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Renesas 71V67603S133BQGI
- Part No.:
- 71V67603S133BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67603S133BQGI.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V67603S133BQGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C) in a 100-pin TQFP package. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V67603S133BQGI datasheet, 71V67603S133BQGI pinout, 71V67603S133BQGI application, or 71V67603S133BQGI equivalent, key selection criteria include burst timing compliance, ZZ-controlled sleep mode current (≤70mA), 3.3V I/O supply (VDDQ) tolerance, and TQFP-100 pin compatibility with legacy IDT SRAM footprints.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-generates four sequential addresses per initial address, enabling efficient processor/cache interface with pipelined output staging.
The device integrates separate core (VDD) and I/O (VDDQ) power domains, supports self-timed writes using GW/BWE/BWx logic, and provides asynchronous sleep entry via ZZ input. Deselect is completed in one clock cycle, minimizing bus turnaround latency in multi-chip memory systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit mode via pin strapping |
| Max Clock Frequency | 133MHz - guarantees ≤4.2ns clock access time for timing-critical burst reads |
| Supply Voltages | VDD = 3.3V ±5% (core); VDDQ = 3.3V ±5% (I/O) - enables direct interfacing with 3.3V logic without level shifters |
| Power Consumption | IZZ ≤ 70mA in full sleep mode (ZZ HIGH) - reduces system standby power in always-on telecom infrastructure |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence - matches x86 or PowerPC cache line ordering requirements |
| Write Flexibility | Global (GW), byte-enable (BWE), and individual byte (BW1–BW4) write controls - allows precise 9-bit sub-word updates without read-modify-write |
| Operating Temperature | −40°C to +85°C (industrial grade) - qualified for deployment in outdoor base stations and industrial controllers |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated per IDT document 5310 drw 02 (256K × 36 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC - supports 19-bit addressing for 256K × 36 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) aligned to rising edge |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte-level writes; BW1–BW4 select individual 9-bit bytes - enables granular memory updates |
| ADV / ADSP / ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register - decouples address capture from clock domain |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst - configures address sequence without clock dependency |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode, gating internal clock and reducing current to ≤70mA - enables rapid low-power state entry |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; I/OP1–I/OP4 are parity bits - supports ECC-capable systems |
| OE | Output Enable | Asynchronous control of output drivers - allows fast tri-state assertion independent of clock for bus sharing |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data available one clock cycle after address latch; subsequent burst words appear on consecutive rising edges - eliminates wait states in high-throughput pipelines |
| Single-Cycle Deselect | Chip deactivation completes within one CLK period - minimizes bus contention overhead when switching between multiple SRAMs |
| Self-Timed Write Cycle | Internal timing logic resolves write completion without external delay insertion - simplifies PCB layout and timing closure |
| 3.3V Core + I/O Supplies | Dual VDD/VDDQ rails allow independent noise management and reduce simultaneous switching noise on memory bus |
| Industrial Temperature Range | Guaranteed operation from −40°C to +85°C - meets EN 50155 and Telcordia GR-63-CORE requirements for harsh environments |
Applications
| Telecom Line Card Buffering | Network Processor Cache |
|---|---|
Use Scenario: High-bandwidth packet buffering in 10Gbps Ethernet line cards where deterministic latency is critical. IC Role / Device Role / Timing Role: Serves as primary packet descriptor cache with burst-aligned 36-bit data transfers synchronized to network processor clock. Use Value: 133MHz operation and pipelined outputs deliver sustained 4.2ns access, enabling zero-wait-state descriptor fetches at line rate. |
Use Scenario: Instruction/data cache for multi-core network processors requiring low-latency, high-bandwidth memory access. IC Role / Device Role / Timing Role: Acts as L2 cache SRAM with linear burst mode matching processor cache line stride and single-cycle deselect for rapid context switching. Use Value: LBO-configurable burst order ensures alignment with processor's cache line mapping, eliminating address translation overhead. |
| Baseband Digital Signal Processing | Industrial PLC Data Logging |
Use Scenario: Real-time FFT and channel estimation buffers in 4G/5G baseband units operating in outdoor cabinets. IC Role / Device Role / Timing Role: Provides scratchpad memory for DSP cores, leveraging ZZ sleep mode during idle frames to cut system power. Use Value: Industrial temperature rating (−40°C to +85°C) and ≤70mA sleep current ensure reliable operation in uncooled enclosures. |
