE, CS0/CS1, ADSP/ADSC, GW, BWE, BWx) are sampled synchronously on CLK rising edge.

Write operations are self-timed: GW enables full 36-bit writes, while BWE and BW1–BW4 allow selective 9-bit byte writes. Asynchronous OE controls output drivers, and ZZ enables full-sleep mode with ≤70mA supply current. Power-down sequencing requires device deselection before entering sleep.

Key Specifications

Pinout & Package

71V67603S133BQG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), compliant with MO-145 outline. Pin 1 is marked by a dot; pin numbering follows counterclockwise convention from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33128PFSI-133BIN, the 71V67603S133BQG8 offers unique LBO-configurable burst sequencing and lower sleep current (IZZ ≤70mA), making it optimal for power-sensitive, cache-coherent systems where burst address predictability is critical.

Availability

71V67603S133BQG8 is available at Aetrix Electronics and suitable for network packet buffering, CPU cache subsystems, telecom jitter buffers, and radar signal processing requiring stable component supply across commercial temperature range.

Supply support for 71V67603S133BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and RF solutions for communications and computing infrastructure.

The 71V67603 series targets high-speed data-path applications demanding deterministic latency, burst efficiency, and low-power sleep-designed specifically for networking ASIC interfaces and embedded cache subsystems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BQG8?

The 71V67603S133BQG8 is rated for 133MHz operation with a guaranteed clock access time (tCD) of 4.2ns under commercial conditions (0°C to +70°C, VDD/VDDQ = 3.3V ±5%). This specification is validated across all 256K × 36 configurations and applies to pipelined read cycles with OE asserted.

How does the LBO pin affect burst addressing behavior in the 71V67603S133BQG8?

The LBO pin selects between linear and interleaved burst sequences: when LBO = LOW, the internal counter increments A0/A1 in binary order (00→01→10→11); when LBO = HIGH, it follows an interleaved pattern (00→01→11→10). This setting must remain static during operation and is sampled asynchronously at power-up or configuration time (tCFG = 30ns).

Can the 71V67603S133BQG8 operate with separate VDD and VDDQ supplies?

Yes-the 71V67603S133BQG8 requires independent 3.3V ±5% supplies: VDD powers the core logic and address/control circuitry, while VDDQ powers the I/O drivers and data registers. Both rails must be ramped monotonically; no sequencing is mandated, but I/O pins must not exceed VDDQ during power-up.

What is the function of the ZZ pin, and what is its recovery time after sleep mode?

The ZZ pin places the 71V67603S133BQG8 into full sleep mode when driven HIGH, reducing supply current to ≤70mA while retaining data. After ZZ returns LOW, a minimum tZZR of 100ns is required before the first valid access; during this period, CLK may be running but outputs remain high-Z and internal logic resets.

Does the 71V67603S133BQG8 support byte-write operations, and how are they enabled?

Yes-the 71V67603S133BQG8 supports four independent 9-bit byte writes via BW1–BW4. Byte writes require BWE = LOW at the rising CLK edge; each BWx enables its respective byte group (e.g., BW1 → I/O0–7/I/OP1). Global write (GW = LOW) overrides all byte enables and writes all 36 bits simultaneously.