Renesas 71V67603S133BQGI8

Overview

71V67603S133BQGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67603S133BQGI8 datasheet, 71V67603S133BQGI8 pinout, 71V67603S133BQGI8 application, or 71V67603S133BQGI8 equivalent, key selection criteria include burst timing compliance, ZZ sleep mode current (≤70mA), VDD/VDDQ supply separation, TQFP-100 package footprint, and compatibility with 3.3V I/O systems requiring pipelined read cycles and self-timed writes.

Technical Context

The 71V67603S133BQGI8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single external address, with sequence order determined by the static LBO pin state (linear vs. interleaved).

Burst reads deliver pipelined output data - the first word appears one clock cycle after the initial address, followed by three more words on successive rising edges. Write operations support both global (GW) and individual byte (BW1–BW4) enable, with BWE gating byte write signals and CE/CS0/CS1 jointly enabling chip select.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked via corner cut; thermal pad not present. Compatible with standard reflow profiles for lead-free assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 71V67603S133BQGI8 uniquely supports dual-address-status inputs (ADSP/ADSC) and programmable burst order (LBO), making it the only option compatible with legacy RISC CPU cache controllers and telecom standards like ITU-T G.709 framing buffers.

Availability

71V67603S133BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, baseband processing memory, and industrial motion controller buffer applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature performance.

Supply support for 71V67603S133BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67603S133BQGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in telecom infrastructure, networking equipment, and real-time control systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BQGI8?

The 71V67603S133BQGI8 is rated for 133MHz operation with a guaranteed clock-to-data access time (tCD) of 4.2ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and under worst-case VDD/VDDQ conditions (3.135V to 3.465V). The part also supports 150MHz (3.8ns) and 166MHz (3.5ns) variants, but the 71V67603S133BQGI8 suffix denotes the 133MHz grade.

Does the 71V67603S133BQGI8 support both linear and interleaved burst modes, and how is this selected?

Yes, the 71V67603S133BQGI8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). LBO is an asynchronous static input and must remain stable during active burst operation - changing it mid-burst may cause undefined address sequencing.

How does the 71V67603S133BQGI8 handle power-down and sleep modes?

The 71V67603S133BQGI8 implements two low-power states: CMOS standby (ISB1 ≤70mA) when deselected, and full sleep mode (IZZ ≤70mA) when ZZ is driven HIGH. In sleep mode, the internal clock is gated, core logic is halted, and data retention is guaranteed. Recovery time (tZZR) is 100ns, and no power supply sequencing is required - VDD and VDDQ may ramp simultaneously.

What are the key differences between the GW, BWE, and BW1–BW4 control signals on the 71V67603S133BQGI8?

GW (Global Write Enable) initiates a full 36-bit write when LOW, overriding all byte enables. BWE (Byte Write Enable) acts as a gate: only when BWE is LOW are the BW1–BW4 signals recognized. BW1–BW4 individually control four 9-bit bytes (BW1→I/O0–7+I/OP1, BW2→I/O8–15+I/OP2, etc.). This hierarchy allows flexible partial writes without external byte-mask logic - a critical feature for cache coherency and ECC update operations.

Is the 71V67603S133BQGI8 pin-compatible with other members of the IDT71V67603/71V67803 family?

The 71V67603S133BQGI8 is pin-compatible with the 71V67803 in 100-pin TQFP (PKG100) packaging for the 512K×18 configuration, but functional pin mapping differs: BW3/BW4 are unused on the 71V67803, and address pins A15–A18 are reassigned. For direct replacement, verify memory map alignment, burst mode requirements, and byte-enable usage - the 71V67603S133BQGI8 is not a drop-in substitute for 71V67803 without layout or firmware review.