Use Scenario: High-reliability data logging buffer in programmable logic controllers deployed in factory automation systems. IC Role / Device Role / Timing Role: Stores sensor acquisition history with byte-write capability (BW1–BW4) to update individual channel records without full-page erase. Use Value: Individual 9-bit byte write enables atomic updates of 8-channel analog input records, preventing data corruption during power interruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BZXI | 256K × 32-bit (no parity bits); uses different burst control (BWS0/BWS1 vs. ADV/LBO) | Lacks I/OP1–I/OP4 parity pins; requires redesign of parity-handling logic and burst address sequencing | Select if parity is not required and Cypress-compatible timing margins are acceptable |
| AS7C33256P-133BIN | 256K × 32-bit; no LBO/ADV support; asynchronous OE only; no ZZ sleep mode | No burst mode or low-power sleep - limited to simple buffer applications without cache-line efficiency or power gating | Select only for cost-sensitive, non-burst, non-sleep use cases where 4-bit width reduction is acceptable |
Compared with CY7C1362BV33-133BZXI and AS7C33256P-133BIN, the 71V67603S133BQGI uniquely delivers 36-bit width with parity, LBO-selectable burst order, and ZZ-gated sleep - making it irreplaceable in telecom cache and industrial logging designs requiring both data integrity and dynamic power control.
Availability
71V67603S133BQGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial control, and networking equipment requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature performance.
Supply support for 71V67603S133BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.
The 71V67603S133BQGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in telecom base stations, network processors, and industrial real-time controllers.
FAQ
What is the maximum supported clock frequency for the 71V67603S133BQGI?
The 71V67603S133BQGI is rated for 133MHz operation with a guaranteed 4.2ns clock access time under industrial conditions (−40°C to +85°C, VDD/VDDQ = 3.3V ±5%). This frequency is fixed per the "S133" suffix and validated in AC Electrical Characteristics Table 16 of the datasheet. Higher speeds (e.g., 150MHz or 166MHz) apply only to other variants (71V67603S150/166) and are not supported by this specific part number.
Does the 71V67603S133BQGI support both linear and interleaved burst modes?
Yes, the 71V67603S133BQGI supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear burst; LBO = HIGH selects interleaved burst. This is confirmed in Pin Definitions Table 2 and Burst Sequence Tables 14–15. The LBO input is asynchronous and static - it must remain stable during device operation and is sampled at power-up or configuration time (tCFG = 30ns minimum).
What is the function of the ZZ pin on the 71V67603S133BQGI?
The ZZ pin on the 71V67603S133BQGI is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and places the device in full sleep mode, reducing supply current to ≤70mA (ISB1/IZZ spec). Data retention is guaranteed during sleep. ZZ is internally pulled to VSS if left unconnected, so active-HIGH assertion requires explicit driving - a detail confirmed in Note 1 of AC Test Conditions (Table 10).
How many data bits does the 71V67603S133BQGI provide, and are parity bits included?
The 71V67603S133BQGI provides 36 data bits total: 32 main data bits (I/O0–I/O31) plus 4 parity bits (I/OP1–I/OP4). This 256K × 36 organization is explicitly stated in the Features section and Functional Block Diagram. Parity support is retained in both 256K × 36 and 512K × 18 configurations, enabling ECC-capable memory subsystems without external parity logic.
Which package type is used by the 71V67603S133BQGI?
The 71V67603S133BQGI uses a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body size, 0.5mm lead pitch. This is confirmed in the Features section ("Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack") and Pin Configuration Drawing 02. The "BQGI" suffix denotes the TQFP package with industrial temperature grade and lead-free finish.
71V67603S133BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67603S133BQGI FAQ
1.How can I place an order for 71V67603S133BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S133BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S133BQGI reliable?
The price and inventory of 71V67603S133BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133BQGI is usually 5 days.
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Once your 71V67603S133BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67603S133BQGI?
For technical support, including 71V67603S133BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133BQGI requirements.
6.How does Aetrix verify that 71V67603S133BQGI is sourced from the original manufacturer or authorized distributors?
All 71V67603S133BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133BQGI meets industry standards.
7.What is the process for return or replacement of 71V67603S133BQGI?
All 71V67603S133BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S133BQGI part is unused and in its original packaging.
Return procedure for 71V67603S133BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S133BQGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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